• 한국태양에너지학회 논문집
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• 제34권4호
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• pp.39-44
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• 2014

The elemental composition of electro-deposited black Cr solar selective coatings before and after heating in air by using secondary ion mass spectrometry (SIMS) was investigated for optical property analysis. In addition, black Cr selective coating exposed by solar radiation for 5 months was compared with heated sample. SIMS investigation shows that $OH^+$ bearing ions were related to a near surface region of CrOH and CrO compound. The optical degradation of this coating after heating at $500^{\circ}C$ reveals that diffusion of the Cu and Ni elements in substrate material, the chemical interactions adjacent to the interface, and the interface width broadening.

• 대한공간정보학회지
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• 제1권2호
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• pp.131-141
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• 1993

본 논문에서는 선로시설 관리시스팀(TOMS)의 주요기능인 선로도면의 입출력 및 시설현황 통계보고서 작성 등의 기본적인 기능을 넘어서서 방대한 선로시설 데이타베이스의 효용성을 극대화시키고 단순한 시설관리 측면뿐만 아니라 가입자 서비스 증대를 목표로 선로시설과 가입자 정보를 통합적으로 관리할 수 있는 가입자시설 종합관리시스팀(SIMS)의 개발에 대해서 기술한다. SIMS가 제공하는 기능으로는 전화 가설용 공사명령서 제작, 외선자동선정, 케이블추적 및 구간별 유휴 심선 관리, 선전번 데이타 관리 및 통계보고서 작성, 가입자, 지번 정보관리 등이 있다.

• 한국진공학회지
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• 제10권2호
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• pp.225-233
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• 2001

Oxygen flooding을 이용한 Secondary ion Mass Spectrometry(SIMS) 분석에 있어서 표면에 산화막이 있을 때 발생하는 SIMS depth profile의 왜곡현상에 대한 원인을 분석하고 이를 보정하였다. 이러한 왜곡현상은 표면 산화막에서와 Si 매질에서의 sputter rate이 다른 데서 발생하는 깊이 보정 오류와 상대감도인자(relative sensitivity factor, RSF)가 다른 데서 발생하는 농도보정 오류로부터 발생됨이 밝혀졌다. 깊이보정 오류를 바로잡기 위하여 $N^a+$ 이온을 산화막과 Si 매질의 계면에 대한 marker로 사용하였으며 산화막 두께는 SEM 및 XPS로 측정하였다. 산화막과 Si 매질에서의 sputter rate 및 RSF의 차이는 주로 oxygen flooding이 유발한 산화막 형성시의 부피팽창에 의한 것으로 해석되었으며 이를 보정한 depth profile은 oxygen flooding없이 분석한 경우와 거의 동일한 결과를 보여주었다.

• Mass Spectrometry Letters
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• 제12권2호
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• pp.47-52
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• 2021

Evaluating the impurity concentrations in semiconductor thin films using time of flight secondary ion mass spectrometry (ToF-SIMS) is an effective technique. The mass interference between isotopes and matrix element in data interpretation makes the process complex. In this study, we have investigated the doping concentration of phosphorus in, phosphorus doped silicon thin film on glass using ToF-SIMS in the dynamic mode of operation. To overcome the mass interference between phosphorus and silicon isotopes, the quantitative analysis of counts to concentration conversion was done following two routes, standard relative sensitivity factor (RSF) and SIMetric software estimation. Phosphorus doped silicon thin film of 180 nm was grown on glass substrate using hot wire chemical vapor deposition technique for possible applications in optoelectronic devices. Using ToF-SIMS, the phosphorus-31 isotopes were detected in the range of 10¹~10⁴ counts. The silicon isotopes matrix element was measured from p-type silicon wafer from a separate measurement to avoid mass interference. For the both procedures, the phosphorus concentration versus depth profiles were plotted which agree with a percent difference of about 3% at 100 nm depth. The concentration of phosphorus in silicon was determined in the range of 10¹⁹~10²¹ atoms/cm³. The technique will be useful for estimating distributions of various dopants in the silicon thin film grown on glass using ToF-SIMS overcoming the mass interference between isotopes.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2008년도 추계학술대회 논문집
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• pp.91-94
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• 2008

Newly developed Atom Probe Tomography (APT) technique can provide the highest available spatial resolution, 3D tomography imaging and quantitative chemical analysis in a sub-nm scale. As a complementary technique to APT, Nano-secondary ion Mass Spectroscopy (SIMS) also provides the boron distribution in micro-scale. Therefore, the exact behavior of boron at either grain boundary or grain interior in steels can be investigated by the combination of APT and SIMS techniques from the sub-nanometer scale to the micrometer scale. The results obtained by both APT and SIMS revealed that the boron atoms were mainly segregated to the grain boundaries rather than to the grain interior in the steels containing 50ppm and 100ppm boron. It also found that carbon atoms were segregated at the boron enriched regions, which were thought to be retained austenite phase due to the chemical composition of carbon atoms.

• 한국전기전자재료학회논문지
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• 제15권7호
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• pp.576-582
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• 2002

Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectrics were fabricated, and nitrogen distribution and bonding species which contribute to memory characteristics were analyzed. Also, memory characteristics of devices depending on the anneal temperatures were investigated. The devices were fabricated by retrograde twin well CMOS processes with $0.35\mu m$ design rule. The processes could be simple by in-situ process in growing dielectric. The nitrogen distribution and bonding states of gate dielectrics were investigated by Dynamic Secondary Ion Mass Spectrometry(D-SIMS), Time-of-Flight Secondary Ion Mass Spectrometry(ToF-SIMS), and X-ray Photoelectron Spectroscopy(XPS). As the nitridation temperature increased, nitrogen concentration increased linearly, and more time was required to form the same reoxidized layer thickness. ToF-SIMS results showed that SiON species were detected at the initial oxide interface which had formed after NO annealing and $Si_2NO$ species within the reoxidized layer formed after reoxidation. As the anneal temperatures increased, the device showed worse retention and degradation properties. It could be said that nitrogen concentration near initial interface is limited to a certain quantity, so the excess nitrogen is redistributed within reoxidized layer and contribute to electron trap generation.

• 보존과학회지
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• 제34권2호
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• pp.129-135
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• 2018

Scientific investigation of cultural heritage can provide important information to understand the context of the object. To know the characteristics of the material is also an essential part of objects management and conservation. However, the identification and characterization of organic dyes used in archaeological and historical textiles are often limited by the restrictions in sampling. To cope with the difficulties, applications of high-performance techniques of surface analysis, such as Time of Flight-Secondary Ion Mass Spectra (TOF-SIMS) could be considered as a non or micro-destructive option. This study aims to examine the applicability of TOF-SIMS analysis to the detection of organic dyes from historical textiles. A group of silk fabrics dyed with vegetable dyes were artificially photo-aged to different degrees and analyzed with TOF-SIMS. Molecular and fragment ions from indigo were successfully detected from the aged samples; however, only some fragment ions were observed from gardenia and safflower dyed fabrics. Further studies with actual historical samples with extended examination scope would be necessary to assess the validity of this technique.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.17-20
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• 2001

Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectric were fabricated, and nitrogen distribution and bonding species which contributing memory characteristics were analyzed. Also, memory characteristics of devices according to anneal temperatures were investigated. The devices were fabricated by 0.35$\mu\textrm{m}$ retrograde twin well CMOS processes. The processes could be simple by in-situ process of nitridation anneal and reoxidation. The nitrogen distribution and bonding state of gate dielectric were investigated by Dynamic Secondary Ion Mass Spectrometry(D-SIMS), Time-of-Flight Secondary ton Mass Spectrometry(ToF-SIMS), and X-ray Photoelectron Spectroscopy(XPS). Nitrogen concentrations are proportional to nitridation anneal temperatures and the more time was required to form the same reoxidized layer thickness. ToF-SIMS results show that SiON species are detected at the initial oxide interface and Si$_2$NO species near the new Si-SiO$_2$ interface that formed after reoxidation. As the anneal temperatures increased, the device showed worse retention and degradation properties. These could be said that nitrogen concentration near initial interface is limited to a certain quantity, so excess nitrogen are redistributed near the Si-SiO$_2$ interface and contributed to electron trap generation.

• 한국정보과학회:학술대회논문집
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• 한국정보과학회 2003년도 가을 학술발표논문집 Vol.30 No.2 (1)
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• pp.571-573
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• 2003

초.중등학교에서는 교육행정업무의 효율성을 위하여 학교정보관리시스템을 활용하고 있다. 본 논문에서는 새로 도입한 교육행정정보시스템(NEIS)과 기존의 종합정보관리시스템(SIMS, CS)의 변화된 기능을 파악해보고, NEIS의 효율성과 현장 적합성을 가능해보고자 하였다. 그 결과, 학적관리, 성적관리, 각종 교육통계 및 보고업무, 대민 서비스 등의 개선된 기능이 있는 반면, 보건관리, 교수학습 지원, 그룹웨어 기능의 지원이 미흡하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 A
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• pp.508-509
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• 2006

인터넷 이용자의 편의를 위하여 기업포탈(Enterprise Portal)을 구축하는 사례가 급증하고 있으며, ERP 도입을 통하여 기존의 많은 시스템의 통합을 추진하고 있는 추세로서 송변전지리정보시스템(TGIS)과 변전소 정보관리시스템(SIMS)의 통합 운영은 시스템적인 측면과 업무적인 측면을 모두 고려하여 볼 때 그 효용성은 매우 크다고 할 수 있으며, 송변전이 통합된 자산관리 운영에 다양한 편의성을 제공할 것이다.