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광전류를 이용한 n-ZnO/p-Si과 n-ZnO/p-GaN p-n 접합 다이오드의 결함 분석

  • Jo, Seong-Guk;Nam, Chang-U;Kim, Eun-Gyu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.178-178
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    • 2013
  • 고체내의 결함을 분석하기 위한 장비로는 대표적으로 DLTS (deep level transient spectroscopy)를 이용하여 깊은 준위 결함의 활성화에너지를 구하는 분석법, 투과전자현미경을 이용한 박막의 결정살창 분석법, photoluminescence나 electroluminescence를 이용하여 광학적인 방법으로 결함을 분석하는 방법, 마지막으로 광전류 측정을 통하여 결함을 분석하는 방법 등이 있다. 이 중에서도 빛에 의해서 증가되는 광전류를 이용한 결함 분석 방법은 과거에는 종종 시행되어 왔으나 최근에는 거의 연구되어지고 있지 않고 있다. 고체 내의 많은 결함들이 빛에만 반응하는 결함도 있으며 전기적인 측정을 통해서만 발견되는 결함이 존재하기 때문에 모든 부분을 다 만족시키는 방법은 찾기가 힘들다고 알려져 있다. 한편, ZnO는 octahedral 구조로 공간이 비어있기 때문에 여러 가지 결함이 존재하는데, 그 중에서 valence band 바로 위 0.3~0.5 eV에 존재하는 결함 준위는 Zn 빈자리에 의한 결함으로 이론적으로만 밝혀졌을 뿐 실험적으로는 현재까지 발견되어지고 있지 않다. 본 연구에서는 광전류를 이용하여 n-ZnO/p-Si과 n-ZnO/p-GaN p-n 접합 다이오드 내의 결함에 대한 연구를 진행하였다. ZnO를 UHV 스퍼터링 방법으로 성장하였으며 ZnO의 결함의 양을 조절하기 위해 박막의 두께와 증착할 때의 기판 속도 등을 조절하였다. 이렇게 성장된 ZnO 기반의 다이오드를 광전류 측정을 이용하여 결함을 분석하였다. 실험결과 420 nm 파장의 빛을 다이오드에 주사하였을 때 광전류가 크게 증가하는 것을 확인하였으며 이것은 이론적으로만 주장되어져 왔던 Zn 빈자리 결함에 의한 것으로 판단되었다.

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Multichannel optical transmission-filters based on one-dimensional photonic crystals (일차원 광자결정을 이용한 다중채널 광-투과필터)

  • Nam, Gi-Yeon;Jeong, Geon;Kim, Jun-Hyung;Cho, Sung-Jun;Lee, Hyun-Yong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07b
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    • pp.993-997
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    • 2004
  • 파장다중분할 방식의 광통신소자는 단일파장 뿐만 아니라 이웃하는 여러 파장대에서도 동작 할 수 있는 유연성을 갖는 소자가 요구된다. 이를 해결하는 하나의 방법이 파장제어(다중채널)광자결정(Photonic crystal)소자이다. 본 연구에서는 결함층으로 광자결정체 배열구조를 가지는 다중주기 일차원광자결정을 이용하므로 투과광 파장제어가 가능한 가변형 다중채널 투과필터를 얻을 수 있는 이론적 모델과 그에 따라 제작된 $Si/SI_)2$의 광자결정체를 제작하고 그 특성을 고찰하였다. 반사밴드 갭내에 생성된 다중투과-dip의 파장 위치는 이론값과 정착하게 일치하였다. 특히, 결함층 수(N)에 따라 광자 에너지갭내에 2N개의 투과-dip 모드를 생성할 수 있으며, 이들은 주파수범위에 대해 대칭 분포됨을 알 수 있다. 여기에 제안하는 다중채널 투과필터는 외부 전원 없이 입사각도를 미세 조절하므로 파장을 tuning할 수 있다.

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A Systematic Approach for Selective Epitaxial Growth of Silicon using Transport Phenomena, Thermodynamics, and Microscopic Simulation (이동현상, 열역학, 미시적 이론 연구릉 통한 선택적 단결정 실리콘 성장공정의 전산모사)

  • 윤종호;박상규
    • Journal of the Korean Vacuum Society
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    • v.3 no.4
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    • pp.466-481
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    • 1994
  • 차세대 집적회로 제조공정에 있어 핵심기술인 선택적 단결정 실리콘 성장공정에 대한 이동현상, 열역학, 미시적 전산모사를 수행하여 다각적인 분석과 이해를 시도하였다. 첫째, 실리콘 단결정 성장 공 정에 가장 많이 사용되는 배럴 반응기를 대상으로 유한 요소법을 이용하여 이동현상적 이론연구를 수행 하였다. 반응기내의 기체속도 분포, SiH2Cl2 농도분포를 각각 구하였으며 압력, 기판온도, 총유량 HCl 유 량변화 등의주요공정변수가 증착율과 균일도 지수에 미치는 영햐을 고찰하였다. 이러한 연구를 통하여 저온, 저압, 총유량이 많고 첨가되는 HCl 유량이 작은 경우가 균일도 확보를 위하여 적합한 조업조건임 을 알수 있었다. 둘째 Si-H-Cl 계에 대한 열역학적 기체의 Cl/H비가 낮은 경우가 선택적 실리콘 증착 에 적합함을 알수 있었다. 셋째, Monte Carlo법을 이용한 선택적 실리콘 미세박막 성장패턴에 관한 이 론 연구를 수행하여 종횡비, 재방출, 표면확산에 따른 박막증착 패턴의 변화를 고찰하였으며 표면확산이 선택도 상실 현상의 중요한 원인이 될 수 있음을 발견하였다. 또한 최상의 선택도 확보를위해서는 낮은 부착계수와 낮은 표면확산계수를 유지해야 됨을 알수 있었다.

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Structural Analysis and Magnctic Propcrics of Amorphous $Fe_{78}Si_{9}B_{13}$ Alloy (비정질 $Fe_{78}Si_{9}B_{13}$ 합금의 구조와 자성 연구)

  • 이희복;송인명;유성초;임우영
    • Journal of the Korean Magnetics Society
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    • v.3 no.3
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    • pp.179-184
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    • 1993
  • The X-ray diffraction pattern of amorphous $Fe_{78}Si_{9}B_{13}$ alloy was analyzed to obtain the radial distribution function (RDF) where the first peak was in the form of Gaussian function. The calculated coordination number of the form of Gaussian functiono The calculated coordination number of the sample is 13.5, the mean distance betweeon near-neighbor atoms $r_{0}$ is $2.595{\AA}$ and a Gaussian parametet ${\delta}r$ indicating near-neighbor atomic distri-bution is $0.27{\AA}$. The temperature dependence of saturated magnetization at low temperature could be explained by spin wave excitations theory yielding the spin wave stiffness constant as $117.8\;meV\;{\AA}^2$. Also, we tried to fit the observed temperature dependence of saturated magnetization with the Handrich's equation of the modified molecular field theory for the amorphous ferromagnet. Nice fittings are obtained when we used the parameters ${\Delta}=0.32$(S=1/2) and ${\Delta}=0.23$(S=1), respectively. Finally, the calculated spin wave stiffness constant using the parameters and the structural data are $149\;meV\;{\AA}^2$ for S=1/2 and $138\;meV\;{\AA}^2$ for S=1, respectively. The mean exchange coupling integral between near-neighbor atoms was estimated to be 17.9 meV for S=1/2 and 6.7 meV for S=1.

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A Study on the Spring Season Food in View of Oriental Medicine (한의학 이론에 근거한 봄철 시절식(時節食)의 고찰)

  • Ji, Myoung-Soon;Kim, Yong-Jin
    • Journal of Haehwa Medicine
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    • v.21 no.2
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    • pp.21-36
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    • 2013
  • Jeol-sik, (festive seasons every 15 days based on sun cycle), refers to both Korean Traditional Festival food(jeol-sik), intertwined between months, and in-season meals(si-jeol-sik) in which the ingredients used are produced in each and one of the four season. Si-jeol-sik is a kind of recommendatory food, which is combined to seasonal changes. I found that ingredients in Si-jeol-sik of spring are helpful for strengthening one's life force. Moreover, the ingredients also reflects seasonal changes. The main ingredient of Si-jeol-sik in January(in lunar year) is rice. Rice is good for upgrading one's stomach qi(energy). Rice continues to be used in February. In addition, some greens are included in February Si-jeol-sik as to help defecation. In March, the ingredients become diverse and abundant. The main concern in the ingredients found in March is not limited to stomach qi. These changes of ingredients are in line with the concept of 'health maintenance', which is written in Huangdi Neijing. The writing teaches the wisdom of adaptation to nature. Si-jeol-sik's basic idea is maybe giving people some food, which includes useful elements to help them survive through a season or the next season. They can be also explained properly by the help of five flavours theory. According to Huangdi Neijing liver is main organ of spring. So liver is more important than other organs in spring. And the most efficient way for liver is supplying sweet or sour food. Interestingly, there are many sweet elements in Si-jeol-sik of spring.

A study on the measurement of thermophysical properties of ${Al}_{2}{O}_{3}, {Si}_{3}{N}_{4}$ and SiC series by a single rectangular pulse heating (방향파 펄스 가열에 의한 ${Al}_{2}{O}_{3}, {Si}_{3}{N}_{4}$, SiC 계열의 열물성치 측정에 관한 연구)

  • 차경옥;장희석;이흥주
    • Transactions of the Korean Society of Mechanical Engineers
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    • v.14 no.1
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    • pp.145-156
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    • 1990
  • In this study, thermophysical properties of the engineering ceramic materials such as $Al_{2}$O$_{3}$, Si$_{3}$N$_{4}$ and SiC were measured b y a single rectangular pulse heating method. The values of thermal diffusivities, specific heats, and thermal conductivities were measured as a function of temperature ranging form room temperature to 1300K. The measured thermal properties of one group of ceramic material were compared with those of other group and discussed in detail in connection with the chemical composition. Thus, some criteria for thermal design with the engineering ceramic materials were proposed.

A Study on the Optimization of Silicon Antiresonant Reflecting Optical Waveguides (ARROW) for Integrated Optical Sensor Applications (집적광학 센서 응용에 적합한 실리콘 비공진 반사형 광도파로 최적화에 관한 연구)

  • Jung, Hong-Sik
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.10 no.5
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    • pp.153-160
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    • 2010
  • We optimized the Si(substrate)/$SiO_2$(cladding)/$Si_3N_4$(antiresonant cladding)/$SiO_2$(core)/air multi-layers rib-optical waveguides of antiresonant reflecting optical waveguide (ARROW) for integrated optical biosensor structure utilizing beam propagation method (BPM). Thickness of anti-resonant cladding was derived to minimize the propagation loss and leaky field mode deeply related with evanescent mode was theoretically derived. Depth, width, refractive index and cladding thickness of anti-resonant cladding were numerically calculated into 2.3${\mu}m$, 5${\mu}m$, 1.488, and 0.11${\mu}m$ respectively to minimize propagation loss using the BPM simulation tool. Finally one- and two-dimensional propagation characteristics of ARROW was confirmed.

LiF(Mg, Cu, Na, Si) Thermoluminescent Dosimeters for In-phantom Dosimetry of $^{60}Co\;{\gamma}$-rays (LiF(Mg, Cu, Na, Si) 열형광선량계를 사용한 $^{60}Co\;{\gamma}^-$선의 수중 흡수선량 측정)

  • Kim, Hyun-Ja;Chung, Woon-Hyuk;Lee, Woo-Gyo;Doh, Sih-Hong
    • Journal of Radiation Protection and Research
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    • v.15 no.2
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    • pp.57-65
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    • 1990
  • Newly developed LiF(Mg, Cu, Na, Si) thermoluminescence phosphors sealed in a plastic capsules (32mm dia., 0.9mm wall thickness) were used for in-phantom dosimetry of $^{60}Co$ $\gamma$-irradiation. The absorbed doses in water were determined by applying the general cavity theory to the absorbed dose in TLD cavity, which was computed from exposure. The absorbed doses at various sites in the water-phantom were measured by LiF(Mg, Cu, Na, Si) TLD and compared with doses obtained by the ionization method. Both results were consistent within the experimental fluctuation$({\pm}3%)$ Central axis percentage depth doses and phantom-air ratios measured by LiF(Mg. Cu, Na, Si) TLD showed good agreement with the published values[Br. J. Radiology, Suppl. 17(1983)].

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Growth Mode of Tungsten Thin Film by Using Si$H_4$ Reduction of W$F_6$ in LPCVD System (저압 화학 기상 증착 조건에서 Si$H_4$, W$F_6$ 환원 반응에 의한 텅스텐 박막의 성장 양식)

  • Kim, Sung Hoon
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.3 no.2
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    • pp.107-116
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    • 1993
  • Tungsten thin film was deposited on Si( 100) substrate by either Si substrate reduction of W$F_6$( case 1) or Si$H_4$ reduction of W$F_6$( case 2) in LPCVD system The morphology and properties of deposited films for both cases were examined. The crystal structure for both cases was determined to be bec (body centered cubic). The amount of tungsten and the grain size in thin films were increased as the film grows. From the experimental results and theoretical considerations, it can be understood that the tungsten thin film grows by the volmer-weber growth mode, that is, island growth. The detailed tungsten thin film growth mode is presented. It was also found that the initial polycrystal structure of tungsten thin film developed into single crystal structure as the film grew in thickness.

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Half-metallicity and Magnetism of Co2ZrSi/ZnTe(001) Interface: A First-principles Study (Co2ZrSi/ZnTe(001)계면의 자성과 반쪽금속성에 대한 제일원리 연구)

  • Jin, Y.J.;Lee, J.I.
    • Journal of the Korean Magnetics Society
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    • v.17 no.4
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    • pp.147-151
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    • 2007
  • We have investigated the half-metallicity and magnetism for the Heusler ferromagnet $Co_2$ZrSi interfaced with semiconductor ZnTe along the (001) plane by using the full-potential linearized augmented plane wave (FLAPW) method. We considered low types of possible interfaces: ZrSi/Zn, ZrSi/Te, Co/Zn, and Co/Te, respectively. From the calculated density of states, it was found that the half-metallicity was lost at all the interfaces, however for the Co/Te system the value of minority spin density of states was close to zero at the Fermi level. These facts are due to the interface states, appeared in the minority spin gap in bulk $Co_2$ZrSi, caused by the changes of the coordination and symmetry and the hybridizations between the interface atoms. At the Co/Te interface, the magnetic moments of Co atoms are 0.68 and $0.78{\mu}_B$ for the "bridge" and "antibridge" sites, respectively, which are much reduced with respect to that ($1.15{\mu}_B$) of the bulk $Co_2$ZrSi. In the case of Co/Zn, Co atoms at the "bridge" and "antibridge" sites have magnetic moments of 1.16 and $0.93{\mu}_B$, respectively, which are almost same or slightly decreased compared to that of the bulk $Co_2$ZrSi. On the other hand, for the ZrSi/Zn and ZrSi/Te systems, the magnetic moments of Co atoms at the sub-interface layers are in the range of $1.13{\sim}1.30\;{\mu}_B$, which are almost same or slightly increased than that of the bulk $Co_2$ZrSi.