Journal of Sensor Science and Technology (센서학회지)
- Volume 5 Issue 5
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- Pages.31-37
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- 1996
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- 1225-5475(pISSN)
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- 2093-7563(eISSN)
Pressure sensor using shear piezoresistance of polysilicon films
폴리실리콘의 전단 압저항현상을 이용한 압력센서
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Park, Sung-June
(Department of electrical engineering, Graduate School, Kyungpook National University) ;
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Park, Se-Kwang
(Department of electrical engineering, Engineering college, Kyungpook National University)
- Published : 1996.09.30
Abstract
This paper presents characteristics of pressure sensor using shear-type piezoresistor of LPCVD(low pressure chemical vapour deposition) grown polycrystalline silicon films. The sensor has 3.1mV/V of pressure sensitivity in the pressure range of
본 연구에서는 LPCVD(저압화학기상증착)로 형성된 폴리실리콘의 전단 압저항 효과를 이론적으로 분석하고, 전단 압저항체를 응용한 압력센서를 설계 제작하여 그 특성을 연구하였다. 제작된 센서는
Keywords