Journal of Information Display

The Korean Infomation Display Society (한국정보디스플레이학회)
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Light Effects of the Amorphous Indium Gallium Zinc Oxide Thin-Film Transistor

  • Lee, Keun-Woo (School of Electrical and Electronic Engineering, Yonsei University) ;
  • Shin, Hyun-Soo (School of Electrical and Electronic Engineering, Yonsei University) ;
  • Heo, Kon-Yi (School of Electrical and Electronic Engineering, Yonsei University) ;
  • Kim, Kyung-Min (School of Electrical and Electronic Engineering, Yonsei University) ;
  • Kim, Hyun-Jae (School of Electrical and Electronic Engineering, Yonsei University)
  • Published : 2009.12.31
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Abstract

The optical and electrical properties of the amorphous indium gallium zinc oxide thin-film transistor ($\alpha$-IGZO TFT) were studied. When the $\alpha$-IGZO TFT was illuminated at a wavelength of 660 nm, the off-state drain current slightly increased, while below 550 nm it increased significantly. The $\alpha$-IGZO TFT was found to be extremely sensitive, with deep-level defects at approximately 2.25 eV near the midgap. After UV light illumination, a slight change occurred on the surface of the $\alpha$-IGZO films, such as in terms of the oxygen 1s spectra, resistivity, and carrier concentrations. It is believed that these results will provide information regarding the photo-induced behaviors in the $\alpha$-IGZO films.

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References

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