• Journal of Information Display
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• v.10 no.4
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• pp.171-174
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• 2009

The optical and electrical properties of the amorphous indium gallium zinc oxide thin-film transistor ($\alpha$-IGZO TFT) were studied. When the $\alpha$-IGZO TFT was illuminated at a wavelength of 660 nm, the off-state drain current slightly increased, while below 550 nm it increased significantly. The $\alpha$-IGZO TFT was found to be extremely sensitive, with deep-level defects at approximately 2.25 eV near the midgap. After UV light illumination, a slight change occurred on the surface of the $\alpha$-IGZO films, such as in terms of the oxygen 1s spectra, resistivity, and carrier concentrations. It is believed that these results will provide information regarding the photo-induced behaviors in the $\alpha$-IGZO films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.162-165
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• 1996

It is well shown that the metallophthalocyanine (MPcs) are sensitive to tonic gaseous molecules such as NO$_2$ and also chemically and thermally stable. Therefore, lots of MPcs are studied for the potential chemical sensor for NO$_2$ gas using quartz crystal microbalance(QCM) or electrical conductivity. In this study, thin films of octa(2-ethylhexyloxy) copper-phthalocyaninc ware prepared by Langmuir-Blodgett method and characterized by using UV-VIS spectrascopy and cllipsometry. Transfer condition, film characterization, and preliminary results of current-voltage(I-V) characteristics of these films exposed to NO$_2$ gas as a function of film thickness will be discusscd.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.5
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• pp.521-525
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• 2004

Crystalline carbon nitride films were attempted for an application of humidity sensors. The films were deposited on $Al_2$O$_3$substrate having intermigrated electrodes by reactive rf magnetron sputtering system. The film revealed a good humidity-resistance characteristics as well as humidity-capacitance ones in the humidity range of 10∼95 RH(%). Temperature dependence was also investigated. These results suggest that the carbon nitride film has a possibility for new humidity-sensitive material.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.591-592
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• 2006

We studied about the manufacture of the drain-source contacts for OTFTs(organic thin-film transistors) by using screen printing method. The conductive fillers used Ag and carbon black. The conductive contacts with $100{\mu}m$ of channel length were screen printed on a silicon dioxide gate dielectric layer and, the pentacene semiconductor was deposited via vacuum deposition. As a result of studying various conductive pastes, we could obtain the OTFTs which exhibited field-effect behavior over arrange of drain-source and gate voltages, similar to devices employing deposited Au contacts. By using screen-printing with conductive paste, the contacts are processed at low temperature, thereby facilitating their integration with heat sensitive substrates.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.121-124
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• 1996

It is well known that the metallo- phthalocyanine (MPcs) are sensitive to toxic gaseous molecules such as NO$_2$and also chemically and thermally stable. Therefore, lots of MPcs have been studied for the potential chemical sensor for NO$_2$gas using quartz crystal microbalance(QCM) or electrical conductivity. In this study, thin films of octa(2-ethylhexyloxy) copper-phthalocyanine were prepared by Langmuir -Blodgett method and characterized by using UV-VIS spectroscopy and ellipsometry. Transfer condition, and characterization of LB films were investigated and preliminary results of current-voltage(I-V) characteristics of these films exposed to NO$_2$gas as a function of film thickness, temperature and temperature were discussed.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1233-1235
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• 1994

In this work, polyimide thin films fabricated by the electrophoretic deposition are investigated as a humidity sensing material. Capacitance and impedance are measured with increasing relative humidity to find the nature of the film. From the results, the polyimide humidity sensor is not classified impedance change type but capacitance change type and appear more sensitive in the region of higher humidity than that of lower humidity.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.531-533
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• 2009

We've studied the optical and electrical properties of amorphous indium gallium zinc oxide thin-film transistor (a-IGZO TFT). When the a-IGZO TFT was illuminated at a wavelength of 660 nm, the offstate drain current was slightly increased, while below 550 nm it was increased significantly. The a-IGZO TFT was extremely sensitive, with deep-level defects at approximately 2.25 eV near the midgap.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.11a
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• pp.87-90
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• 2002

For the broad band wireless communications system, the composition of the millimeter wave system is needed. In other to commercialize that system, satisfaction of high frequency characteristic and low cost process is required. In this study, BPF which is very sensitive to the characteristic of fine line designed and fabricated using photoimageable thick film technology.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.402-405
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• 1999

The Study of this paper is to establish the optimum fabricating condition of specimens using Vapor Deposition Polymerization Method which belongs to a mode of preparation of functional organic thin films with dry process and to develop thin film type humidity sensor which has good humidity sensitive Characteristics. Scanning electron microscopy Atomic force microscopy were used to analyze the characteristics of thin film and the basic structure of the humidity sensor is a parallel capacitor which consists of three layers of Al/PI/Al. The characteristics of fabricated samples were measured under various conditions and obtained linear characteristics in the range of 20∼80%RH independent of temperature change and low hysteresis characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.05a
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• pp.79-82
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• 1994

We have manufacture Copper-tetra-tert-butylphalocyanine (CuTBP)Langmuir-Blodgett(LB) films, which is known be sensitive to NO$_2$ gab. A response of these films to the NO$_2$ gab was studied. A surface pleasure of 25mN/m was obtained as a proper one for a film deposition. A deposited film status was identified with Uv/visible absorption spectra, ellipsometry measurements, and current-voltage(I-Y) characteristics. The NO$_2$ gas response experiments under 200ppm conducentration show that there are increment of electrical conductivity by 12 times, 5 seconds of response time, and 5 seconds of response time, and 90 seconds of recovery time.