• The Journal of the Korea institute of electronic communication sciences
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• v.18 no.2
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• pp.291-298
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• 2023

SRAM-based in-memory computing is one of the technologies to solve the bottleneck of von Neumann architecture. In order to achieve SRAM-based in-memory computing, it is essential to design efficient SRAM bit-cell. In this paper, we propose a low-power differential sensing 8+T SRAM bit-cell which reduces power consumption and improves circuit performance. The proposed 8+T SRAM bit-cell is applied to ripple carry adder which performs SRAM read and bitwise operations simultaneously and executes each logic operation in parallel. Compared to the previous work, the designed 8+T SRAM-based ripple carry adder is reduced power consumption by 11.53%, but increased propagation delay time by 6.36%. Also, this adder is reduced power-delay-product (PDP) by 5.90% and increased energy-delay- product (EDP) by 0.08%. The proposed circuit was designed using TSMC 65nm CMOS process, and its feasibility was verified through SPECTRE simulation.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.3
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• pp.601-606
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• 2017

SRAM-based FPGAs mainly used to develop and implement high-performance circuits have SRAM-type configuration memory. Soft errors in memory devices are the main threat from a reliability point of view. Soft errors occurring in the configuration memory of FPGAs cause FPGAs to malfunction. SEM(Soft Error Mitigation) Controllers offered by Xilinx can mitigate the influence of soft errors in configuration memory. SEM Controllers use ECC(Error Correction Code) and CRC(Cyclic Redundancy Code) which are placed around the configuration memory to detect and correct the errors. The correction is done through a partial reconfiguration process. This paper presents the availability analysis of SRAM-based FPGAs against soft errors under the protection of SEM Controllers. Availability functions were derived and compared according to the correction capability of SEM Controllers of several different families of FPGAs. The result may help select an SRAM-based FPGA part and estimate the availability of FPGAs running in an environment where soft errors occur.

• Nuclear Engineering and Technology
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• v.56 no.8
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• pp.2916-2922
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• 2024

\\In memory semiconductors such as a static random access memory (SRAM), a common problem is soft errors under radiation environment. These soft errors cause bit flips, which are referred to as single event upsets (SEUs). Some radiation-hardened SRAM cells such as a Quatro SRAM, we-Quatro SRAM, and DICE SRAM cells have been reported for years. However, these designs have the disadvantage of taking up more area than a conventional 6T SRAM cell. Thus, we propose a radiation-hardened SRAM cell design that we named capacitor-static random access memory (C-SRAM) without area overhead. The C-SRAM is formed by simply adding a capacitor to the conventional 6T SRAM. It was designed to mitigate the radiation effect using the conservation law of electrical charge. Moreover, it has the same cell size as the conventional 6T SRAM cell. Its static noise margins (SNMs), which are indicators of operational stability, are equal to the conventional 6T SRAM values of 530 mV, 220 mV, and 860 mV in hold, read, and write modes, respectively. The results of the SEU simulation test showed that it had 4.761 times better flipping tolerance than the conventional 6T SRAM with a charge value of 247.494 fC. In addition, irradiation experiments also confirmed that the C-SRAM cell was more tolerant than the 6T SRAM cell. The conventional 6T SRAM and C-SRAM were fabricated using a standard 0.18 ㎛ CMOS process.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.2 s.332
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• pp.57-64
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• 2005

In this paper, we develop the common CAD tool that creates the automatically BIST IP by user settings for the convenient test of embedded memory. Previous tools have defect that when memory model is changed, BIST IP must re-designed depending on memory model because existing tools is limited the widely used algorithms. We develop the tool that is created automatic BIST IP. It applies the algorithm according to the memory model which user requests We usually use the multi-port asynchronous SRAM needless to refresh as the embedded memory. However, This work researches on the dual-port SRAM.

• Journal of Advanced Navigation Technology
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• v.15 no.6
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• pp.1104-1110
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• 2011

The conventional semiconductor equipment has adopted SRAM module as the test pattern memory, which has a simple design and does not require refreshing. However, SRAM has its disadvantages as it takes up more space as its capacity becomes larger, making it difficult to meet the requirements of large memories and compact size. if DRAM is adopted as the semiconductor inspection equipment, it takes up less space and costs less than SRAM. However, DRAM is also disadvantageous because it requires the memory cell refresh, which is not suitable for the semiconductor examination equipments that require correct timing. Therefore, In this paper, we will proposed an algorithm for punctuality guarantee of memory-free inspection equipment using DDR2 SDRAM. And we will Developed memory controller using punctuality guarantee algorithm. As the results, show that when we adopt the DDR2 SDRAM, we can get the benefits of saving 13.5 times and 5.3 times in cost and space, respectively, compared to the SRAM.

• IEMEK Journal of Embedded Systems and Applications
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• v.13 no.3
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• pp.125-131
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• 2018

STT-RAM is attracting as a next generation Non-volatile memory for replacing cache memory with low leakage energy, high integration and memory access performance similar to SRAM. However, there is problem of write operations as the other Non_volatile memory. Hybrid cache memory using SRAM and STT-RAM is attracting attention as a cache memory structure with lowe power consumption. Despite this, reducing the leakage energy consumption by the STT-RAM is still lacking access to the Dynamic energy. In this paper, we proposed as energy management method such as a way-selection approach for hybrid L2 cache fo SRAM and STT-RAM and memory selection method of write/read operation. According to the simulation results, the proposed hybrid cache memory reduced the average energy consumption by 40% on SPEC CPU 2006, compared with SRAM cache memory.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.11
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• pp.117-123
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• 2013

By exploiting the regular read and write access patterns of embedded SRAM memories inside Viterbi decoder, the memory architecture can be efficiently modified to reduce the power consumption of write operation. According to the experimental results with 65nm CMOS process, the proposed embedded memory used for Viterbi decoder achieves 30.84% of power savings with 8.92% of area overhead compared to the conventional embedded SRAM approaches.

• Proceedings of the Korea Information Processing Society Conference
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• 2013.05a
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• pp.21-23
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• 2013

Static Random Access Memory (SRAM) using CMOS technology has many advantages. It does not need to refresh every certain time, as a result, the speed of SRAM is faster than Dynamic Random Access Memory (DRAM). This is the reason why SRAM is widely used in almost processors and system on chips (SoC) which require high processing speed. Two basic operations of SRAM are read and write. We consider two basic factors, including the accuracy of read and write operations and the speed of these operations. In our paper, we propose the read and write assist circuits for SRAM. By adding a power control circuit in SRAM, the write operation performed successfully with low error ratio. Moreover, the value in memory cells can be read correctly using the proposed pre-charge method.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.8
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• pp.93-98
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• 2004

A low power SRAM using elevated source level memory cells is proposed to save the write power of SRAM. It reduces the swing voltages of the bit lines and data bus by elevating the source level of the memory cells from GND to $V_{T}$ and lowering the precharge level of the bit lines and data bus from $V_{DD}$ to $V_{DD}$ - $V_{T}$. It saves the write power of SRAM without area overhead and speed degradation. An SRAM with 8K${\times}$32bits is fabricated in a 0.25um CMOS process. It saves 45% of the power in write cycles at 300MHz with 2.5V. The maximum operating frequency is 330MHz.

• Transactions on Electrical and Electronic Materials
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• v.16 no.6
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• pp.293-302
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• 2015

Degraded data stability, weaker write ability, and increased leakage power consumption are the primary concerns in scaled static random-access memory (SRAM) circuits. Two new SRAM cells are proposed in this paper for achieving enhanced read data stability and lower leakage power consumption in memory circuits. The bitline access transistors are asymmetrically gate-underlapped in the proposed SRAM cells. The strengths of the asymmetric bitline access transistors are weakened during read operations and enhanced during write operations, as the direction of current flow is reversed. With the proposed hybrid asymmetric SRAM cells, the read data stability is enhanced by up to 71.6% and leakage power consumption is suppressed up to 15.5%, while displaying similar write voltage margin and maintaining identical silicon area as compared to the conventional memory cells in a 15 nm FinFET technology.