Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)
- Volume 32A Issue 1
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- Pages.146-151
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- 1995
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- 1016-135X(pISSN)
Fabrication of self aligned APCVD A-Si TFT by using ion shower doping method
이온 샤우어 도핑을 이용한 자기정렬방식의 APCVD 비정질 실리콘 박막 트랜지스터의 제작
- Moon, Byeong-Yeon (Dept. of Physics Kyung Hee Univ.) ;
- Lee, Kyung-Ha (Dept. of Physics Kyung Hee Univ.) ;
- Jung, You-Chan (Dept. of Physics Kyung Hee Univ.) ;
- Yoo, Jae-Ho (Dept. of Physics Kyung Hee Univ.) ;
- Lee, Seung-Min (Dept. of Physics Kyung Hee Univ.) ;
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Jang, Jin
(Dept. of Physics Kyung Hee Univ.)
- 문병연 (경희대학교 물리학과) ;
- 이경하 (경희대학교 물리학과) ;
- 정유찬 (경희대학교 물리학과) ;
- 유재호 (경희대학교 물리학과) ;
- 이승민 (경희대학교 물리학과) ;
-
장진
(경희대학교 물리학과)
- Published : 1995.01.01
Abstract
We have studied the fabrication self aligned atmospheric pressure(AP) CVD a-Si thin film transistor with source-drain ohmic contact by using ion shower doping method. The conductivity is 6*10
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