Influence of In/Sn Ratio and Precursor on the Electrical Properties of Solution-processed Indium-Tin-Oxide Electrodes

용액공정 Indium-Tin-Oxide 전극에서 In/Sn Ratio 및 Precursor가 전기적 특성에 미치는 영향

  • Kim, Na-Young (Dongguk University Chemical Engineering) ;
  • Kim, Yong-Hoon (Korea Electronics Technology Institute, Flexible Display Research Center) ;
  • Han, Jeong-In (Dongguk University Chemical Engineering)
  • 김나영 (동국대학교 화학공학과) ;
  • 김영훈 (전자부품연구원 플랙서블디스플레이연구센터) ;
  • 한정인 (동국대학교 화학공학과)
  • Published : 2011.07.20


Indium tin oxide (ITO) thin films have been deposited onto bare glass substrates by sol-gel process. The solution was prepared by mixing indium precursor and tin precursor dissolved in 2-methoxyethanol at $75^{\circ}C$ for 12 hours. Indium tin oxide films were prepared by slowly heat up to $200^{\circ}C$ for 10 minutes and annealed at $350^{\circ}C$ for 1 hour. In this paper, we researched simple and inexpensive sol-gel process. To find the optimal ratio of In/Sn to reduce electric resistance in ITO made by sol-gel process, we assessed electric properties varying the ratio of In and Sn precursor.