• Journal of Advanced Navigation Technology
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• v.12 no.6
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• pp.653-658
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• 2008

The automotive environment is particularly demanding on connector performance, and is characterized by large temperature changes, high humidity and corrosive atmospheres. Fretting is a contact damage process that occurs between two contact surfaces. Fretting corrosion refers to corrosion damage at the asperities of contact surfaces. This damage is induced under load and in the presence of repeated relative surface motion, as induced for example by vibration. This paper critically reviews the works published previously on fretting corrosion of electrical connectors. Various experimental approaches such as testing machines, material selection, testing environments, acceleration testing techniques and preventing methods are addressed. Future research prospects arc suggested.

• Korean Journal of Materials Research
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• v.13 no.10
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• pp.640-644
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• 2003

NiCr thin films were fabricated by rf magnetron sputtering for applying to both the top electrode and absorption layer on Pb(Zr, Ti)O$_3$(PZT) thin films for infrared sensors. The rms roughness and resistivity of NiCr films prepared with Ni power of 80 W and Cr power of 50 W showed the most stable oxidation resistance after annealing at $600^{\circ}C$ for 5 min in oxygen ambient. The rms roughness and resistivity of NiCr films annealed at $V^{\circ}C$ in oxygen ambient were about 2$0\AA$ and $70 \mu$Ω-cm, respectively. As-deposited Ni/PZT/Pt and NiCr (Ni 80 W, Cr 50 W)/PZT/Pt structures showed well saturated hysteresis loops. However, in case of the samples annealed at $500^{\circ}C$ in oxygen ambient, only NiCr/PZT/Pt showed saturated loops having a remanent polarization of 20$\mu$C/$\textrm{cm}^2$. Ultra-thin NiCr films showed a possibility as a top electrode for infrared sensors.

• Journal of Sensor Science and Technology
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• v.18 no.4
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• pp.301-306
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• 2009

This paper describes the design and fabrication of 16$\times$16 microbolometer infrared focal plane arrays based on iMEMS technology. Amorphous silicon was used for infrared-sensitive material, and it showed the resistance of 18 Mohm and the temperature coefficient of resistivity of -2.4 %. The fabricated sensors exhibited responsivity of 78 kV/W and thermal time constant of 8.0 msec at a bias voltage of 0.5 V. The array performances had satisfactory uniformity less than 5 % within one-sigma. Also, 1/f noise of pixel was measured and the noise factor of $6\times10^{-11}$ was extracted. Finally, we obtained detectivity of $1.27\times10^9cmHz^{0.5}/W$ and noise equivalent temperature difference of 200 mK at a frame rate of 30 Hz.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.65-65
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• 2011

We report the application of conducting metal oxide electrodes for semiconducting metal oxide gas sensors. Pt interdigitated electrodes have been commonly used for metal oxide gas sensor because of the low resistivity, excellent thermal and chemical stability of Pt. However, the high cost of Pt is an obstacle for the wide use of metal oxide gas sensors compared with its counterpart electrochemical gas sensors. Meanwhile, relatively low-cost conducting metal oxides are widely being used for light-emitting diodes, flat panel displays, solar cell and etc. In this work, we have fabricated $WO_3$ and $SnO_2$ thin film gas sensors using interdigitated electrodes of conducting metal oxides. Thin film gas sensors based on conducting metal oxides exhibited superior gas sensing properties than those using Pt interdigitated electrodes. The result was attributed to the low contact resistance between the conducting metal oxide and the sensing material. Consequently, we demonstrated the feasibility of conducting metal oxide interdigitated electrodes for novel gas sensors.

• Journal of Sensor Science and Technology
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• v.15 no.1
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• pp.53-57
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• 2006

This paper describes a novel processing technique for fabrication of polymer-derived SiCN (silicone carbonitride) microstructures for super-temperature MEMS applications. PDMS (polydimethylsiloxane) mold is fabricated on SU-8 photoresist using standard UV photolithographic process. Liquid precursor is injected into the PDMS mold. Finally, solid polymer structure is cross-linked using HIP (hot isostatic pressure) at $400^{\circ}C$, 205 bar. Optimum pyrolysis and annealing conditions are determined to form a ceramic microstructure capable of withstanding over $1400^{\circ}C$. The fabricated SiCN ceramic microstructure has excellent characteristics, such as shear strength (15.2 N), insulation resistance ($2.163{\times}10^{14}{\Omega}$) and BDV (min. 1.2 kV) under optimum process condition. These fabricated SiCN ceramic microstructures have greater electric and physical characteristics than bulk Si wafer. The fabricated SiCN microstructures would be applied for supertemperature MEMS applications such as heat exchanger and combustion chamber.

• Journal of Sensor Science and Technology
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• v.15 no.6
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• pp.406-410
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• 2006

The films of indium oxide $In_{2}O_{3}$) were deposited onto $SiO_{2}$ coated Si wafers by a thermal evaporation method. Substrate temperature was varied from $25^{\circ}C$ to $300^{\circ}C$. Deposition rate increased to $250^{\circ}C$ and then decreased rapidly. The crystallographic properties and surface morphologies of the films were investigated by X-ray diffraction (XRD) and scanning electron microscope (SEM), respectively. The films deposited at $250^{\circ}C$ were found to have a nanobelt structure. Resistor-type gas-sensors were fabricated with $In_{2}O_{3}$ films using Pt as electrodes. The resistance variation of $In_{2}O_{3}$ films with the concentration of NO gas was measured. The $In_{2}O_{3}$ films deposited at $250^{\circ}C$ showed the highest sensitivity to the NO gas.

• Journal of Sensor Science and Technology
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• v.15 no.6
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• pp.386-390
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• 2006

This paper describes the ohmic contact formation of polycrystalline 3C-SiC films deposited on thermally grown Si wafers. In this work, a TiW (titanium tungsten) film as a contact material was deposited by RF magnetron sputter and annealed with the vacuum process. The specific contact resistance (${\rho}_{c}$) of the TiW contact was measured by using the C-TLM (circular transmission line method). The contact phase and interfacial reaction between TiW and 3C-SiC at high-temperature as also analyzed by XRD (X-ray diffraction) and SEM (scanning electron microscope). All of the samples didn't show cracks of the TiW film and any interfacial reaction after annealing. Especially, when the sample was annealed at $800^{\circ}$ for 30 min., the lowest contact resistivity of $2.90{\times}10{\Omega}cm^{2}$ was obtained due to the improved interfacial adhesion. Therefore, the good ohmic contact of polycrystalline 3C-SiC films using the TiW film is very suitable for high-temperature MEMS applications.

• Journal of Sensor Science and Technology
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• v.13 no.3
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• pp.195-198
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• 2004

For a diffusion barrier against copper, tantalum nitride films have been deposited on $SiO_{2}$ by atomic layer deposition (ALD), using PEMAT(Pentakis(ethylmethylamino)tantalum) and $NH_{3}$ as precursors, Ar as purging gas. The deposition rate of TaN at substrate temperature $250^{\circ}C$ was about $0.67{\AA}$ per one cycle. The stability of TaN films as a Cu diffsion barrier was tested by thermal annealing for 30 minutes in $N_{2}$ ambient and characterized through XRD, sheet resistance, and C-V measurement(Cu($1000{\AA}$)/TaN($50{\AA}$)/$SiO_{2}$($2000{\AA}$)/Si capacitor fabricated), which prove the TaN film maintains the barrier properties Cu below $400^{\circ}C$.

• Proceedings of the Korean Geotechical Society Conference
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• 2010.09b
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• pp.45-52
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• 2010

Thermal properties of geomaterial are overlooked with other geomechanical properties. The transient line-source (TLS) method is one of the most used testing methods for measuring the thermal conductivity (K) and thermal diffusivity ($\alpha$) of materials. But more recently, Transient Plane-Source method was developed to measure these. It has several advantage of comparing with TSL method, but there has not been documented application in geomaterial. A Resistance Temperature Detector is used to construct sensor. For durability of Probe, Adopt a new technique that two probes are bonded in exact matching. For standard materials, such as glycerin, and ice the measured K and a values of these materials were generally within 2-5% from the standard values in the literature. This document present to evaluate the thermal properties of geomaterials and its application was tested for varying degree of saturation using the Transient Plane Source method. The result of this study suggests that it is an comparatively accurate method for simultaneously measuring thermal conductivity and thermal diffusivity and can identify the feasibility to geomaterial.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.135-139
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• 2001

Contour vibration mode piezoelectric transformers were designed and fabricated to the square plate with size of $27.5{\times}27.5{\times}2.5(2.6,\;3.0)mm^3$ using PNW-PMN-PZT ceramics. Electrical characteristics of the piezoelectric transformer were investigated for fluorescent lamp ballast application. The electrical properties and characteristic temperature rise were measured using oscilloscope and infrared temperature sensor. A 28W fluorescent lamp was successfully driven by the fabricated transformers. After driving the lamp using Power Amplifier for 24 min, the output power, efficiency and characteristic temperature rise of PT2 piezoelectric transformer showed the appropriate values of 28.01 W, 99.43% and $11^{\circ}C$, respectively. The electronic ballast using PT2 piezoelectric transformer showed an excellent output power of 28.85 W and efficiency of 86.3%, respetively.