• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.603-603
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• 2012

최근에 전면 emitter의 doping profile이 다른 selective emitter solar cell은 실제 제작시단파장 영역에서 많은 gain을 얻을 수 없어 LBC 구조의 태양전지에 관한 연구가 많이 진행되고 있다. 본 연구는 TCAD simulation을 이용하여 후면에 형성되는 locally doped BSF(p++) region의 doping profile의 변화에 따른 태양전지 특성에 관한 연구이다. Al으로 형성되는 local back contact의 doping depth 및 surface concentration에 따른 전기적, 광학적 분석을 통해 주도적인 인자를 분석하고 최적화하였다. 특히 doping depth에 따른 변화보다는 surface concentration의 변화에 따른 특성변화가 주도적으로 나타났다.

• 한국표면공학회지
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• 제47권5호
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• pp.227-232
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• 2014

In this study, we propose the application of doping process technology for atmospheric pressure plasma. The plasma treatment means the wafer is warmed via resistance heating from current paths. These paths are induced by the surface charge density in the presence of illuminating Argon atmospheric plasmas. Furthermore, it is investigated on the high-concentration doping to a selective partial region in P type solar cell wafer. It is identified that diffusion of impurities is related to the wafer temperature. For the fixed plasma treatment time, plasma currents were set with 40, 70, 120 mA. For the processing time, IR(Infra-Red) images are analyzed via a camera dependent on the temperature of the P type wafer. Phosphorus concentrations are also analyzed through SIMS profiles from doped wafer. According to the analysis for doping process, as applied plasma currents increase, so the doping depth becomes deeper. As the junction depth is deeper, so the surface resistance is to be lowered. In addition, the surface charge density has a tendency inversely proportional to the initial phosphorus concentration. Overall, when the plasma current increases, then it becomes higher temperatures in wafer. It is shown that the diffusion of the impurity is critically dependent on the temperature of wafers.

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2011년도 춘계학술발표대회 논문집
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• pp.101-104
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• 2011

Many studies in crystalline silicon solar cell fabrication have been focused on high efficiency and low cost. In this paper, we carried out the doping procedure by varying the silicon wafer thicknesses and sheet resistance. The silicon wafers with various thicknesses were obtained by shiny etching and texturing. The thicknesses of wafers were 100, 120, 150, and $180{\mu}m$. The emitter layer formed by $POCl_3$ doping process had sheet resistance with 40 and $80{\Omega}/sq$ for selective emitter application. This experiment indicated wafer thickness did not influence sheet resistance but lifetime was strongly effected.

• Journal of Industrial and Engineering Chemistry
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• 제68권
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• pp.180-186
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• 2018

We report the discovery of Li-rich $Li_{1+x}[(Ni_{0.225}Co_{0.15}Mn_{0.625})_{1-y}V_y]O_2$ as a cathode material for rechargeable lithium-ion batteries in which a small amount of tetravalent vanadium ($V^{4+}$) is selectively and completely incorporated into the manganese sites in the lattice structure. The unwanted oxidation of vanadium to form a $V_2O_5-like$ secondary phase during high-temperature crystallization is prevented by uniformly dispersing the vanadium ions in coprecipitated $[(Ni_{0.225}Co_{0.15}Mn_{0.625})_{1-y}V_y](OH)_2$ particles. Upon doping with $V^{4+}$ ions, the initial discharge capacity (>$275mA\;h\;g^{-1}$), capacity retention, and voltage decay characteristics of the Li-rich layered oxides are improved significantly in comparison with those of the conventional undoped counterpart.

• Current Photovoltaic Research
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• 제2권3호
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• pp.120-123
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• 2014

Thermal doping method using furnace is generally used for solar-cell wafer doping. It takes a lot of time and high cost and use toxic gas. Generally selective emitter doping using laser, but laser is very high equipment and induce the wafer's structure damage. In this study, we apply atmospheric pressure plasma for solar-cell wafer doping. We fabricated that the atmospheric pressure plasma jet injected Ar gas is inputted a low frequency (1 kHz ~ 100 kHz). We used shallow doping wafers existing PSG (Phosphorus Silicate Glass) on the shallow doping CZ P-type wafer (120 ohm/square). SIMS (Secondary Ion Mass Spectroscopy) are used for measuring wafer doping depth and concentration of phosphorus. We check that wafer's surface is not changed after plasma doping and atmospheric pressure doping width is broaden by increase of plasma treatment time and current.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2007년도 추계학술발표대회 및
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• pp.154.1-154.1
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• 2007

• 한국재료학회:학술대회논문집
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• 한국재료학회 1993년도 추계 학술발표 강연 및 논문 개요집
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• pp.18-18
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• 1993

• 한국재료학회지
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• 제19권5호
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• pp.240-244
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• 2009

Simple and high efficiency green phosphorescent devices using an intermixed double host of 4, 4', 4"-tris(N-carbazolyl) triphenylamine [TCTA], 1, 3, 5-tris (N-phenylbenzimiazole-2-yl) benzene [TPBI], phosphorescent dye of tris(2-phenylpyridine)iridium(III) [$Ir(ppy)_3$], and selective doping in the TPBI region were fabricated, and their electro luminescent characteristics were evaluated. In the device fabrication, layers of $70{\AA}$-TCTA/$90{\AA}$-$TCTA_[0.5}TPBI_{0.5}$/$90{\AA}$-TPBI doped with $Ir(ppy)_3$ of 8% and an undoped layer of $50{\AA}$-TPBI were successively deposited to form an emission region, and SFC137 [proprietary electron transporting material] with three different thicknesses of $300{\AA}$, $500{\AA}$, and $700{\AA}$ were used as an electron transport layer. The device with $500{\AA}$-SFC137 showed the luminance of $48,300\;cd/m^2$ at an applied voltage of 10 V, and a maximum current efficiency of 57 cd/A under a luminance of $230\;cd/m^2$. The peak wavelength in the electroluminescent spectral and color coordinates on the Commission Internationale de I'Eclairage [CIE] chart were 512 nm and (0.31, 0.62), respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.357-357
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• 2012

The doping process of the solar cell has been used by furnace or laser. But these equipment are so expensive as well as those need high maintenance costs and production costs. The atmospheric pressure plasma doping process can enable to the cost reduction. Moreover the atmospheric pressure plasma can do the selective doping, this means is that the atmospheric pressure plasma regulates the junction depth and doping concentration. In this study, we analysis the atmospheric pressure plasma doping compared to the conventional furnace doping. the single crystal silicon wafer doped with dopant forms a P-N junction by using the atmospheric pressure plasma. We use a P type wafer and it is doped by controlling the plasma process time and concentration of dopant and plasma intensity. We measure the wafer's doping concentration and depth by using Secondary Ion Mass Spectrometry (SIMS), and we use the Hall measurement because of investigating the carrier concentration and sheet resistance. We also analysis the composed element of the surface structure by using X-ray photoelectron spectroscopy (XPS), and we confirm the structure of the doped section by using Scanning electron microscope (SEM), we also generally grasp the carrier life time through using microwave detected photoconductive decay (u-PCD). As the result of experiment, we confirm that the electrical character of the atmospheric pressure plasma doping is similar with the electrical character of the conventional furnace doping.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2000년도 춘계총회,특별강연,심포지움,연구발표회
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• pp.74.2-74.2
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• 2000