JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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Manufacturing of GaAs MMICs for Wireless Communications Applications

  • Published : 2006.09.30
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Abstract

Two major processing technologies of GaAs HBT and pHEMT have been released in production at Win Semiconductors corp. to address the strong demands of power amplifiers and switches for both handset and WLAN communications markets. Excellent performance with low processing cost and die shrinkage features is reported from the manufactured MMICs. With the stringent tighter manufacturing quality control WIN has successfully become one of the major pure open foundry house to serve the communication industries. The advancing of both technologies to include E/D-pHEMTs and BiHEMTs likes for multifunctional integration of PA, LNA, switch and logics is also highlighted.

Keywords

References

  1. Cell-phone 2006 sale forecast report from market analyst Strategic Analytics
  2. T.C.L.Wee, T.C.Tsai, J.H. Huang, W.C. Lee, Y.S.Chou, Y.C.Wang, and W-J. Ho, 'InGaP HBT Technology Optimization for Next Generation High Performance Cellular Handset Power Amplifiers,' 2005 Mantech Digest, pp. 191-194
  3. W-J Ho, M. Sun, J. Hu, C-H Hua, H Saigusa, and D Day, S. Sprinkle, P. Reginella, J. Gering and P. Dicarlo, 'Manufacturing HBTs for wireless and broadband applications,' CSMAX Conference, Boston, MA2001
  4. Internal data reported by Wavics Co. in Korea
  5. H.C. Chiu, T.J. Yeh, Y.Y, Hsieh, T. Hwang, P. Yeh and C.S. Wu, 'Low Insertin Loss Switch Technology Using 6-inch InGaP/AlGaAs/InGaAs pHEMT Production Process,' pp.119-122, 2004 IEEE CSIC Digest
  6. F. McGrath, C. Varmazis, C. Kermarrec, R. Pratt, 'Novel high performance SPDT power switches using multi-gate FETs,' 1991 MTT-S Digest, pp. 839 - 842 https://doi.org/10.1109/MWSYM.1991.147137
  7. Zeji Gu, Dave Johnson, Steven Belletete, Dave Fryklund, 'A 2.3V PHEMT Power SP3T Antenna Switch IC for GSM Handsets,' 2003 IEEE GaAs IC Symposium Digest, pp.48 - 51
  8. Reliability of Gallium Arsenide MMICs, Aris Christou, John Wiley & Sons, 1992
  9. Cooke, H.F., 'Precise technique finds FET thermal resistance,' Microwaves&RF, Vol. 25, No. 8, pp.85-87, Aug. 1986