• Title/Summary/Keyword: Se Deposition

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Effect of Pycnogenol on Skin Wound Healing

  • Jeong, Moon-Jin;Jeong, Soon-Jeong;Lee, Soo-Han;Kim, Young-Soo;Choi, Baik-Dong;Kim, Seung-Hyun;Go, Ara;Kim, Se Eun;Kang, Seong-Soo;Moon, Chang-Jong;Kim, Jong-Choon;Kim, Sung-Ho;Bae, Chun-Sik
    • Applied Microscopy
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    • v.43 no.4
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    • pp.133-139
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    • 2013
  • This study was carried out to investigate the effects of pycnogenol (PYC) on the cutaneous wound healing of the mice. The wounds were extracted on days 1, 3, 5, and 7 post-injury for histomorphometrical analysis including wound area, infiltrating inflammatory cells, wound contracture including collagen deposition. As the result, the wound area of PYC-treated group was larger than the control group on days 1 to 7. Inflammatory cells in the PYC-treated wounds were decreased at day 1 compared to the control wound tissue. From day 3 to 7, there was no significant difference between the control and the PYC-treated skin wounds. Though the degree of contraction in the PYC-treated group was lower than that of the control group from days 1 to 5, but appeared significantly higher on day 7. Compared to the control group, collagen accumulation in the PYC-treated group was higher than that of the control group from days 5 to 7. From this result, it may support the possibility that PYC would be useful agent for early inflammatory response and matrix remodeling phase of the skin wounds.

Distribution of Scuticociliates Infiltrated into the Internal Tissues and Organs of Tiger Puffer, Takifugu rubripes (자주복, Takifugu rubripes의 내부조직과 기관에 침투한 스쿠티카섬모충의 분포)

  • Kang, Bub-Se;Go, Hwan-Bong;Kim, Sung-Jun;Na, Oh-Soo;Lee, Chi-Hoon;Kim, Sam-Yeon;Lee, Je-Hee;Lee, Young-Don
    • Journal of fish pathology
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    • v.18 no.1
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    • pp.99-103
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    • 2005
  • This study investigated the distribution of scuticociliates in the intestine, spleen, kidney, testis, brain, pericondrial bone and muscle layer of the tiger puffer, Takifugu rubripes, infected with scuticociliates. Scuticociliates were infiltrated in the connective tissues of the outer layer of the intestine, spleen, kidney, testis, brain, pericondrial bone and muscle layer. In brain, membranous tissue and optic lobe cortex separation were accompanied by the infection of scuticociliates. Other internal tissues and organs did not show any lesions expect for heavy deposition of hemosiderin in spleen.

Effects Amyloid Beta Peptide on the Inflammatory Response in Neuronal Cells (베타아밀로이드가 신경세포에 미치는 염증 작용 연구)

  • Jang, Seon-A;Koo, Hyun Jung;Kang, Se Chan;Sohn, Eun-Hwa;Namkoong, Seung
    • KSBB Journal
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    • v.28 no.4
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    • pp.230-237
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    • 2013
  • Amyloid ${\beta}$ peptide (A${\beta}$) still best known as a molecule to cause Alzheimer's disease (AD). AD is characterized by the accumulation and deposition of A${\beta}$ within the brain, leading to neuronal cell loss and perturbation of synaptic function by causing free radical formation, inflammation and apoptosis. We investigated the inflammatory action of A${\beta}$ on two types of brain cells, neuronal cells (SH-SY5Y) and neuroglia cells (C6), and its mechanism. We measured the production of NO-iNOS, TNF-${\alpha}$, and ICAM-1 using RT-PCR and Western blot analysis less than the concentration of cytotoxic effects (> 70% survivability). A${\beta}$ had no effect on the production of NO and TNF-${\alpha}$, but significantly increases of iNOS and ICAM-1. Based on this, we suggest that the inflammatory effect of A${\beta}$ results from the action of ICAM-1 in neuronal cells, rather than the release of inflammatory mediators such as NO and TNF-${\alpha}$ in neuroglia cells. In addition, we confirmed whether p53 was related to the action of A${\beta}$ by using SH-SY5Y ($p53^{-/-}$) dominant cells. Neither the expression of p53 nor the cytotoxicity of SH-SY5Y ($p53^{-/-}$) cells were directly affected by A${\beta}$. However, ICAM-1 was not expressed in SH-SY5Y ($p53^{-/-}$) cells. This means that p53- independent pathway exists in the expression of ICAM-1 by A${\beta}$ while p53 plays a role as an on-and-off switch.

CdTe기반의 엑스선 검출기의 표면 구조에 따른 박막의 전기적 특성평가

  • Kim, Dae-Guk;Sin, Jeong-Uk;Lee, Yeong-Gyu;Lee, Ji-Yun;No, Seong-Jin;Park, Seong-Gwang;Nam, Sang-Hui
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.432-432
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    • 2013
  • 현대에 이르러 직접방식 엑스선 검출기에서는 기존의 a-Se을 주로 이용하였지만, 고전압 인가에 따른 회로 손상과 짧은 수명, 그리고 누설전류에 따른 안전의 문제 등으로 낮은 에너지 밴드갭과 높은 흡수효율, 비저항 등에 의거한 다양한 대체 물질에 대한 연구가 활발하게 이루어져가고 있다. 본 논문에서는 직접방식 엑스선 검출물질로 전기이동도와 흡수효율이 뛰어나고, 밴드갭이 낮아 태양전지분야 뿐만 아니라 최근 엑스선 검출물질로 각광받고 있는 CdTe를 선정하였다. 연구의 목적은 PVD (Physical Vapor Deposition)방식의 CdTe 검출 물질의 제작과정에서 CdTe가 기화되어 하부전극 기판에 증착될 시, 하부전극 기판 온도에 따른 CdTe의 박막형성과 전기적 측정을 실시하여 그에 따른 최적의 증착조건을 선정하는 것이다. 하부전극 기판으로는 Au/glass를 사용하였으며 증착 시, $200^{\circ}C$, $300^{\circ}C$, $400^{\circ}C$로 나누어 특성을 평가하였다. 시료는 파우더형태의 다결정CdTe를 120 g를 사용하여 증착완료 시, 약 $100{\mu}m$의 박막두께를 구현하였다. PVD증착의 조건으로는 Mo재질의 보트를 사용하였으며, 증착 시 진공도는 $5{\times}10^{-6}$ Torr, 보트온도는 약 $350^{\circ}C$ 소요시간은 5시간이었다. 증착이 완료된 CdTe의 표면구조와 전기적 특성평가를 위해 SEM촬영을 실시하였고, 전기적 특성 평가를 위해 CdTe표면에 Au를 PVD방식으로 증착하였다. 실험 결과 SEM촬영을 이용한 표면특성에서는 하부전극 기판의 온도가 높아질수록 표면 결정입자가 증가하는 것을 확인할 수 있었으며, 전기적 특성에서도 하부전극 기판의 온도가 증가할수록 RQA-5 조건의 70 kVp, 100 mA, 0.03 sec 엑스선에 대한 우수한 민감도와 암전류 값을 확인하였다. 이러한 결과는 증착과정에서 온도에 따른 다결정 CdTe의 표면결정 크기 증가는 동일한 면적에서 표면결정 수의 감소를 뜻한다. 이는 결정간의 경계에서 트랩 되어지는 전자가 감소하고, 전자의 이동도 또한 높은 효율을 나타냄을 확인할 수 있었다. 따라서 본 연구를 통하여 CdTe기반의 직접방식 엑스선 검출기 제작과정에서 증착 시 하부전극기판 온도가 증가할수록 결정의 크기가 증가하여 최적의 전기적 특성을 나타냄을 검증할 수 있었다.

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High-Contrast Electrochromism of Porous Tungsten Oxide Thin Films Prepared by Electrodeposition (전기증착법으로 제조된 다공성 텅스텐 산화물의 고대비 전기변색 특성)

  • Park, Sung-Hyeok;Mo, Ho-Jin;Lim, Jae-Keun;Kim, Sang-Gwon;Choi, Jae-Hyo;Lee, Seung-Hyun;Jang, Se-Hwa;Cha, Kyung-Ho;Nah, Yoon-Chae
    • Journal of Powder Materials
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    • v.25 no.1
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    • pp.7-11
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    • 2018
  • In this study, we synthesize tungsten oxide thin films by electrodeposition and characterize their electrochromic properties. Depending on the deposition modes, compact and porous tungsten oxide films are fabricated on a transparent indium tin oxide (ITO) substrate. The morphology and crystal structure of the electrodeposited tungsten oxide thin films are investigated by scanning electron microscopy (SEM) and X-ray diffraction (XRD). X-ray photoelectron spectroscopy is employed to verify the chemical composition and the oxidation state of the films. Compared to the compact tungsten oxides, the porous films show superior electrochemical activities with higher reversibility during electrochemical reactions. Furthermore, they exhibit very high color contrast (97.0%) and switching speed (3.1 and 3.2 s). The outstanding electrochromic performances of the porous tungsten oxide thin films are mainly attributed to the porous structure, which facilitates ion intercalation/deintercalation during electrochemical reactions.

Formation of Metal Electrode on Si3N4 Substrate by Electrochemical Technique (전기화학 공정을 이용한 질화규소 기판 상의 금속 전극 형성에 관한 연구)

  • Shin, Sung-Chul;Kim, Ji-Won;Kwon, Se-Hun;Lim, Jae-Hong
    • Journal of the Korean institute of surface engineering
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    • v.49 no.6
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    • pp.530-538
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    • 2016
  • There is a close relationship between the performance and the heat generation of the electronic device. Heat generation causes a significant degradation of the durability and/or efficiency of the device. It is necessary to have an effective method to release the generated heat. Based on demands of the printed circuit board (PCB) manufacturing, it is necessary to develop a robust and reliable plating technique for substrates with high thermal conductivity, such as alumina ($Al_2O_3$), aluminium nitride (AlN), and silicon nitride ($Si_3N_4$). In this study, the plating of metal layers on an insulating silicon nitride ($Si_3N_4$) ceramic substrate was developed. We formed a Pd-$TiO_2$ adhesion layer and used APTES(3-Aminopropyltriethoxysilane) to form OH groups on the surface and adhere the metal layer on the insulating $Si_3N_4$ substrate. We used an electroless Ni plating without sensitization/activation process, as Pd particles were nucleated on the $TiO_2$ layer. The electrical resistivity of Ni and Cu layers is $7.27{\times}10^{-5}$ and $1.32{\times}10^{-6}ohm-cm$ by 4 point prober, respectively. The adhesion strength is 2.506 N by scratch test.

Ultralow-n SiO2 Thin Films Synthesized Using Organic Nanoparticles Template

  • Dung, Mai Xuan;Lee, June-Key;Soun, Woo-Sik;Jeong, Hyun-Dam
    • Bulletin of the Korean Chemical Society
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    • v.31 no.12
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    • pp.3593-3599
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    • 2010
  • In an original effort, this lab attempted to employ polystyrene nanoparticles as a template for the synthesis of ordered and highly porous macroporous $SiO_2$ thin films, utilizing their high combustion temperature and narrow size distribution. However, polystyrene nanoparticle thin films were not obtained due to the low interaction between individual particles and between the particle and silicon substrate. However, polystyrene-polyacrylic acid (PS-AA) colloidal particles of a core-shell structure were synthesized by a one-pot miniemulsion polymerization approach, with hydrophilic polyacrylic acid tails on the particle surface that improved interaction between individual particles and between the particle and silicon substrate. The PS-AA thin films were spin-coated in the thickness ranges from monolayer to approximately $1.0\;{\mu}m$. Using the PS-AA thin films as sacrificial templates, macroporous $SiO_2$ thin films were successfully synthesized by vapor deposition or conventional solution sol-gel infiltration methods. Inspection with field emission scanning electron microscopy (FE-SEM) showed that the macroporous $SiO_2$ thin films consist of interconnected air balls (~100 nm). Typical macroporous $SiO_2$ thin films showed ultralow refractive indices ranging from 1.098 to 1.138 at 633 nm, according to the infiltration conditions, which were confirmed by spectroscopy ellipsometry (SE) measurements. This research shows how the synthetic control of the macromolecule such as hydrophilic polystyrene nanopaticles and silicate sol precursors innovates the optical properties and processabilities for actual applications.

Coatings Properties and Efficiency Performance of Cr-DLC Films Deposited by Hybrid Linear Ion Source for Hydraulic Gear Pump (하이브리드 선형이온원에 의한 유압 기어펌프용 Cr-DLC코팅막의 특성과 효율성능)

  • Cha, Sun-Yong;Kim, Wang-Ryeol;Park, Min-Suk;Kwon, Se-Hun;Chung, Won-Sub;Kang, Myung-Chang
    • Journal of Powder Materials
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    • v.17 no.6
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    • pp.456-463
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    • 2010
  • This paper describes the results of the application of Cr-Diamond-like carbon (DLC) films for efficiency improvement through surface modification of spur gear parts in the hydraulic gear pump. Cr-DLC films were successfully deposited on SCM 415 substrates by a hybrid coating process using linear ion source (LIS) and magnetron sputtering method. The characteristics of the films were systematically investigated using FE-SEM, nano-indentation, sliding tester and AFM instrument. The microstructure of Cr-DLC films turned into the dense and fine grains with relatively preferred orientation. The thickness formed in our Cr buffer layer and DLC coating layer were obtained the 487 nm and $1.14\;{\mu}m$. The average friction coefficient of Cr-DLC films considerably decreased to 0.15 for 0.50 of uncoated SCM415 material. The hardness and surface roughness of Cr-DLC films were measured 20 GPa and 10.76 nm, respectively. And then, efficiency tests were performed on the hydraulic gear pump to investigate the efficiency performance of the Cr-DLC coated spur gear. The experimental results show that the volumetric and mechanical efficiency of hydraulic gear pump using the Cr-DLC spur gear were improved up to 2~5% and better efficiency improvement could be attributed to its excellent microstructure, higher hardness, and lower friction coefficient. This conclusion proves the feasibility in the efficiency improvement of hydraulic gear pump for industrial applications.

Pressure sensor using shear piezoresistance of polysilicon films (폴리실리콘의 전단 압저항현상을 이용한 압력센서)

  • Park, Sung-June;Park, Se-Kwang
    • Journal of Sensor Science and Technology
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    • v.5 no.5
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    • pp.31-37
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    • 1996
  • This paper presents characteristics of pressure sensor using shear-type piezoresistor of LPCVD(low pressure chemical vapour deposition) grown polycrystalline silicon films. The sensor has 3.1mV/V of pressure sensitivity in the pressure range of $1kgf/cm^{2}$, ${\pm}0.012%FS/^{\circ}C$ of TCO, and ${\pm}0.08%FS/^{\circ}C$ of TCS in the temperature range of $-20{\sim}+125^{\circ}C$. It showed ${\pm}0.2%FS$ of hysteresis and ${\pm}1.5%FS$ of non-linearity. Shear-type polycrystalline silicon pressure sensor can eliminate temperature dependence of offset caused by resistors mismatch and be used in relatively wide temperature range, compared to the conventional full-bridge silicon pressure sensors.

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Study of multi-stacked InAs quantum dot infrared photodetector grown by metal organic chemical vapor deposition

  • Kim, Jeong-Seop;Ha, Seung-Gyu;Yang, Chang-Jae;Lee, Jae-Yeol;Park, Se-Hun;Choe, Won-Jun;Yun, Ui-Jun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.129-129
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    • 2010
  • 적외선 검출소자(Infrared Photodetector)는 근적외선에서 원적외선 영역에 이르는 광범위한 파장 범위의 적외선을 이용하는 기기로서 대상물이 방사하는 적외선 영역의 에너지를 흡수하여 이를 영상화할 수 있는 장비이다. 적외선 관련 기술은 2차 세계대전 기간에 태동하였으며, 현재에는 원거리 감지기술 등과 접목되면서 그 활용 분야가 다양해지고 있다. 특히 능동형 정밀 타격무기를 비롯한 감시 정찰 장비 및 지능형 전투 장비 시스템 등에 대한 요구를 바탕으로 보다 정밀하고 신속한 표적 감지 및 정보처리 기술에 관한 연구가 선진국을 통해서 활발히 진행되고 있다. 기존의 Bolometer 형식의 열 감지 소자는 반응 속도가 느리고 측정 감도가 낮은 단점이 있으며, MCT(HgCdTe)를 이용한 적외선 검출기의 경우 높은 기계적 결함과 77K 저온에서 동작해야하기 때문에 발생하는 추가 비용 등이 문제점으로 지적되고 있다[1]. 이에 반해 화합물 반도체 자기조립 양자점(self-assembled quantum dot)을 이용한 적외선 수광소자는 양자점이 가지는 불연속적인 내부 에너지 준위로 인하여, 높은 내부 양자 효율과 온도 안정성을 기대할 수 있으며, 고성능, 고속처리, 저소비전력 및 저소음의 실현이 가능하다. 본 연구에서는 적층 InAs/InGaAs dot-in-a-well 구조를 유기금속화학기상증착법을 이용하여 성장하고 이를 소자에 응용하였다. 균일한 적층 양자점의 성장을 위해서 원자현미경(atomic force microscopy)을 이용하여, 각 층의 양자점의 크기와 밀도를 관찰하였고, photoluminescence (PL)를 이용하여 발광특성을 연구하였다. 각 층간의 GaAs space layer의 두께와 온도 조절 과정을 조절함으로써 균일한 적층 양자점 구조를 얻을 수 있었다. 이를 이용하여 양자점의 전도대 내부의 에너지 준위간 천이(intersubband transition)를 이용하는 n-type GaAs/intrinsic InAs 양자점/n-type GaAs 구조의 양자점 적외선수광소자 구조를 성장하였다. 이 과정에서 상부 n-type GaAs의 성장 온도가 600도 이상이 되는 경우 발광효율이 급격히 감소하고, 암전류가 크게 증가하는 것을 관찰하였다. 이는 InAs 양자점과 주변 GaAs 간의 열에 의한 상호 확산에 의하여 양자점의 전자 구속 효과를 저해하는 것으로 설명된다.

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