• Macromolecular Research
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• 제17권9호
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• pp.631-637
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• 2009

This study examined the unique self-doping behavior of carboxylated polyaniline (PCA). The self-doped PCA was synthesized using an environmentally benign enzymatic polymerization method with cationic surfactants. XPS showed that HCl-doped PCA contained approximately 34% of protonated amines but self-doped PCA contained 9.6% of the doped form of nitrogen at pH 4. FTIR and elemental analysis showed that although the PCA was doped with the proton of strong acids at low pH via the protonation of amines, the self-doping mechanism of PCA at pH > 4 was mainly due to hydrogen bonding between the carboxylic acid group and amine group.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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• pp.303-306
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• 2005

We report the self-aligned low temperature poly silicon (LTPS) TFT process using simple doping process. In conventional LTPS-TFT, the Lightly Doped Drain (LDD) doping and source/drain doping are processed separately by aligning the gate with the source and drain during the gate lithography step. This ne w process not only fabricates fully self-aligned low temperature poly silicon TFTs with symmetric LDD structure but also simplifies the process flow with combined source/drain doping and LDD doping in one step. LDD doping process can be achieved using only source/drain doping process according to the new structure. In this paper, the TFT characteristics of NMOS and PMOS using the new doping process will be discussed.

• 전자공학회논문지A
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• 제32A권1호
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• pp.146-151
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• 1995

We have studied the fabrication self aligned atmospheric pressure(AP) CVD a-Si thin film transistor with source-drain ohmic contact by using ion shower doping method. The conductivity is 6*10$^{-2}$S/cm when the acceleration voltage, doping time and doping temperature are 6kV, 90s and 350.deg. C, respectively. We obtained the field effect mobility of 1.3cm$^{2}$/Vs and the threshold voltage of 7V.

• Transactions on Electrical and Electronic Materials
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• 제17권5호
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• pp.270-274
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• 2016

This article investigates the use of the Gaussian-channel doping profile for the control of the short-channel effects in the double-gate MOSFET whereby a two-dimensional (2D) quantum simulation was used. The simulations were completed through a self-consistent solving of the 2D Poisson equation and the Schrodinger equation within the non-equilibrium Green’s function (NEGF) formalism. The impacts of the p-type-channel Gaussian-doping profile parameters such as the peak doping concentration and the straggle parameter were studied in terms of the drain current, on-current, off-current, sub-threshold swing (SS), and drain-induced barrier lowering (DIBL). The simulation results show that the short-channel effects were improved in correspondence with incremental changes of the straggle parameter and the peak doping concentration.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.5-5
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• 2008

We design and demonstrate the controled doping into ZnO nanowires (NWs) adopting self-contrived hot-walled pulsed laser deposition (HW-PLD). Optimized synthesis conditions with the diversified dopants guarantee the excellent crystalinity and morphology as well as electrical properties of the NWs. Proprietary target rotating system in the HW-PLD fuels the controlled formation and doping of the NWs. Prepared NWs sensitive to the environment are systematically characterized, and the doping mechanism is discussed.

• 대한전자공학회논문지
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• 제25권11호
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• pp.1286-1293
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• 1988

자기정렬 DMOS 트랜지스터의 채널 길이에 관한 수식을 2차원적인 Caussian 농도분포식으로부터 유도하였다. 본 논문에서는 제시된 채널 길이에 관한 수식은 기판의 농도, 이중확산된 각 영역의 표면 농도와 수직 접합 깊이의 함수로 이루어져 있으며, 계산된 실험치와 잘 일치하고 있다. 또한 고전압용 DMOS 트랜지스터에서 채널 punchthrough를 억제할 수 있는 최소 채널 길이를 채널영역의 평균농도를 이용하여 계산하였으며 소자 simulation을 통하여 최적의 채널 조건(채널농도분포 및 채널 길이)를 예측할 수 있음을 확인하였다.

• 대한전기학회논문지
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• 제36권7호
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• pp.462-469
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• 1987

A metal gate MOSFET with source/drain regions self-aligned to gate region is proposed. The proposed MOS transistor is fabricated by utilizing the higher oxidation rate of source/drain regions with high doping concentration when compared with channel region with moderate doping. The thick oxide on the source/drain regions reduces the gate and drain(source) overlap capacitance down to that of a self-aligned polysilicon gate device while allowing the use of a metal gate with much lower resistivity than the more commonly used polycrystalline silicon. A ring oscillator composed of 15 inverter stages has been computer simulated using SPICE. The results of the simulation show good agreement with experimental measurement confirming the fast switching speed of propesed MOSFET.

• JSTS:Journal of Semiconductor Technology and Science
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• 제6권1호
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• pp.43-51
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• 2006

80-nm self-aligned n-and p-channel I-MOS devices were demonstrated by using a novel fabrication method featuring double sidewall spacer, elevated drain structure and RTA process. The fabricated devices showed a normal transistor operation with extremely small subthreshold swing less than 12.2 mV/dec at room temperature. The n- and p-channel I-MOS devices had an ON/OFF current of 394.1/0.3 ${\mu}A$ and 355.4/8.9 ${\mu}A$ per ${\mu}m$, respectively. We also investigated some critical issues in device design such as the junction depth of the source extension region and the substrate doping concentration.

• 한국전기전자재료학회논문지
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• 제20권1호
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• pp.14-18
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• 2007

The electric property in the $GaAs-Al_{x}Ga_{1-x}$ quantum well with the Si ${\delta}-doping$ layer in a non-central position is studied through the effect of the electric field intensity on the electron distribution. The finite difference method is used for the calculation of the subband energy level and its wavefunction. In order to account for the change of the potential energy due to the charged particles, the self consistent method is employed. As the Si ${\delta}-doping$ layer becomes closer to the heterojunction interface, the electrons less affected by Coulomb scattering are greatly increased under the external electric field. Therefore, the high speed device is suggested due to the fact that the high mobility electrons can be increased by positioning the ${\delta}-doping$ layer in the quantum well and by applying the electric field intensity.

• 한국체육학회지인문사회과학편
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• 제55권2호
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• pp.11-22
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• 2016

루만의 체계이론에 입각해서 기존의 반-도핑 커뮤니케이션을 분석한 결과 다음과 같은 결론에 도달하였다. 기존의 반-도핑 커뮤니케이션은 도핑의 원인과 책임을 개인에게 귀속시키는 개인화 전략을 구사하고 있다. 따라서 문제 해결 방법도 적발, 처벌, 교육을 통한 계몽 같이 철저하게 선수나 지도자 같은 개인에게 초점을 맞추고 있다. 이와 같은 전략은 스포츠체계와 그 주변 체계들의 이해관계가 거미줄처럼 복잡하게 얽혀져 생겨나는 도핑현상을 개인의 자유의지에 따른 결정의 결과로 단순화시킬 뿐만 아니라, 스포츠 및 주변체계들의 성찰 기회를 차단함으로써 체계 내부의 구조적 문제를 은폐시키는데 기여하고, 선수나 트레이너 같은 개별 행위자에게 받아들여지기 어려운 무리한 요구를 부과함으로써 도핑방지노력이 실효를 거둘 수 없게 만든다. 도핑 퇴치 노력이 효력을 발휘하기 위해서는 주체 중심 차원을 넘어서 스포츠조직과 사회적 기능체계들의 차원에서 전략을 구상하고 실행해야 한다.