전기전자학회논문지 (Journal of IKEEE)

  • 제18권4호
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  • Pages.447-455
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  • 2014
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  • 1226-7244(pISSN)
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  • 2288-243X(eISSN)
한국전기전자학회 (Institute of Korean Electrical and Electronics Engineers)
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PECVD와 NO 어닐링 공정을 이용하여 제작한 N-based 4H-SiC MOS Capacitor의 SiC/SiO2 계면 특성

SiC/SiO2 Interface Characteristics in N-based 4H-SiC MOS Capacitor Fabricated with PECVD and NO Annealing Processes

  • 투고 : 2014.10.02
  • 심사 : 2014.11.07
  • 발행 : 2014.12.31
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초록

본 연구에서는 4H-SiC MOSFET의 주요 문제점인 $SiC/SiO_2$ 계면의 특성을 향상시키기 위해 PECVD (plasma enhanced chemical vapor deposition) 공정을 이용하여 n-based 4H-SiC MOS Capacitor를 제작하였다. 건식 산화 공정의 낮은 성장속도, 높은 계면포획 밀도와 $SiO_2$의 낮은 항복전계 등의 문제를 극복하기 위하여 PECVD와 NO어닐링 공정을 사용하여 MOS Capacitor를 제작하였다. 제작이 끝난 후, MOS Capacitor의 계면특성을 hi-lo C-V 측정, I-V 측정 및 SIMS를 이용해 측정하고 평가하였다. 계면의 특성을 건식 산화의 경우와 비교한 결과 20% 감소한 평탄대 전압 변화, 25% 감소한 $SiO_2$ 유효 전하 밀도, 8MV/cm의 증가한 $SiO_2$ 항복전계 및 1.57eV의 유효 에너지 장벽 높이, 전도대 아래로 0.375~0.495eV만큼 떨어져 있는 에너지 영역에서 69.05% 감소한 계면 포획 농도를 확인함으로써 향상된 계면 및 산화막 특성을 얻을 수 있었다.

In this research, n-based 4H-MOS Capacitor was fabricated with PECVD (plasma enhanced chemical vapor deposition) process for improving SiC/$SiO_2$ interface properties known as main problem of 4H-SiC MOSFET. To overcome the problems of dry oxidation process such as lower growth rate, high interface trap density and low critical electric field of $SiO_2$, PECVD and NO annealing processes are used to MOS Capacitor fabrication. After fabrication, MOS Capacitor's interface properties were measured and evaluated by hi-lo C-V measure, I-V measure and SIMS. As a result of comparing the interface properties with the dry oxidation case, improved interface and oxide properties such as 20% reduced flatband voltage shift, 25% reduced effective oxide charge density, increased oxide breakdown field of 8MV/cm and best effective barrier height of 1.57eV, 69.05% reduced interface trap density in the range of 0.375~0.495eV under the conduction band are observed.

키워드

참고문헌

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피인용 문헌

  1. Two Dimensional Imaging of the Laterally Inhomogeneous Au/4H-SiC Schottky Barrier by Conductive Atomic Force Microscopy vol.556-557, pp.1662-9752, 2007, https://doi.org/10.4028/www.scientific.net/MSF.556-557.545
  2. 낮은 순방향 전압 강하를 갖는 4H-SiC Trench-type Accumulation Super Barrier Rectifier(TASBR) vol.21, pp.1, 2014, https://doi.org/10.7471/ikeee.2017.21.1.73