• Journal of Sensor Science and Technology
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• v.32 no.3
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• pp.169-173
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• 2023

With the increasing concern of global warming caused by greenhouse gases owing to the recent industrial development, there is a growing need for advanced technology to control these emissions. Among the various greenhouse gases, nitrogen dioxide (NO₂) is a major contributor to global warming and is mainly released from sources, such as automobile exhaust and factories. Although semiconductor-type NO₂ gas sensors, such as SnO₂, have been extensively studied, they often require high operating temperatures and complicated manufacturing processes, while lacking selectivity, resulting in inaccurate measurements of NO₂ gas levels. To address these limitations, a novel sensor using PbS quantum dots (QDs) was developed, which operates at low temperatures and exhibits high selectivity toward NO₂ gas owing to its strong oxidation reaction. Furthermore, the use of P3HT conductive polymer improved the thin film quality, reactivity, and reaction rate of the sensor. The sensor demonstrated the ability to accurately measure NO₂ gas concentrations ranging from 500 to 100 ppm, with a 5.1 times higher sensitivity, 1.5 times higher response rate, and 1.15 times higher recovery rate compared with sensors without P3HT.

• Korean Journal of Materials Research
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• v.34 no.1
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• pp.27-33
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• 2024

Al₂O₃ has excellent sintering properties and is important in semiconductor manufacturing processes that require high-temperature resistance and chemical inertness in a plasma environment. In this study, a comprehensive analysis of the chemical characteristics, physical properties, crystal structure, and dispersion stability of three commercially available Al₂O₃ powders was conducted. The aim was to provide a technological foundation for selecting and utilizing appropriate Al₂O₃ powders in practical applications. All powders exhibited α-Al₂O₃ as the main phase, with the presence of beta-phase Na₂O-11Al₂O₃ as the secondary phase. The highest Na⁺ ion leaching was observed in the aqueous slurry state due to the presence of the secondary phase. Although the average particle size difference among the three powders was not significant, distinct differences in particle size distribution were observed. ALG-1SH showed a broad particle size distribution, P162 exhibited a bimodal distribution, and AES-11 displayed a uniform unimodal distribution. High-concentration Al₂O₃ slurries showed differences in viscosity due to ion release when no dispersant was added, affecting the electrical double-layer thickness. Polycarboxylate was found to effectively enhance the dispersion stability of all three powders. In the dispersion stability analysis, ALG-1SH exhibited the slowest sedimentation tendency, as evidenced by the low TSI value, while P162 showed faster precipitation, influenced by the particle size distribution.

• Clean Technology
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• v.29 no.4
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• pp.255-261
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• 2023

Power semiconductors are semiconductors used for power conversion, transformation, distribution, and control. Recently, the global demand for high-voltage power semiconductors is increasing across various industrial fields, and optimization research on high-voltage IGBT components is urgently needed in these industries. For high-voltage IGBT development, setting the resistance value of the wafer and optimizing key unit processes are major variables in the electrical characteristics of the finished chip. Furthermore, the securing process and optimization of the technology to support high breakdown voltage is also important. Etching is a process of transferring the pattern of the mask circuit in the photolithography process to the wafer and removing unnecessary parts at the bottom of the photoresist film. Ion implantation is a process of injecting impurities along with thermal diffusion technology into the wafer substrate during the semiconductor manufacturing process. This process helps achieve a certain conductivity. In this study, dry etching and wet etching were controlled during field ring etching, which is an important process for forming a ring structure that supports the 3.3 kV breakdown voltage of IGBT, in order to analyze four conditions and form a stable body junction depth to secure the breakdown voltage. The field ring ion implantation process was optimized based on the TEG design by dividing it into four conditions. The wet etching 1-step method was advantageous in terms of process and work efficiency, and the ring pattern ion implantation conditions showed a doping concentration of 9.0E13 and an energy of 120 keV. The p-ion implantation conditions were optimized at a doping concentration of 6.5E13 and an energy of 80 keV, and the p+ ion implantation conditions were optimized at a doping concentration of 3.0E15 and an energy of 160 keV.

• Asia pacific journal of information systems
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• v.20 no.3
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• pp.191-204
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• 2010

Recently, the CO2 emission and energy consumption have become critical global issues to decide the future of nations. Especially, the spread of IT products and the increased use of internet and web applications result in the energy consumption and CO2 emission of IT industry though information technologies drive global economic growth. EU, the United States, Japan and other developed countries are using IT related environmental regulations such as WEEE(Waste Electrical and Electronic Equipment), RoHS(Restriction of the use of Certain Hazardous Substance), REACH(Registration, Evaluation, Authorization and Restriction of CHemicals) and EuP(Energy using Product), and have established systematic green business/IT strategies to enhance the competitiveness of IT industry. For example, the Japan government proposed the "Green IT initiative" for being compatible with economic growth and environmental protection. Not only energy saving technologies but energy saving systems have been developed for accomplishing sustainable development. Korea's CO2 emission and energy consumption continuously have grown at comparatively high rates. They are related to its industrial structure depending on high energy-consuming industries such as iron and steel Industry, automotive industry, shipbuilding industry, semiconductor industry, and so on. In particular, export proportion of IT manufacturing is quite high in Korea. For example, the global market share of the semiconductor such as DRAM was about 80% in 2008. Accordingly, Korea needs to establish a systematic strategy to respond to the global environmental regulations and to maintain competitiveness in the IT industry. However, green competitiveness of Korea ranked 11th among 15 major countries and R&D budget for green technology is not large enough to develop energy-saving technologies for infrastructure and value chain of low-carbon society though that grows at high rates. Moreover, there are no concrete action plans in Korea. This research aims to deduce the priorities of the Korean green business/IT strategies to use multi attribute weighted average method. We selected a panel of 19 experts who work at the green business related firms such as HP, IBM, Fujitsu and so on, and selected six assessment indices such as the urgency of the technology development, the technology gap between Korea and the developed countries, the effect of import substitution, the spillover effect of technology, the market growth, and the export potential of the package or stand-alone products by existing literature review. We submitted questionnaires at approximately weekly intervals to them for priorities of the green business/IT strategies. The strategies broadly classify as follows. The first strategy which consists of the green business/IT policy and standardization, process and performance management and IT industry and legislative alignment relates to government's role in the green economy. The second strategy relates to IT to support environment sustainability such as the travel and ways of working management, printer output and recycling, intelligent building, printer rationalization and collaboration and connectivity. The last strategy relates to green IT systems, services and usage such as the data center consolidation and energy management, hardware recycle decommission, server and storage virtualization, device power management, and service supplier management. All the questionnaires were assessed via a five-point Likert scale ranging from "very little" to "very large." Our findings show that the IT to support environment sustainability is prior to the other strategies. In detail, the green business /IT policy and standardization is the most important in the government's role. The strategies of intelligent building and the travel and ways of working management are prior to the others for supporting environment sustainability. Finally, the strategies for the data center consolidation and energy management and server and storage virtualization have the huge influence for green IT systems, services and usage This research results the following implications. The amount of energy consumption and CO2 emissions of IT equipment including electrical business equipment will need to be clearly indicated in order to manage the effect of green business/IT strategy. And it is necessary to develop tools that measure the performance of green business/IT by each step. Additionally, intelligent building could grow up in energy-saving, growth of low carbon and related industries together. It is necessary to expand the affect of virtualization though adjusting and controlling the relationship between the management teams.

• 대한공업교육학회지
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• v.38 no.2
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• pp.267-286
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• 2013

Recently, the advanced company has been sparing no efforts in improving necessary core knowledge and technology to achieve outstanding work performance. In this rapidly changing knowledge-based society, the company has confronted the task of creating a high value-added knowledge. The role of R&D workforce that corresponds to the characteristic and role of knowledge worker is getting more significant. As the life cycle of technical knowledge and skill shortens, in every industry, the technical knowledge and skill have become essential elements for successful business. It is difficult to improve competitiveness of the company without enhancing the competency of individual and organization. As the competency development which is a part of human resource management in the company is being spread now, it is required to focus on the research of determining necessary competency and to analyze the competency of a core organization in the research institute. 'H' is the semiconductor manufacturing company which has a affiliated research institute with its own R&D engineers. Based on focus group interview and job analysis data, vision and necessary competency were confirmed. And to confirm whether the required competency by job is different or not, analysis was performed by dividing members into workers who are in charge of circuit design and design before process development and who are in the process actualization and process development. Also, this research included members' importance awareness of the determined competency. The interview and job analysis were integrated and analyzed after arranging by groups and contents and the analyzed results were resorted after comparative analysis with a competency dictionary of Spencer & Spencer and competency models which are developed from the advanced research. Derived main competencies are: challenge, responsibility, and prediction/responsiveness, planning a new business, achievement -oriented, training, cooperation, self-development, analytic thinking, scheduling, motivation, communication, commercialization of technology, information gathering, professionalism on the job, and professionalism outside of work. The highly required competency for both jobs was 'Professionalism'. 'Attitude', 'Performance Management', 'Teamwork' for workers in charge of circuit design and 'Challenge', 'Training', 'Professionalism on the job' and 'Communication' were recognized to be required competency for those who are in charge of process actualization and process development. With above results, this research has determined the necessary competency that the 'H' company's affiliated research institute needs and found the difference of required competency by job. Also, it has suggested more enthusiastic education methods or various kinds of education by confirming the importance awareness of competency and individual's level of awareness about the competency.

• Clean Technology
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• v.29 no.2
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• pp.126-134
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• 2023

Direct catalytic decomposition is a promising method for controlling the emission of nitrous oxide (N₂O) from the semiconductor and display industries. In this study, a γ-Al₂O₃ catalyst was developed to reduce N₂O emissions by a catalytic decomposition reaction. The γ-Al₂O₃ catalyst was prepared by an extrusion method using boehmite powder, and a N₂O decomposition test was performed using a catalyst reactor that was approximately 25.4 mm (1 in) in diameter packed with approximately 5 mm of catalysts. The N₂O decomposition tests were carried out with approximately 1% N₂O at 550 to 750 ℃, an ambient pressure, and a GHSV=1800-2000 h^-1. To confirm the N₂O decomposition properties and the effect of O₂ and steam on the N₂O decomposition, nitrogen, air, and air and steam were used as atmospheric gases. The catalytic decomposition tests showed that the 1% N₂O had almost completely disappeared at 700 ℃ in an N₂ atmosphere. However, air and steam decreased the conversion rate drastically. The long term stability test carried out under an N₂ atmosphere at 700 ℃ for 350 h showed that the N₂O conversion rate remained very stable, confirming no catalytic activity changes. From the results of the N₂O decomposition tests and long-term stability test, it is expected that the prepared γ-Al₂O₃ catalyst can be used to reduce N₂O emissions from several industries including the semiconductor, display, and nitric acid manufacturing industry.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.4
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• pp.39-46
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• 2017

This paper presents the fabrication of ceramic insulation layer on metallic heat spreading substrate, i.e. an insulated metal substrate, for planar type heater. Aluminum alloy substrate is preferred as a heat spreading panel due to its high thermal conductivity, machinability and the light weight for the planar type heater which is used at the thermal treatment process of semiconductor device and display component manufacturing. An insulating layer made of ceramic dielectric film that is stable at high temperature has to be coated on the metallic substrate to form a heating element circuit. Two technical issues are raised at the forming of ceramic insulation layer on the metallic substrate; one is delamination and crack between metal and ceramic interface due to their large differences in thermal expansion coefficient, and the other is electrical breakdown due to intrinsic weakness in dielectric or structural defects. In this work, to overcome those problem, selected metal oxide buffer layers were introduced between metal and ceramic layer for mechanical matching, enhancing the adhesion strength, and multi-coating method was applied to improve the film quality and the dielectric breakdown property.

• Korean Chemical Engineering Research
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• v.47 no.6
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• pp.715-719
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• 2009

The phase change electrode board for the bio-information detection through electrical property response of phase change material was developed in this study. We manufactured the electrode board using Aluminum first that is widely used in conventional semiconductor device process. Without further treatment, these aluminum electrodes tend to contain voids in PETEOS(plasma enhanced tetraethyoxysilane) material that are easily detected by cross-sectional SEM(Scanning Electron Microscope). The voids can be easily attacked and transformed into holes in between PETEOS and electrodes after etch back and washing process. In order to resolve this issue of Al electrode board, we developed a electrode board manufacturing method using low resistivity TiN, which has advantages in terms of the step-coverage of phase change($Ge_2Sb_2Te_5$, GST) thin film as well as thermodynamic stability, without etch back and washing process. This TiN material serves as the top and bottom electrode in PRAM(Phase-change Random Access Memory). The good connection between the TiN electrode and GST thin film was confirmed by observing the cross-section of TiN electrode board using SEM. The resistances of amorphous and crystalline GST thin film on TiN electrodes were also measured, and 1000 times difference between the amorphous and crystalline resistance of GST thin film was obtained, which is well enough for the signal detection.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.1
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• pp.31-39
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• 2014

For mobile application, semiconductor packages are increasingly moving toward high density, miniaturization, lighter and multi-functions. Typical wafer level packages (WLP) is fan-in design, it can not meet high I/O requirement. The fan-out wafer level packages (FOWLPs) with reconfiguration technology have recently emerged as a new WLP technology. In FOWLP, warpage is one of the most critical issues since the thickness of FOWLP is thinner than traditional IC package and warpage of WLP is much larger than the die level package. Warpage affects the throughput and yield of the next manufacturing process as well as wafer handling and fabrication processability. In this study, we investigated the characteristics of warpage and main parameters which affect the warpage deformation of FOWLP using the finite element numerical simulation. In order to minimize the warpage, the characteristics of warpage for various epoxy mold compounds (EMCs) and carrier materials are investigated, and DOE optimization is also performed. In particular, warpage after EMC molding and after carrier detachment process were analyzed respectively. The simulation results indicate that the most influential factor on warpage is CTE of EMC after molding process. EMC material of low CTE and high Tg (glass transition temperature) will reduce the warpage. For carrier material, Alloy42 shows the lowest warpage. Therefore, considering the cost, oxidation and thermal conductivity, Alloy42 or SUS304 is recommend for a carrier material.

• Applied Chemistry for Engineering
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• v.29 no.1
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• pp.10-17
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• 2018

POU (point of use) scrubbers were applied for the treatment of waste gases including PFCs (perfluorocompounds) exhausted from the CVD (chemical vapor deposition), etching, and cleaning processes of semiconductor and display manufacturing plant. The GWP (global warming potential) and atmosphere lifetime of PFCs are known to be a few thousands higher than that of $CO_2$, and extremely high temperature more than 3,000 K is required to thermally decompose PFCs. Therefore, POU gas scrubbers based on the thermal plasma technology were developed for the effective control of PFCs and industrial application of the technology. The thermal plasma technology encompasses the generation of powerful plasma via the optimization of the plasma torch, a highly stable power supply, and the matching technique between two components. In addition, the effective mixture of the high temperature plasma and waste gases was also necessary for the highly efficient abatement of PFCs. The purpose of this paper was to provide not only a useful technical information of the post-treatment process for the waste gas scrubbing but also a short perspective on R&D of POU plasma gas scrubbers.