• Journal of Electrical Engineering and information Science
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• v.2 no.6
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• pp.197-201
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• 1997

To realize 10-Gbit/s optical transmission systems, we designed and fabricated a limiting amplifier with extremely high operation frequencies over 10-GHz using AlGaAs/GaAs heterojunction bipolar transistors (HBTs), and investigated their performances. Circuit design and simulation were performed using SPICE and LABRA. A discrete AlGaAs/GaAs HBT with the emitter area of 1.5${\times}$10$\mu\textrm{m}$$^2$, used for the circuit fabrication, exhibited the cutoff frequency of 63GHz and maximum oscillation frequency of 50GHz. After fabrication of MMICs, we observed the very wide bandwidth of DC∼15GHz for a limiting amplifier from the on-wafer measurement. Ceramic-packaged limiting amplifier showed the excellent eye opening, the output voltage swing of 750mV\ulcorner, and the rise/fall time of 40ps, measured at the data rates of 10-Gbit/s.

• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.1
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• pp.61-66
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• 2009

We have investigated the noise sensitivity of low noise amplifier (LNA) at different frequency. This noise sensitivity analysis provides insights about noise parameters and it is very beneficial for making appropriate design trade-offs. From this work, the circuit designer can choose the adequate noise parameters tolerances.

• ETRI Journal
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• v.19 no.2
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• pp.35-47
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• 1997

A power amplifier operating at 3.3 V has been developed for CDMA/AMPS dual-mode cellular phones. It consists of linear GaAs power MESFET's, a new gate bias control circuit, and an output matching circuit which prevents the drain terminal of the second MESF from generating the harmonics. The relationship between the intermodulation distortion and the spectral regrowth of the power amplifier has been investigated with gate bias by using the two-tone test method and the adjacent channel leakage power ratio (ACPR) method of CDMA signals. The dissipation power of the power amplifier with a gate bias control circuit is minimized to below 1000 mW in the range of the low power levels while satisfying the ACPR of less than -26 dBc for CDMA mode. The ACPR of the power amplifier is measured to be -33 dBc at a high output power of 26 dBm.

• Journal of the Semiconductor & Display Technology
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• v.15 no.4
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• pp.22-26
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• 2016

In this paper, we measured the efficiency of the receiver for 5.8GHz Microwave Smartphone Charging. We have designed and fabricated 1W and 2W power amplifier, respectively. A 1W power amplifier used a TC3531 power device of TRANSCOM Inc. In addition, a 2W power amplifier using the two TC3531 devices was constructed with divider and combiner. We used the Wilkinson divider theory for divider and combiner. The voltage was measured using the 1W and 2W power amplifier and integrated receivers to the distance of 50cm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.8
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• pp.582-586
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• 2013

In this paper, a simple macro model of n-channel MOSFET with dual workfunction gate (DWFG) structure is proposed. The DWFG MOSFET has higher transconductance and lower drain conductance than conventional MOSFET. Thus analog circuit design using the DWFG MOSFET can improve circuit characteristics. Currently, device models of the DWFG MOSFET are insufficient, so simple series connected two MOSFET model is proposed. In addition, a two stage operational amplifier using the proposed DWFG MOSFET macro model is designed to verify the model.

• Journal of Radiation Protection and Research
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• v.35 no.2
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• pp.81-84
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• 2010

A CSA(Charge Sensitive Amplifier) was designed and fabricated for application in a radiation detection system based on a semiconductor detector such as Si, SiC, CdZnTe and etc.. A fabricated hybrid.type CSA was evaluated by comparison with a commercially available CSA. A comparison was performed by using calculation of ENC (Equivalent Noise Charge) and by using energy resolutions of fabricated radiation detectors based on Si. In energy resolution comparison, a fabricated CSA showed almost the same performance compared with a commercial one. In this study, feasibility of a fabricated CSA was discussed.

• IEIE Transactions on Smart Processing and Computing
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• v.5 no.1
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• pp.5-9
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• 2016

The modulation bandwidth of a reflective semiconductor optical amplifier (RSOA) is limited by carrier lifetime. Therefore, it is hard to directly modulate an RSOA with high-speed electrical signals. We theorize that an optical filter can act as an optical equalizer, compensating for the narrow bandwidth limitation imposed by the RSOA. By modeling a time-varying RSOA with a modified transfer matrix method (TMM), we simulated 25 Gbps operation of an RSOA with optical filtering effects. We investigated the impact of detuning the center wavelength of the optical filter on the modulation of an RSOA. The numerical results show that it is possible to modulate an RSOA with an optical filtering effect at 25 Gbps without electronic equalization or digital signal processing.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2002.11a
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• pp.11-15
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• 2002

3 V, 2.46GHz Low Noise Amplifier (LNA) have been designed for standard 0.35$\mu\textrm{m}$ CMOS process with one poly and four metal layers. This design includes on-chip biasing, matching network and multilayer spiral inductors. The single-ended amplifier provides a forward gain of 20.5dB with a noise figure 3.35dB, and an IIP3 of -6dBm while drawing 59mW total Power consumption

• Proceedings of the KIEE Conference
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• 1988.07a
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• pp.563-566
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• 1988

A current-controlled CMOS operational transconductance amplifier(OTA), whose transconductance is directly proportional to the DC bias current, has been developed for many electronic circuit applications. It features that its transconductance is insensitive to temperature unlike that of the bipolar OTA. This property makes it possible to use the proposed OTA as a basic buliding block in electrically variable circuit design. The SPICE simulation shows that the conversion sensitivity of the circuit is 44.62 mv /${\mu}A$ and the linearity error less than 0.54 % over a bias current range from 2 ${\mu}A$ to 120 ${\mu}A$ when the output is loaded with a 1${\Omega}$ resistor.

• Korean Journal of Optics and Photonics
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• v.10 no.4
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• pp.294-300
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• 1999

The density matrix is solved more rigorously, compared with the third-order pertubation method used in the conventional theory, for a semiconductor laser amplifier. Then the coupled wave equations are derived to explain the wavelength conversion due to the spectral hole burning in the semiconductor optical amplifier. It is shown that our results can explain the effect of saturation of the population density on the electric polarization, which affects the four-wave mixing and wavelength conversion, better than the conventional theroy where the third-order pertubation is used.