• Vacuum Magazine
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• v.3 no.3
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• pp.15-18
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• 2016

In future wearable electronic systems, 3-dimensional (3D) devices have attracted much attention due to their high density integration and low-power functionality. Among 3D devices, gate-all-around (GAA) nanowire transistor provides superior gate controllability, resulting in suppressing short channel effect and other drawbacks in 2D metal-oxide-semiconductor field-effect transistor (MOSFET). Silicon nanowires (SiNWs) are the most promising building block for GAA structure device due to their compatibility with the current Si-based ultra large scale integration (ULSI) technology. Moreover, the theoretical limit for subthreshold swing (SS) of MOSFET is 60 mV/dec at room temperature, which causes the increase in Ioff current. To overcome theoretical limit for the SS, it is crucial that research into new types of device concepts should be performed. In our present studies, we have experimentally demonstrated feedback FET (FBFET) and tunnel FET (TFET) with sub-60 mV/dec based on SiNWs. Also, we fabricated SiNW based complementary TFET (c-TFET) and SiNW complementary metal-oxide-semiconductor (CMOS) inverter. Our research demonstrates the promising potential of SiNW electronic devices for future wearable electronic systems.

• Journal of the Semiconductor & Display Technology
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• v.16 no.3
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• pp.31-35
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• 2017

We have fabricated flexible and stretchable pressure sensors using silver nanowires (AgNWs) and analyzed their electric responses. AgNWs are spray coated directly onto uncured polydimethylsiloxane (PDMS) such that AgNWs penetrate into the uncured PDMS, enhancing the adhesion properties of AgNWs. However, the single-layered AgNW sensor exhibits unstable electric response and low pressure sensitivity. To tackle it, we have coated a conductive polymer, poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) onto the AgNW layer. Such a hybrid bilayer sensor ensures a stable electric response because the over-coating layer of PEDOT:PSS effectively suppresses the protrusion of AgNWs from PDMS during release. To enhance the sensitivity further, we have also fabricated a stacked bilayer AgNW sensor. However, its electric response varies depending sensitively on the initial overlap pressure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.8
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• pp.632-638
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• 2012

The prepartion of various metal oxide nanostructures via hydrothermal method, hydrolysis, thermal evaporation and electrospinning and their applications to chemoresistive sensors have been investigated. Hierarchical and hollow nanostructures prepared by hydrothermal method and hydrolysis showed the high response and fast responding kinetics on account of their high gas accessibility. Thermal evaporation and electrospinning provide the facile routes to prepare catalyst-loaded oxide nanowires and nanofibers, respectively. The loading of noble metal and metal oxide catalyst were effective to achieve rapid response/recovery and selective gas detection.

• Journal of Sensor Science and Technology
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• v.25 no.3
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• pp.178-183
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• 2016

Semiconductor gas sensors based on metal oxide are widely used in a number of applications, from health and safety to energy efficiency and emission control. Nanomaterials including nanowires, nanorods, and nanoparticles have dominated the research focus in this field owing to their large number of surface sites that facilitate surface reactions. Recently, metal oxide hollow structures using soft templates have been developed owing to their high sensing properties with large-area uniformity. Here, we provide a brief overview of metal oxide hollow structures and their gas-sensing properties from the aspects of template size, morphology, and additives. In addition, a gas-sensing mechanism and perspectives are presented.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.288-288
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• 2013

Lithium-ion battery (LIB) is one of the most important rechargeable battery and portable energy storage for the electric digital devices. In particular, study about the higher energy capacity and longer cycle life is intensively studied because of applications in mobile electronics and electric vehicles. Generally, the LIB's capacity can be improved by replacing anode materials with high capacitance. The graphite, common anode materials, has a good cyclability but shows limitations of capacity (~374 mAh/g). On the contrary, silicon (Si) and germanium(Ge), which is same group elements, are promising candidate for high-performance LIB electrodes because it has a higher theoretical specific capacity. (Si:4200 mAh/g, Ge:1600 mAh/g) However, it is well known that Si volume change by 400% upon full lithiation (lithium insertion into Si), which result in a mechanical pulverization and poor capacity retention during cycling. Therefore, variety of nanostructure group IV elements, including nanoparticles, nanowires, and hollow nanospheres, can be promising solution about the critical issues associated with the large volume change. However, the fundamental research about correlation between the composition and structure for LIB anode is not studied yet. Herein, we successfully synthesized various structure of nanowire such as Si-Ge, Ge-Carbon and Si-graphene core-shell types and analyzed the properties of LIB. Nanowires (NWs) were grown on stainless steel substrates using Au catalyst via VLS (Vapor Liquid Solid) mechanism. And, core-shell NWs were grown by VS (Vapor-Solid) process on the surface of NWs. In order to characterize it, we used FE-SEM, HR-TEM, and Raman spectroscopy. We measured battery property of various nanostructures for checking the capacity and cyclability by cell-tester.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.2
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• pp.21-32
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• 2023

CuNWs(Copper nanowires) are attracting attention as a transparent electrode material because of their excellent electrical conductivity, high mechanical flexibility, and cost-effectiveness. However, since copper nanowires are easily oxidized, there is a disadvantage that properties of the transparent electrode may be deteriorated due to this, and researches are being conducted to improve this. Accordingly, in this review, various methods and studies to prevent oxidation and improve stability of copper nanowire transparent electrodes by using coating materials such as carbon-based materials, metals, and conductive polymers are introduced. Through this, we intend to provide solutions to solve the problem of development and oxidation of copper nanowire-based technology.

• Journal of the Semiconductor & Display Technology
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• v.17 no.2
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• pp.1-5
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• 2018

Elastic resistive pressure sensor is fabricated by a direct spray coating of silver nanowires (AgNWs) on uncured polydimethylsiloxane (PDMS) and an additional coating of a conductive polymer, poly(3,4-ethylenedioxythiophene): poly (styrene sulfonate) (PEDOT:PSS). To improve the sensitive and stability, we have fabricated sandwich-structured AgNW/polymer sensor where two AgNW/polymer-coated PDMS films are laminated with the conducting surfaces contacted by pressure lamination. It shows a resistance decrease upon loading due to the formation of dense network of AgNWs. It is demonstrated that the sandwich-structured AgNW/polymer sensor exhibits very high sensitivity ($2.59kPa^{-1}$) and gauge factor (37.8) in the low pressure regime. It can also detect a subtle placement and removal of a weight as low as 3.4 mg, the corresponding pressure of which is about 5.4 Pa. It is shown that the protrusion of AgNWs from PDMS is suppressed substantially by the over-coated PEDOT:PSS layer, thereby reducing hysteresis and rendering the sensor more stable.

• Journal of the Semiconductor & Display Technology
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• v.19 no.4
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• pp.6-10
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• 2020

The silver nanowires (AgNWs) were synthesized by the conventional polyol process, which revealed 25 ㎛ and 30 nm of average length and diameter, respectively. The synthesized AgNWs were applied to the CdSe/CdZnS quantum dot (QD) based transparent light-emitting device (LED). The device using a randomly networked AgNWs electrode had some problems such as the high threshold voltage (for operating the device) due to the random pores from the networked AgNWs. As a method of improvement, a composite electrode was formed by overlaying the ZnO:Ga on the AgNWs network. The device used the composite electrode revealed a low threshold voltage (4.4 Vth) and high current density compared to the AgNWs only electrode device. The brightness and current density of the device using composite electrode were 55.57 cd/㎡ and 41.54 mA/㎠ at the operating voltage of 12.8 V, respectively, while the brightness and current density of the device using (single) AgNWs only were 1.71 cd/㎡ and 2.05 mA/㎠ at the same operating voltage. The transmittance of the device revealed 65 % in a range of visible light. Besides the reliability of the devices was confirmed that the device using the composite electrode revealed 2 times longer lifetime than that of the AgNWs only electrode device.

• Transactions on Electrical and Electronic Materials
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• v.15 no.5
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• pp.262-264
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• 2014

Pristine ZnO, 3 wt.% Ga-doped (3GZO) and 3 wt.% Ag-doped (3SZO) ZnO nanowires (NWs) were grown using the hot-walled pulse laser deposition (HW-PLD) technique. The doping of Ga and Ag in ZnO NWs was observed by analyzing the optical and chemical properties. We optimized the synthesis conditions, including processing temperature, time, gas flow, and distance between target and substrate for the growth of pristine and doped ZnO NWs. The diameter and length of pristine and doped ZnO NWs were controlled under 200 nm and several ${\mu}m$, respectively. Low temperature photoluminescence (PL) was performed to observe the optical property of doped NWs. We clearly observed the shift of the near band edge (NBE) emission by using low temperature PL. In the case of 3GZO and 3SZO NWs, the center photon energy of the NBE emissions shifted to low energy direction using the Burstein Moss effect. A strong donor-bound exciton peak was found in 3 GZO NWs, while an acceptor-bound exciton peak was found in 3SZO NWs. X-ray photoelectron spectroscopy (XPS) also indicated that the shift of binding energy was mainly attributed to the interaction between the metal ion and ZnO NWs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.245-245
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• 2009

l-D nanostructured materials have much more attention because of their outstanding properties and wide applicability in device fabrication. Copper oxide(CuO) has been realized as a p-type metal oxide semiconductor with narrow band gap of 1.2 -1.5eV. Copper oxide nanostructures can be synthesized by various growth method such as oxidation reaction, thermal evaporation thermal decomposition, sol-gel. and Mostly CuO nanowire prepared on the Cu substrate such as Copper foil, grid, plate. In this study, CuO NWs were grown by thermal oxidation (at various temperatures in air (1 atm)) of Cu metal deposited on CuO (20nm)/$SiO_2$(250nm)/Si. A 20nm-thick CuO layer was used as an adhesion layer between Cu metal and $SiO_2$