• Analytical Science and Technology
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• v.13 no.5
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• pp.584-591
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• 2000

The separation of Nd from the simulated $U_3Si/Al$ spent fuel solution with sequential two-step anion exchange separation has been studied. To prepare the simulated $U_3Si/Al$ spent nuclear fuel, unirradiated $U_3Si/Al$ whose composition consists of small $U_3Si$ particle dispersed in an Al matrix with Al cladding was dissolved with a mixture of 4 M HCl and 10 M $HNO_3$ and 8 or 15 fission product elements were added to the dissolved solution. The trace amount of silica in the solutions was removed by evaporating to dryness with HF and the U was adsorbed on the first anion exchange resin. Neodymium can be purely isolated from the fission product elements with a methanol-nitric acid eluent using the second anion exchange resin. A large excess of Al didn't influence on the elution velocity of Nd, but reduced the eluted contents of Nd, Al, Eu, Gd, Sm and Sr, A large amount of Al was removed first from the column with 3 mL of loading solution (0.8 M $HNO_3$/99.8% MeOH) before Nd elution by the eluent [0.04 M $HNO_3$-99.8% MeOH(1:9)]. The recovery of Nd was more than 94%, regardless of Al contents. Taking the 9 to 13 mL fraction of eluate was effective to purely isolate Nd.

• Transactions of Materials Processing
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• v.7 no.2
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• pp.158-167
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• 1998

Hot restoration mechanism flow stress and stain of the Al2024 composites reinforced with 1,8,15,36, and $44{\mu}m\;SiC_p$(10 vol. %) were studied by hot torsion tests. The hot restoration mechanism of all the composites was found to be dynamic recrystallization(DRX) at $320^{\circ}C$ while that of the composites reinforced with 1 and $8{\mu}m\;SiC_p$ was found to be dynamic recovery(DRX) at $480^{\circ}C$. It was found that the Al2024 composite with $15{\mu}m\;SiC_p$ showed the highest flow stress(${\sim}$223 MPa) at $320^{\circ}C$ under a strain rate of 1.0/sec. Also the highest flow strain of the composites was obtained at $430^{\circ}C$. The com-posites reinforced with 1 and $8{\mu}m\;SiC_p$ showed lower flow stress and higher flow strain at $480^{\circ}C$ than those of the composites reinforced with 15, 36, and $44\;{\mu}m\;SiC_p$ These result were discussed in relation to the transition of the hot restoration mechanism. $DRX{\leftrightarrow}DRV$. The dependence of flow stress on strain rate and temperature was attempted to fit with the hyperbolic sine equation ($\dot{\varepsilon}=A[sinh({\alpha}{\cdot}{\sigma}_p]^n$ exp(-Q/RT)and Zener-Hollomon parameter($Z=\;\dot{\varepsilon}\;exp(Q/RT))$.

• Journal of the Korean Ceramic Society
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• v.38 no.12
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• pp.1150-1154
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• 2001

Silicon oxynitride (SiON) thick films using the core layer of silica optical waveguide have been deposited on Si wafer by PECVD at low temperature (32$0^{\circ}C$) were obtained by decomposition of appropriate mixture of (SiH$_4$+$N_2$O+$N_2$) gaseous mixtures under RF power and SiH$_4$/($N_2$O+$N_2$) ratio deposition condition. Prism coupler measurements show that the refractive indices of SiON layers range from 1.4663 to 1.5496. A high SiH$_4$/($N_2$O+$N_2$) of 0.33 and deposition power of 150 W leads to deposition rates of up to 8.67 ${\mu}{\textrm}{m}$/h. With decreasing SiH$_4$/($N_2$O+$N_2$) ratio, the SiON layer become smooth from 41$\AA$ to 6$\AA$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1989.06a
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• pp.49-51
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• 1989

The effect of Mo elenent and annealing condition on the magnetic properties were investigated in Fe$_{80}$B$_{12}$Si$_{8}$ amorphous alloy. With increasing Mo contents, soft magnetic properties were improved by decreasing coercive force and increasing maximum permeability. These improvements were attributed to the decreasing of magnetostriction by Mo addition. The annealing treatment also improved the soft magnetic properties of (Fe$_{1-x}$ Mo$_{x}$)$_{80}$ B$_{12}$ Si$_{8}$ amorphous alloys. It could be thought that these improvements were ascribed to the relaxation of internal stress.nal stress.ess.

• The Journal of Korean Medicine
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• v.39 no.1
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• pp.55-62
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• 2018

Objectives: This study aims to investigate on the nomenclature of acupoints for the Healthcare Terminology Standard. Methods: We investigated the name of acupoints in "Standard Acupuncture Nomenclature (Second Edition)" of WHO, "WHO Standard Acupuncture Point Locations in The Western Pacific Region", "Principles of Meridians & Acupoints", "Details of Meridians & Acupoints" and "Acupuncture Medicine". Results: In books, we found that the name of acupoints was used differently in LI19, TE22, HT3, SI8, ST16, SI16, GB16 and BL8 acupoints. Conclusions: 口禾髎(LI19), 耳和髎(TE22), 少海(HT3), 小海(SI8), 膺窗(ST16), 天窗(SI16), 目窗(GB16), 絡卻(BL8) and 淵腋(GB22) in confused acupoints have been established as the terms of acupoints for the Healthcare Terminology Standard.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.239-242
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• 2009

$Sr_2Si_5N_8:Eu^{2+}$, one of the most recently developed phosphors for use in white light emitting diodes, exhibits a two-peak emission. Namely, the emission band of $Sr_2Si_5N_8:Eu^{2+}$ is deconvoluted into two Gaussian peaks irrespective of the $Eu^{2+}$ concentration. We examined the two-peak emission of $Sr_2Si_5N_8:Eu^{2+}$ by analyzing the time-resolved photoluminescence spectra. We revealed that the two-peak emission was closely associated with the energy transfer taking place between $Eu^{2+}$ activators located at two different crystallographic sites in the $Sr_2Si_5N_8$ structure. The experimental results coincided well with the rate equation model involving the crystallographic information of the host.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.10a
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• pp.537-541
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• 2003

The a-Si:H TFTs using ferroelectric of SrTiO$_3$, as a gate insulator is fabricated on glass. Dielectric characteristics of ferroelectric is better than SiO$_2$, SiN. Ferroelectric increases ON-current, decreases threshold voltage of TFT and also breakdown characteristics. The a-Si:H deposited by PECVD shows absorption band peaks at wavenumber 2,000 $cm^{-1}$ /, 635 $cm^{-1}$ / and 876 $cm^{-1}$ / according to FTIR measurement. Wavenumber 2,000 $cm^{-1}$ /, 635 $cm^{-1}$ / are caused by stretching and rocking mode SiH1. The wavenumber of weaker band, 876 $cm^{-1}$ / is due to SiH$_2$ vibration mode. The a-SiN:H has optical bandgap of 2.61 eV, refractive index of 1.8 - 2.0 and resistivity of 10$^{11}$ - 10$^{15}$ aim respectively. Insulating characteristics of ferroelectric is excellent because dielectric constant of ferroelectric is about 60 - 100 and breakdown strength is over 1 MV/cm. TFT using ferroelectric has channel length of 8 - 20 $\mu$m and channel width of 80 - 200 $\mu$m. And it shows drain current of 3 $\mu$A at 20 gate voltages, Ion/Ioff ratio of 10$^{5}$ - 10$^{6}$ and Vth of 4 - 5 volts.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.236-238
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• 1997

A cellular power amplifier using an APCVD(Atmospheric Pressure Chemical Vapor Deposition)-grown SiGe base HBT of ETRI has been designed with a linear simulation CAD. The Si/SiGe HBT with an emitter area of 2$\times$8${\mu}{\textrm}{m}$$^2$typically has a cutoff frequency(f$_{T}$) of 7.0 GHz and a maximum oscillation frequency(f$_{max}$) of 16.1 GHz with a pad de-embedding A packaged power Si/SiGe HBT with an emitter area of 2$\times$8$\times$80${\mu}{\textrm}{m}$$^2$typically shows a f$_{T}$ of 4.7 GHz and a f$_{max}$ of 7.1 GHz at a collector current (Ic) of 115 mA. The power amplifier exhibits a Forward transmission coefficient(S21) of 13.5 dB, an input and an output reflection coefficients of -42 dB and -45 dB respectively. Up to now the III-V compound semiconductor devices hale dominated microwave applications, however a rapid progress in Si-based technology make the advent of the Si/SiGe HBT which is promising in low to even higher microwave range because of lower cost and relatively higher reproducibility of a Si-based process.ess.ess.

• Journal of the Korean institute of surface engineering
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• v.37 no.3
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• pp.152-157
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• 2004

Ti-Al-N ($Ti_{75}$ $Al_{25}$ N) and Ti-Al-Si-N ($Ti_{69}$ $Al_{23}$ $Si_{8}$N) coatings synthesized by a DC magnetron sputtering technique were studied comparatively with respect to phase characterization and high-temperature oxidation behavior. $Ti_{69}$ $Al_{23}$ $Si_{ 8}$N coating had a nanocomposite microstructure consisting of nanosized(Ti,Al,Si)N crystallites and amorphous $Si_3$$N_4$, with smooth surface morphology. Ti-Al-N coating of which surface $Al_2$$O_3$ layer formed during oxidation suppressed further oxidation. It was sufficiently stable against oxidation up to about $700^{\circ}C$. Ti-Al-Si-N coating showed better oxidation resistance because both surface Ab03 and near-surface $SiO_2$ layers suppressed further oxidation. XRD, GDOES, XPS, and scratch tests were performed.

• Journal of IKEEE
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• v.18 no.4
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• pp.447-455
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• 2014

In this research, n-based 4H-MOS Capacitor was fabricated with PECVD (plasma enhanced chemical vapor deposition) process for improving SiC/$SiO_2$ interface properties known as main problem of 4H-SiC MOSFET. To overcome the problems of dry oxidation process such as lower growth rate, high interface trap density and low critical electric field of $SiO_2$, PECVD and NO annealing processes are used to MOS Capacitor fabrication. After fabrication, MOS Capacitor's interface properties were measured and evaluated by hi-lo C-V measure, I-V measure and SIMS. As a result of comparing the interface properties with the dry oxidation case, improved interface and oxide properties such as 20% reduced flatband voltage shift, 25% reduced effective oxide charge density, increased oxide breakdown field of 8MV/cm and best effective barrier height of 1.57eV, 69.05% reduced interface trap density in the range of 0.375~0.495eV under the conduction band are observed.