• 청정기술
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• 제22권2호
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• pp.82-88
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• 2016

코크에 의한 촉매의 불활성화는 산업현장에서 촉매가 사용되는 동안 매우 중요하다. 본 연구에서는 프로판 탈수소 반응을 위한 Pt-Sn 촉매에서 반응조건인 수소의 비율이 코크생성에 미치는 영향과 코크버닝에 의한 촉매 활성의 회복여부, 그리고 코크양에 따른 코크버닝 중의 백금소결여부, Pt-Sn-K 촉매에서 Sn의 함량이 코크생성과 불활성화에 미치는 영향을 확인하고자 하였다. Pt-Sn-K는 Pt와 Sn, K를 순차적으로 각각 θ-알루미나와 γ-알루미나에 담지 하여 제조하였다. 프로판 탈수소 반응은 먼저 반응물중의 수소비를 달리하여 620 ℃에서 수행한 후, 코크버닝을 통해 재생하고 다시 프로판 탈수소 성능을 비교하였다. 재생촉매의 B.E.T 분석과 코크분석, XRD (X-ray diffraction)와 같은 물리분석을 동시에 수행하였다. 촉매의 활성테스트와 특성분석을 통하여 반응물 상에서 수소의 비와 촉매의 Sn함량이 촉매표면의 코크 형성에 영향을 줄 수 있다는 것을 알 수 있다. 또한, 과량의 코크는 Air 재생 과정에서의 백금입자의 소결을 일으키고 촉매의 활성을 저하시킬 수 있다.

• 전기화학회지
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• 제8권3호
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• pp.139-145
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• 2005

전자싸이크로트론공명(ECR: Electro Cyclotron Resonance)상온화학증착법에 의해 PET 폴리머기판위에 $SnO_x$ 박막을 제조하고, Sn의 전구체인 TMT(Tetra-methyl Tin)에 대한 산소와 수소의 몰 비 변화가 박막의 특성에 미치는 영향을 조사하였다 비화학양론적인 결합에 의해 성장된 투명 주석 산화막은 주입되는 산소/TMT, 수소/TMT몰 비에 의하여 조성비가 결정되고, 결정된 조성비에 의해 전기적 성질이 결정되는 것을 확인할 수 있었다. 산소/TMT의 몰 비 변화에 대하여 PET(polyethylene terephthalate)에 증착된 $SnO_x$ 박막의 최적 조성비는 1:2.4이다. 조성비는 반응에 참가하는 산소의 양이 증가할수록 점차적으로 증가하고, 과량의 몰 비로 산소가 주입될 경우 박막내의 Sn과 결합하지 않고 잉여 산소전하밀도를 증가시켜 bulk한 박막을 형성해 전기 비저항을 증가시키는 주요 원인이 된다. 수소/TMT의 몰 비는 산소 몰 비와 같이 증착되는 $SnO_x$의 몰 비에 영향을 주어 조성비를 변화시킴으로서 전기비저항을 결정하는데 크게 기여한다. 반응기내에 공급되는 수소량이 적으면 TMT의 불완전한 분해를 초래하여 반응에 필요한 $Sn^+$ 이온농도가 낮아지게 되고,상대적으로 잉여 산소함량이 증가하면서 높은 저항을 나타낸다. 임계값 이상으로 많은 양의 수소를 공급하면 플라즈마 내에 존재하는 $O^-$ 이온을 환원시켜 주석 산화막의 형성에 필요한 $O^-$ 이온의 감소로 전기저항이 오히려 증가하게 된다. 따라서 박막의 Sn:O의 조성비는 주입되는 산소량이 증가할수록 더욱 큰 값을 갖게 되고, 주입되는 수소량이 증가할수록 작은 값을 갖게 된다. 본 연구범위에서 TMP에 대한 산소의 몰 비는 80배, 수소의 몰 비는 40배일 때 가장 투명도와 전기전도도를 지니는 박막 특성을 나타내었다.

• 한국재료학회지
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• 제17권7호
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• pp.376-381
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• 2007

Fluorine-doped tin oxide (FTO) thin film was coated on aluminosilicate glass at $450^{\circ}C$ by spray pyrolysis method. In the range of 0-2.7 molar ratio of F/Sn, the variations of electrical conductivity and visible light transmission were investigated. At the F/Sn ratio of 1.765, the film showed the lowest electrical resistivity value of $3.0{\times}10^{-4}{\Omega}\;cm$, the highest carrier concentration of $2.404{\times}10^{21}/cm^3$, and about $8\;cm^2/V{\cdot}sec$ of electronic mobility. The FTO film showed a preferred orientation of (200) plane parallel to the substrate. X-ray photoelectron spectroscopy analysis results indicated that the contents of $Sn^{4+}-O$ bonding are the highest at 1.765 of F/Sn molar ratio.

• 한국재료학회지
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• 제12권4호
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• pp.248-253
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• 2002

Effect of Sn addition on the fatigue properties of Al-Cu-Mn cast alloy was investigated by low and high cycle fatigue tests. Fatigue life showed the maximum value of 5450cycles in the Al-Cu-Mn alloy containing 0.10%Sn, but decreased rapidly beyond 0.20% of Sn additions. It was found that the fatigue strength was 132MPa and fatigue ratio was 0.31 in the alloy containing 0.10%Sn. Metallographic observation revealed that the fatigue crack initiated at the surface and propagated along the grain boundary. This propagation path was attributed to the presence of PFZ along the grain boundary. The tensile strength increased from 330MPa in 7he Sn-free Al-Cu-Mn cast alloy to 429MPa in the alloy containing 0.10%Sn. But above 0.20%Sn additions, tensile strength was decreased by the segregation of Sn.

• Journal of Welding and Joining
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• 제7권3호
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• pp.36-43
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• 1989

The furnace brazing in a Ar of copper to martensitic stainless steel(13.5Cr) using Cu-(5~8%)P-(0~8%)Sn powders was investigated. Shear strength, wettability, reacted layer, defect ratio at the stainless steel interface was evaluated. As Sn was added to the Cu-P powders, defect ratio and P content at the stainless steel interface decreased. And also as Sn was added, defect form at the stainless steel interface changed from the continuous layer to the discrete type, and shear strength of the brazed joint increased.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2011년도 제42회 하계학술대회
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• pp.2013-2014
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• 2011

Indium tin oxide (ITO) thin films have been deposited onto bare glass substrates by sol-gel process. The solution was prepared by mixing indium precursor and tin precursor dissolved in 2-methoxyethanol at $75^{\circ}C$ for 12 hours. Indium tin oxide films were prepared by slowly heat up to $200^{\circ}C$ for 10 minutes and annealed at $350^{\circ}C$ for 1 hour. In this paper, we researched simple and inexpensive sol-gel process. To find the optimal ratio of In/Sn to reduce electric resistance in ITO made by sol-gel process, we assessed electric properties varying the ratio of In and Sn precursor.

• 마이크로전자및패키징학회지
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• 제21권1호
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• pp.13-17
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• 2014

The direct-patternable $SnO_2$ thin film was successfully fabricated by photochemical metal-organic deposition. The composition and chemical bonding state of $SnO_2$ thin film were analyzed by using X-ray photoelectron spectroscopy (XPS) from the surface to the interface with Si substrate. XPS depth profiling analysis allowed the determination of the atomic composition in $SnO_2$ film as a function of depth through the evolution of four elements of C 1s, Si 2p, Sn 3d, and O 1s core level peaks. At the top surface, nearly stoichiometric $SnO_2$ composition (O/Sn ratio is 1.92.) was observed due to surface oxidation but deficiency of oxygen was increased to the interface of patterned $SnO_2/Si$ substrate where the O/Sn ratio was about 1.73~1.75 at the films. This O deficient state of the film may act as an n-type semiconductor and allow $SnO_2$ to be applied as a transparent electrode in optoelectronic applications.

• 한국재료학회지
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• 제18권7호
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• pp.373-378
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• 2008

$Ba(Ti,Sn)O_3$ thin films, for use as dielectrics for MLCCs, were grown from Sn doped BaTiO3 sources by e-beam evaporation. The crystalline phase, microstructure, dielectric and electrical properties of films were investigated as a function of the (Ti＋Sn)/Ba ratio. When $BaTiO_3$ sources doped with $20{\sim}50\;mol%$ of Sn were evaporated, $BaSnO_3$films were grown due to the higher vapor pressure of Ba and Sn than of Ti. However, it was possible to grow the $Ba(Ti,Sn)O_3$ thin films with {\leq}\;15\;mol%$ of Sn by co-evaporation of BTS and Ti metal sources. The (Ti＋Sn)/Ba and Sn/Ti ratio affected the microstructure and surface roughness of films and the dielectric constant increased with increasing Sn content. The dielectric constant and dissipation factor of $Ba(Ti,Sn)O_3$ thin films with {\leq}\;15\;mol%$ of Sn showed the range of 120 to 160 and $2.5{\sim}5.5%$ at 1 KHz, respectively. The leakage current density of films was order of the $10^{-9}{\sim}10^{-8}A/cm^2$ at 300 KV/cm. The research results showed that it was feasible to grow the $Ba(Ti,Sn)O_3$ thin films as dielectrics for MLCCs by an e-beam evaporation technique.

• 한국세라믹학회지
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• 제29권12호
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• pp.990-996
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• 1992

Chemical vapor deposition of ATO from SnCl4-SbCl5-H2O gas mixture was investigated with thermodynamic and experimental analyses. Electrical conductivity of the ATO film was much improved under deposition conditions of low input-gas ratio, Psbcl5/Psbcl4. This increase of the conductivity was attributed to donor electrons produced mainly by the pentavalent Sb ions in SnO2 lattice. However high input-gas ratio conditions produced an ATO film consisting of a mixture of SnO2 and very fine Sb2O5 phase. It was found that the deterioration of electrical conductivity and optical transmission of the film was caused by the deposition of fine Sb2O5 phase in the SnO2 matrix.

• 한국표면공학회지
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• 제32권4호
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• pp.521-530
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• 1999

The corrosion resistance and the hardness of the tin-nickel alloy deposits electroplated in pyrophosphate bath were invesitigated according to electrolysis conditions and microstructure of the alloy. The weight loss of alloy deposits increased with the Sn content of single phase (Ni-Sn) alloy showing the lowest weight loss in the alloy with 54∼57wt% Sn. On the other hand, the multiphase alloy with 35∼42wt% Sn showed the highest one. The CASS test result was consistent with that of immersion test, and was good agreement with the corrosion data of polarization measurements. The hardness of alloy deposits decreased with the increase of Sn ratio in bath due to the grain size increase of the alloy. However, it increased noticeably with decreasing current density in the bath condition of low Sn ratio (0.1)