• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.4
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• pp.237-245
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• 2002

A new type of RF MEMS switch for low voltage actuation, high broadband application and high power capability is presented. Mechanical and electromagnetic simulations of this new RF MEMS switch type are shown and the fabrication process and measurement results are given. The switching element consists of a cantilever which is fixed by a suspension spring to the ground of the coplanar line. The closing voltage is 16V. The switches exhibit low insertion loss (<0.85dB@30GHz) with good isolation (>22dB@30GHz).

• The Transactions of the Korean Institute of Power Electronics
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• v.18 no.2
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• pp.199-204
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• 2013

Recently, the demand for fuel efficient electric vehicles (EVs) and hybrid electric vehicles (HEVs) has been growing globally. Due to the increased number of switching devices in the electrified vehicles, the probability of the semiconductor device failure is much higher than in other application areas. A sudden failure in one of the power switches and insufficient power management ability in the systems not only decreases system performance, but also leads to critical safety problems. In this paper, novel switch open circuit fault detection method is proposed, and the proposed approach is verified by experiments.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.21 no.12
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• pp.3246-3255
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• 1996

A threshold voltage extraction scheme which does not need matched replica of the MOSFET under test is proposed. In contrast to alternative methods, the accuracy of the proposed scheme does not depend on the matching of the test transistors. The proposed scheme has been implemented in a matching-free way using a switched-capacitor subtracting ampliier and a dynmic current mirror. Nonideal effects associated with these circuits, such as non-zero offset voltages and finite gains of op-amps, capcitor mismateches, and charge injection of MOS switches, are investigated and compensated. The circuit has been designed using ISRC 1.5.mu.m CMOS process parameters andfabricated at Inter-University semiconductor Research Center, and its performance has been evaluated.

• Proceedings of the KIEE Conference
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• 1989.07a
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• pp.522-526
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• 1989

Recently developments of high-speed Semi-conductor Switches as Power MOSFETS, Power IGBT, power SIT have enwidened the performance of classical inverter configuration, and also allowed the practical applications of new inverter configuration, with improved performance and wider operating zones. Static power converters are now used in a great variety of applications including induction heating, high-frequency generation, DC/DC power converter, etc.

• KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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• v.3B no.1
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• pp.37-43
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• 2003

This paper proposes a soft-switching current source inverter for a photovoltaic power system. The proposed inverter has an H-type switched-capacitor module composed of two semiconductor switches, two diodes, and an LC resonant circuit. The operation of the proposed system was analyzed by a theoretical approach with equivalent circuits and was verified by computer simulations with SPICE and experimental implementation with a hardware prototype. The proposed system could be effectively applied for the power converter of photovoltaic power system interconnected with the AC power system.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.3
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• pp.136-145
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• 2006

Two major processing technologies of GaAs HBT and pHEMT have been released in production at Win Semiconductors corp. to address the strong demands of power amplifiers and switches for both handset and WLAN communications markets. Excellent performance with low processing cost and die shrinkage features is reported from the manufactured MMICs. With the stringent tighter manufacturing quality control WIN has successfully become one of the major pure open foundry house to serve the communication industries. The advancing of both technologies to include E/D-pHEMTs and BiHEMTs likes for multifunctional integration of PA, LNA, switch and logics is also highlighted.

• Journal of Industrial Technology
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• v.34
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• pp.71-78
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• 2014

Recently, using the electronic devices was increased with semiconductor developments. So, the EMI(Electromagnetic interference) problem become to important issue for coexistence with each electronic devices. The EMI is caused by switching operation from the power switches as the FET and the transistor in power conversion devices. In this paper, the hybrid EMI filter that composed with active components and passive components was described. The EMI filter is applied to the 160 watts LED driver experimentally verify the performance. The hybrid EMI filter is compared with non-filter, only passive filter and only active filter. The proposed EMI filter attenuated CM noise more than traditional passive filter.

• Proceedings of the KIEE Conference
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• 2015.07a
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• pp.249-250
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• 2015

Technological advance of power elcetronic devices using semiconductor switches in last several decades, invoke the increase of switching devices' penetration in the system like STATCOM or HVDC and also, increase the difficulty to adjust switching characteristics in the virtual simulating configuration, which are not capable of reflect the detailed phenomena. To investigate harmful effect of switching devices into the grid, detailed modeling of power electronic devices are necessary, and the first step for entire grid modelling is simulate power system in time domain model. In this paper, simple two bus system with synchronous generator and infinite bus on the other side has been compromised in two simulation environment, using PSS/E and Matlab/Simulink. Comparing the result of two simulation result will give answers to the fundamental difference between two type of simulation environment.

• 한국컴퓨터산업교육학회:학술대회논문집
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• 2003.11a
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• pp.95-98
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• 2003

Power semiconductors are being currently used as a application of intelligent power inverters to a refrigerator, a washing machine and a vacuum cleaner as well as core parts of industrial system. The rating of semiconductor devices is an important factor in decision on the field of application and the forward blocking voltage is one of factors in decision of the rating. The Power MOS device has a merit of high input impedance, short switching time, and stability in temperature as well known. Power MOS devices are mainly used as switches in the field of power electronics, especially the on-state resistance and breakdown voltage are regarded as the most important parameters. Power MOS devices that enable a small size, a light weight, high-integration and relatively high voltage are required these days. In this paper, we proposed the new lateral power MOS which has forward blocking voltage of 250V and contains trench electrodes and verified manufactural possibility by using TSUPREM-4 that is process simulator.

• Proceedings of the KIPE Conference
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• 1998.10a
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• pp.694-700
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• 1998

A novel zero-voltage-transition (ZVT) isolated PWM boost converter for single stage power factor correction (PFC) is presented to improve the performance of the previously presented ZVT converter[8]. A simple auxiliary circuit which includes only one active switch provides zero-voltage-switching (ZVS) condition to all semiconductor devices. (Two active switches are required for the previous ZVT converter) This leads to reduced cost and simplified control circuit comparing to the previous ZVT converter. The ZVS is achieved for wide line and load ranges with minimum device voltage and current stresses. Operation principle, control strategy and features of the proposed converter are presented and verified by the experimental results from a 1.5 kW, 100 KHz laboratory prototype.