• 조명전기설비학회논문지
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• 제29권6호
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• pp.8-13
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• 2015

Recently, Illumination industry of LED module has been focused to industry technology for energy conservation of nation. The LED device is excellent to power efficiency due to semiconductor light source element. And the application to the lighting circuit technology can be designed to the sensitive lighting system for human sensitivity control. In this paper, as a process for analyzing the operating temperature of standardized electronic device including LED device has analyzed about fusing character with in designed micro fuse for electronic device protection from the over current. Using the de-rating technique, which is performed to micro fuse fusing test in the range of $-30^{\circ}C{\sim}120^{\circ}C$ thermostatic chamber. To the output data in each temperature zone, it is performed to first-order linear fitting. Additionally, applying the resistance temperature coefficient and statistical data for the reliable analysis has derived to the metal element resistance of micro fuse with temperature change of the thermostatic chamber. As a research result, The changed temperature effect of thermostatic chamber was confirmed regarding fusing time change.

• 한국전기전자재료학회논문지
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• 제18권4호
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• pp.375-380
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• 2005

CF₄ molecular gas is used in most of semiconductor manufacture processing and SF/sub 6/ molecular gas is widely used in industrial of insulation field. but both of gases have defect in global warming. C₃F/sub 8/ gas has large attachment cross-section more than these gases, moreover GWP, life-time and price of C₃F/sub 8/ gas is lower than them, therefor it is important to calculate transport coefficients of C₃F/sub 8/ gas like electron drift velocity, ionization coefficient, attachment coefficient, effective ionization coefficient and critical E/N. The aim of this study is to get these transport coefficients for imformation of the insulation strength and efficiency of etching process. In this paper, we calculated the electron drift velocity (W) in pure C₃F/sub 8/ molecular gas over the range of E/N=0.1∼250 Td at the temperature was 300 K and gas pressure was 1 Torr by the Boltzmann equation method. The results of this paper can be important data to present characteristic of gas for plasma etching and insulation, specially critical E/N is a data to evaluate insulation strength of a gas.

• JSTS:Journal of Semiconductor Technology and Science
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• 제17권1호
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• pp.56-64
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• 2017

In this paper, an advanced ZigBee (AZB) system for internet-of-things (IoT) applications is proposed which can support various data rates from 31.25 Kbps to 2 Mbps, and the implementation results of the AZB baseband processor are presented. Repetition coding for 32-chip direct-sequence spread spectrum (DSSS) symbol is applied for low rates under 250 Kbps to extend the coverage. Convolution coding, puncturing, and interleaving for non-DSSS symbol are performed for high rates from 500 Kbps to 2 Mbps for multi-media services. Simulation results show that the coverage increases at the rate of 51.8-77.3% for various environments compared with IEEE 802.15.4 ZigBee. AZB baseband processor was implemented in 180 nm CMOS process and total gate counts are 260K with the size of $5.8mm^2$.

• JSTS:Journal of Semiconductor Technology and Science
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• 제15권2호
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• pp.155-167
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• 2015

An adaptive equalization scheme based on all-digital jitter measurement is proposed for a continuous time linear equalizer (CTLE) preceding a clock and data recovery (CDR) in a receiver circuit for high-speed serial interface. The optimum equalization coefficient of CTLE is determined during the initial training period based on the measured jitter. The proposed circuit finds automatically the optimum equalization coefficient for CTLE with 20", 30", 40" FR4 channel at the data rate of 5 Gbps. The chip area of the equalizer including the adaptive controller is 0.14 mm2 in a $0.13{\mu}m$ process. The equalizer consumes 12 mW at 1.2 V supply during the normal operation. The adaptive equalizer has been applied to a USB3.0 receiver.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권6호
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• pp.745-753
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• 2016

This paper presents a fully synthesizable low power interconnect bus for millimeter-scale wireless sensor nodes. A segmented ring bus topology minimizes the required chip real estate with low input/output pad count for ultra-small form factors. By avoiding the conventional open drain-based solution, the bus can be fully synthesizable. Low power is achieved by obviating a need for local oscillators in member nodes. Also, aggressive power gating allows low-power standby mode with only 53 gates powered on. An integrated wakeup scheme is compatible with a power management unit that has nW standby mode. A 3-module system including the bus is fabricated in a 180 nm process. The entire system consumes 8 nW in standby mode, and the bus achieves 17.5 pJ/bit/chip.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.38-41
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• 2004

The oxidizer plays an important role in the metal chemical mechanical polishing(CMP) slurry. Currently, the oxidizer used in CMP slurry is nearly divided into several kinds such as $Fe(NO_3)_3$, $H_2O_2$, $KIO_3$, and $H_5IO_6$. It is generally known that oxidizer character of $H_2O_2$ is more effective than other oxidizers. In this work, we have been studied the characteristics for the $H_2O_2$ concentration of copper slurry, which can applicable in the recent semiconductor manufacturing process. Also, it plays an important role in the planarization of copper films using copper slurries during micro-electronic device fabrication. In this work, we confirmed that removal rate of Cu/TaN changed by $H_2O_2$ concentration on copper slurry. And we used $KMnO_4$ in the measurement method of $H_2O_2$. In analysis results, we confirmed that the difference of results is large. We thought that the difference was due to organic component existence. So in titration method of $H_2O_2$ concentration, we used $Na_2S_2O_3$ instead of $KMnO_4$ as solution. Consequently, using the titration method, we could calculate correct data reduced error. And $H_2O_2$ concentration has been adjusted to the target concentration of 0.1 wt%.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.132-132
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• 2011

For the programming volume of PRAM, Ge2Sb2Te5(GST) thin films have been dominantly used and prepared by physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD). Among these methods, ALD is particularly considered as the most promising technique for the integration of PRAM because the ALD offers a superior conformality to PVD and CVD methods and a digital thickness control precisely to the atomic level since the film is deposited one atomic layer at a time. Meanwhile, although the IST has been already known as an optical data storage material, recently, it is known that the IST benefits multistate switching behavior, meaning that the IST-PRAM can be used for mutli-level coding, which is quite different and unique performance compared with the GST-PRAM. Therefore, it is necessary to investigate a possibility of the IST materials for the application of PRAM. So far there are many attempts to deposit the IST with MOCVD and PVD. However, it has not been reported that the IST can be deposited with the ALD method since the ALD reaction mechanism of metal organic precursors and the deposition parameters related with the ALD window are rarely known. Therefore, the main aim of this work is to demonstrate the ALD process for IST films with various precursors and the conformal filling of a nano size programming volume structure with the ALD?IST film for the integration. InSbTe (IST) thin films were deposited by ALD method with different precursors and deposition parameters and demonstrated conformal filling of the nano size programmable volume of cell structure for the integration of phase change random access memory (PRAM). The deposition rate and incubation time are 1.98 A/cycle and 25 cycle, respectively. The complete filling of nano size volume will be useful to fabricate the bottom contact type PRAM.

• 대한화학회지
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• 제60권3호
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• pp.169-176
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• 2016

Borate 완충용액에서 Al의 부식과 부동화에 관하여 변전위법, 대 시간 전류법 그리고 다중 주파수 전기화학적 임피던스 측정법으로 조사하였다. 공기 또는 산소의 영향은 환원과정에 영향을 주었지만 산화반응에는 영향을 미치지 못 하는 것으로 보인다. 부동화 영역에서 생성되는 피막의 전기적 성질은 Mott-Schottky 식이 적용되는 n-type 반도체 성질을 보였다. 낮은 전극전위에서 생성되는 Al의 산화피막은 Al(OH)₃로 충분한 부동화 효과를 보이지 못하나, 전극전위가 증가하면서 Al₂O₃로 변하였다. Al₂O₃ 피막은 “전기장에 의한-이온의 이동” 과정에 의하여 성장하는 것으로 보인다.

• Korean Chemical Engineering Research
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• 제52권6호
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• pp.750-754
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• 2014

초고농도 과산화수소 제조를 위한 투과증발 공정의 정량적 위험성 분석을 수행하였다. 잠재적 주요 사고는 분해반응에 따른 폭발 및 화재이며 실험실 규모일 때 사고결과는 카테고리 3에 속하는 것으로 판단된다. 대상공정에서 분해반응이 일어나는 과정을 사건트리 형태로 모델링하고 사고원인들의 확률함수를 유사사건 발생빈도 자료를 근거로 설정하였다. 구축된 모델을 사용하여 사고율을 계산한 결과, 수용 가능한 위험수준, 즉 사고빈도가 $10^{-4}/yr$ 이하가 되려면 추가 안전장치가 필요한 것으로 파악되었다. 이를 위해 방호계층분석을 적용한 결과, 촉매반응을 막기 위한 본질적 안전설계, 과열을 막기 위한 SIF (safety instrumented function), 그리고 분해반응이 일어나더라도 폭발로 이어지지는 것을 막는 릴리프 시스템이 요구되었다. 제안된 방법은 과산화수소 농축을 포함한 다양한 화학공정의 안전관리시스템 개발에 기여할 수 있을 것으로 기대된다.

• 한국산학기술학회논문지
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• 제12권12호
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• pp.5832-5837
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• 2011

본 논문에서는 1 ${\mu}m$ CMOS 공정을 사용하여 LED 구동회로용 과열방지회로를 제안하였다. 제안하는 과열 방지회로는 $120^{\circ}C$에서 동작하며 $90^{\circ}C$에서 차단되도록 설계하였으며, 공정 오차에 따른 과열방지회로의 특성 변화가 많이 감소되었다. 세 가지 공정변화에 따른 특성 변화를 본 결과 제안하는 과열방지회로의 시뮬레이션 결과는 기존의 BJT 전류미러 방식의 과열방지회로보다 공정에 따른 온도변화가 약 7 % 줄어드는 것을 확인하였다. 또한 가상의 LED 구동회로에 연결하였을 때 과열로부터 LED 구동회로를 보호하는 것을 확인하였다.