• 제목/요약/키워드: Si tip

검색결과 198건 처리시간 0.034초

A study on the Nano adhesion and Friction at Different Contact Conditions using SPM (SPM을 이용한 접촉조건 변화에 따른 미소응착 및 마찰특성에 관한 연구)

  • 윤의성;박지현;양승호;공호성
    • Tribology and Lubricants
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    • 제17권3호
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    • pp.191-197
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    • 2001
  • Nano adhesion and friction characteristics between SPM(scanning electron microscope) tips and flat plates of different materials were experimentally studied. Tests were performed to measure adhesion and friction in AFM(atomic force microscope) and LFM(lateral force microscope) modes in different conditions of relative humidity. Three different Si$_3$N$_4$ tips (rdaii : 15nm, 22nm and 50 nm) and three different flat plates of Si-wafer(100), W-DLC(tungsten-incorporated diamond-like carbon) and DLC were used. Results generally showed that adhesion and friction increased with the tip radius, and W-DLC and DLC surfaces were superior to Si-wafer. But the adhesion force of Si-wafer showed non linearity with the tip radius while W-DLC and DLC surfaces showed good correlation to the “JKR model”. It was found that high adhesion force between Si-wafer and a large radius of tip was caused by a capillary action due to the condensed water.

Decrease of Gate Leakage Current by Employing AI Sacrificial Layer in the DLC-coated Si-tip FEA Fabrication (DLC-coated Si-tip FEA 제조에 있어서 Al 희생층을 이용한 게이트 누설 전류의 감소)

  • Ju, Byeong-Kwon;Lee, Sangjo;Kim, Hoon;Lee, Yun-Hi;Oh, Myung-Hwan
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • 제48권8호
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    • pp.577-579
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    • 1999
  • DLC film remaining on device surface could be removed by eliminating AI sacrificial layer as a final step of lift-off process in the fabrication of DLC-coated Si-tip FEA. The field emission properties(I-V curves, hysteresis, and current fluctuation etc.) of the processed device were analyzed and the process was employed to 1.76 inch-sized FEA panel fabrication in order to evaluate its FED applicability.

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Wear Characteristics of Atomic force Microscope Tip (Atomic Force Microscope Tip 의 마멸특성에 관한 연구)

  • 정구현;김대은
    • Journal of the Korean Society for Precision Engineering
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    • 제20권5호
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    • pp.189-195
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    • 2003
  • Atomic Force Microscope (AFM) has been widely used in micro/nano-scale studies and applications for. the last few decade. In this work, wear characteristics of silicon-based AFM tip was investigated. AFM tip shape was observed using a high resolution SEM and the wear coefficient was approximately calculated based on Archard's wear equation. It was shown that the wear coefficient of silicon and silicon nitride were in the range of ${10}^{-1}$~${10}^{-3}$ and ${10}^{-3}$~${10}^{-4}$, respectively. Also, the effect of relative humidity and sliding distance on adhesion-induced tip wear was discussed. It was found that the tip wear has more severe for harder test materials. Finally, the probable wear mechanism was analyzed from the adhesive and abrasive interaction point of view.

Formation of Mo-Silicide on Mo Tip

  • Oh, Chang-Woo;Kim, Yoo-Jong;Lee, Jong-Duk;Park, Byung-Gook
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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    • pp.217-218
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    • 2000
  • This paper describes a formation of the Mo-silicide on Mo tip to compare the emission characteristics of the Mo tip. Cone-shaped Mo tip arrays were fabricated and silicidized by evaporating a 15nm-thick a-Si film on Mo tip arrays and annealing it in inert ambient at the temperature of $1000\;^{\circ}C$ for 60 sec. The $Mo_5Si_3$ phase of Mo-silicide was observed through X-ray diffraction (XRD) analysis. Although the gate voltage of the Mo-silicide tip increased by 38 V to obtain the current level of 20 nA/tip, the dependence of emission current on vacuum level was improved.

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Development of Multi-DOF Nano Aligner System for CNT-Tip (탄소 나노 튜브-팁 제작을 위한 다자유도 나노 정렬 시스템 개발)

  • Kang, Gyung-Soo;Lee, Jun-Sok;Choi, Jai-Seong;Kwak, Yoon-Keun;Kim, Soo-Hyun
    • Proceedings of the KSME Conference
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    • 대한기계학회 2004년도 춘계학술대회
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    • pp.923-928
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    • 2004
  • AFM tip has been used for surface profiling with a fine resolution, but there is a barrier to improve its performance because of the low aspect ratio. Many researchers have solved this problem with attaching carbon nanotube (CNT) to Si-tip. In this paper, we proposed the aligner system that composed of dual type stage system, and these stages could attach a carbon nanotube to tungsten-tip in vacuum condition. We used tungsten tip instead of Si-tip because of its conductivity. The aligner system proposed in this paper has 10 degree-of-freedom that 3 in the first stage and 7 in the second stage. With picomotors and piezotube, the first stage has the resolution about several tens of nm and the second stage has a resolution about a nm. We experimented on characterization of Nano Aligner System and operated picomotors in SEM environment.

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Chelidonium majus Induces Apoptosis of Human Ovarian Cancer Cells via ATF3-Mediated Regulation of Foxo3a by Tip60

  • Shen, Lei;Lee, Soon;Joo, Jong Cheon;Hong, Eunmi;Cui, Zhen Yang;Jo, Eunbi;Park, Soo Jung;Jang, Hyun-Jin
    • Journal of Microbiology and Biotechnology
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    • 제32권4호
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    • pp.493-503
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    • 2022
  • Forkhead transcription factor 3a (Foxo3a) is believed to be a tumor suppressor as its inactivation leads to cell transformation and tumor development. However, further investigation is required regarding the involvement of the activating transcription factor 3 (ATF3)-mediated Tat-interactive protein 60 (Tip60)/Foxo3a pathway in cancer cell apoptosis. This study demonstrated that Chelidonium majus upregulated the expression of ATF3 and Tip60 and promoted Foxo3a nuclear translocation, ultimately increasing the level of Bcl-2-associated X protein (Bax) protein. ATF3 overexpression stimulated Tip60 expression, while ATF3 inhibition by siRNA repressed Tip60 expression. Furthermore, siRNA-mediated Tip60 inhibition significantly promoted Foxo3a phosphorylation, leading to blockade of Foxo3a translocation into the nucleus. Thus, we were able to deduce that ATF3 mediates the regulation of Foxo3a by Tip60. Moreover, siRNA-mediated Foxo3a inhibition suppressed the expression of Bax and subsequent apoptosis. Taken together, our data demonstrate that Chelidonium majus induces SKOV-3 cell death by increasing ATF3 levels and its downstream proteins Tip60 and Foxo3a. This suggests a potential therapeutic role of Chelidonium majus against ovarian cancer.

Fabrication and Characterization of Si-tip Field Emitter Array (실리콘 팁 전계 방출 소자의 제조 및 동작 특성 평가)

  • 주병권;이상조;박재석;이윤희;전동렬;오명환
    • Journal of the Microelectronics and Packaging Society
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    • 제6권1호
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    • pp.65-73
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    • 1999
  • Si-tip FEAs were fabricated by a lift-off based process and their operating properties were evaluated. The dependence of emission current on applied gate and anode voltages, maximum emission current, hysteresis phenomena, MOSFET-type curves, current fluctuation, light emission from the emitted electrons, and failure mechanism of the device were widely discussed based on the experimental results.

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Fabrication & Properties of Field Emitter Arrays using the Mold Method for FED Application (Mold 법에 의해 제작된 FED용 전계에미터어레이의 특성 분석)

  • ;;;;K. Oura
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.347-350
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    • 2001
  • A typical Mold method is to form a gate electrode, a gate oxide, and emitter tip after fabrication of mold shape using wet-etching of Si substrate. In this study, however, new Mold method using a side wall space structure is used in order to make sharper emitter tip with a gate electrode. Using LPCVD(low pressure chemical vapor deposition), a gate oxide and electrode layer are formed on a Si substrate, and then BPSG(Boro phospher silicate glass) thin film is deposited. After, the BPSG thin film is flowed into a mold as high temperature in order to form a sharp mold structure. Next TiN thin film is deposited as a emitter tip substance. The unfinished device with a glass substrate is bonded by anodic bonding techniques to transfer the emitters to a glass substrate, and Si substrate is etched using KOH-deionized water solution. Finally, we made sharp field emitter array with gate electrode on the glass substrate.

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AFM fabrication of oxide patterns on 4H-SiC surface (4H-SiC 표면에서 AFM의 산화 패턴 제작)

  • Jo, Yeong-Deuk;Bahng, Wook;Kim, Sang-Cheol;Kim, Nam-Kyun;Koo, Sang-Mo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.64-64
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    • 2009
  • Atomic force microscopy (AFM) fabrication of oxide patterns is an attractive technique for nanoscale patterns and related device structures, SiC exhibits good performance in high-power, high-frequency, and high-temperature conditions that is comparable to the performance of Si. The AFM fabrication of oxide patterns on SiC is important for electronic applications. However, there has not been much reported investigations on oxidation of SiC using AFM. We achieved the local oxidation of 4H-SiC using the high loading force of ~100 nN, although the oxidation of SiC is generally difficult mainly due to the physical hardness and chemical inactivity. All the experiments were performed using atomic force microscopy (S.I.S. GmbH, Germany) with a Pt/Ir-coated Si tip at ~40% humidity and room temperature. The spring constant and resonance frequency of the tip were around ~3 N/m and ~70 kHz. We fabricated oxide patterns on n-type 4H-SiC ($\sim10^{19}/cm^3$) and n-type Si ($\sim1.9\times10^{16}/cm^3$). In summary, we demonstrated that the oxide patterns can be obtained over the electric field of ${\sim}\times10^7 V/cm$ and the high loading force using the tip as a cathode. The electric field transports the oxyanions (OH-) to the positively biased surface.

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The Effects of Surface Energy and Roughness on Adhesion Force (표면에너지와 거칠기가 응착력에 미치는 영향)

  • Rha, Jong-Joo;Kwon, Sik-Cheol;Jeong, Yong-Soo
    • Transactions of the Korean Society of Mechanical Engineers A
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    • 제30권11호
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    • pp.1335-1347
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    • 2006
  • Surface energies calculated from measured contact angles between several solutions and test samples, such as Si wafer, $Al_2O_3$, $SiO_2$, PTFE(Polytertrafluoroethylene), and DLC(Diamond Like Carbon) films, based on geometric mean method and Lewis acid base method. In order to relate roughness to adhesion force, surface roughness of test samples were scanned large area and small by AFM(Atomic Force Microscopy). Roughness was representative of test samples in large scan area and comparable with AFM tip radius in small scan area. Adhesion forces between AFM tip and test samples were matched well with order of roughness rather then surface energy. When AFM tips having different radius were used to measure adhesion force on DLCI film, sharper AFM tip was, smaller adhesion force was measured. Therefore contact area was more important factor to determine adhesion force.