• Journal of the Semiconductor & Display Technology
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• v.9 no.1
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• pp.55-59
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• 2010

In this study, we developed nonvolatile residue (NVR) real-time monitoring system to measure the nonvolatile residue particle in ultra pure water (UPW). This device has a capability of measuring 4 different channels, i.e., 10 nm, 30 nm, 50 nm, and 100 nm. Until now, the light scattering method to detect RAE(residue after evaporation) was the only choice. However, this method can detect RAE larger than ca. 50 nm. In ultra pure water, RAE particles are usually very small and hard to detect with conventional laser scattering devices. To detect very small RAEs, a new system is developed and tested. The system consists of an atomizer that generates RAE particles and a four channel condensation particle counter (CPC). During the several months' operation in manufacturing line, the system was successfully tested and showed reliable results.

• Korean Journal of Optics and Photonics
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• v.10 no.6
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• pp.507-511
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• 1999

A 10 GHz timing extracted signal which is phase-locked to a 10 Gbit/s mode-locked optical fiber laser pulse train is obtained using a tour-wave-mixing signal in semiconductor optical amplifier. The phase-locked loop wm, demonstrated ~Llccessful1y over 8 hours and found to have the lock-in frequency range of 30 KHz. 0 KHz.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.09a
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• pp.183-192
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• 2001

1- Buildup PCB technology is utilized to a bare chip attach substrate technology for packaging of semiconductor chip 2- Requirement for the substrate design rule is described in SIA International Technology Roadmap for Semiconductor. 3- There are seven fabrication methods of build-up technology. 4- Coating and lamination for resin and photo, and laser for micro via hope processes are available. Below $50\mu\textrm{m}$ in diameter is possible. 5- Fine pitch lines down to $30\mu\textrm{m}$ can be achieved by pattern plating with better electrical property. 6- Dielectric loss reduction is a key material improvement item for next generation build-up technology. 7- High band width up to 512 GB/s is possible with current wiring groundrule.

• Journal of the Optical Society of Korea
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• v.5 no.1
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• pp.5-8
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• 2001

In this work, we studied the effect of chirped grating on optical bistability in λ/4-shifted semiconductor distributed-feedback(DFB) devices, such as an etalon with nonlinear mirrors, a λ/4-shifted DFB waveguide and aλ/4-shifted DFB laser amplifier. We found that chirped DFB devices exhibit bistable switching at a lower input power.OCIS code : 050.2770, 190.1450, 190.5970, 230.0230.

• Journal of the Semiconductor & Display Technology
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• v.3 no.2
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• pp.35-40
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• 2004

The total relaxed stress in annealing and the thermal strain/stress were obtained from the identification of the residual stress-free state using electronic speckle pattern interferometry (ESPI). The residual stress fields in case of both single and film / substrate systems were modeled using the thermo-elastic theory and the relationship between relaxed stresses and displacements. We mapped the surface residual stress fields on the indented bulk Cu and the 0.5 $\mu\textrm{m}$ Au film by ESPI. In indented Cu, the normal and shear residual stress are distributed over -1.7 GPa to 700 MPa and -800 GPa to 600 MPa respectively around the indented point and in deposited Au film on Si wafer, the tensile residual stress is uniformly distributed on the Au film from 500 MPa to 800 MPa. Also we measured the residual stress by the x-ray diffractometer (XRD) for the verification of above residual stress results by ESPI...

• Bulletin of the Korean Chemical Society
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• v.23 no.6
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• pp.807-811
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• 2002

We present a hypothetical quantum scattering model to propose a novel electroluminescence device. Adoping with features of solid state semiconductor LED and exciplex laser, the cathode (electrol incoming potential) and anode(electron outgoing potential) are made to correspond to two 1-dimensional resonance supporting potentials, and the light emitting part to an interaction potential in the intermediate region. When an external voltage is applied, the electron flows into the cathode having small work function. Subsequently in flows via LUMO of the " electron incoming potential" loses kinetic energy emitting a photon, then continues to flow via LUMO of the "electron outgoing potential" unlike the conventional LUMO to HOMO transitions occurring in solid state semiconductor LED. In this model, the photon frequency can be controlled by adijusting the applied voltage. The model hopefully could be realized as partially conjugated hydrocarbon chains.

• Journal of the Semiconductor & Display Technology
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• v.6 no.1 s.18
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• pp.37-41
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• 2007

Recently PZT is used in ultra precision mechanism field. PZT has a small motion range although it has a high resolution. Many methods, such as inchworm, impact driving, etc., have been applied for the expansion of the motion range.? In this study, the new actuating mechanism for rotational motion with two PZT actuators is proposed. The ultra precision rotational actuator which is made by proposed mechanism is able to operate both coarse and fine motion. The design parameters of the proposed mechanism are considered to improve the performance of the system. The rotational stage which is applied by the proposed mechanism is fabricated. The resolution and velocity for fabricated rotational stage are measured by laser interferometer.

• Transactions on Electrical and Electronic Materials
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• v.5 no.6
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• pp.241-243
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• 2004

The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can be controlled by electrical or pulsed laser beam; hence some chalcogenide semiconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline state are assigned to binary states. In this letter, the characteristics of phase transition in differential chalcogenide thin film are investigated. Al was used for the electrode as the thickness of 100, 300, 500 nm, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.340-343
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• 2004

The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can controlled by electric pulses or pulsed laser hem: hence some chalcogenide semiconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline state are assigned to binary states. This letters researched into the characteristic of phase change transition in differential Chalcogenide thin films materials. The electrode used Al and experimented on 100nm, 300nm, 500nm respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.377-380
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• 2004

The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can controlled by electric pulses or pulsed laser beam; hence some chalcogenide semiconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline state are assigned to binary states. GeSbTe(GST), AsSbTe(AST), SeSbTe(SST) used to phase change materials by appling electrical pulses. Thickness of ternary chalcogenide thin films have about 100nm. Upper and lower electrode were made of Al. It is compared with I-V characteristics after impress the variable pulses.