• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.936-937
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• 2008

As a micro computer or micro processor technology has been advanced, the essential part which consists of electric power system has been changed into intelligent electronic device(IED), that is one kind of embedded system. There are already many parts changed into digital from analog in control and maintenance devices of electric system. These trends make advanced and novel concepts of devices and systems, that we couldn't even imagine in the analog circumstances. Now, the rate's of change is comparatively slower than IT field that is mainly represented by mobile communication, but that is a big change in the history of electric industries. Some people in those field called it Power-IT, and there have been many kinds of researches. Accelerated systems to go digital, users always and continuously demand more convenient, practical, and new functions. So, a lot of electric system manufactures have had tasks realizing many kinds of functions in an electronic device. According to the high-end technologies in semi-conductor and micro-computer field, manufactures can fully satisfy almost all of customer's needs, but there are other kinds of problems, such as large amount of program code, increasing complexity in proportion with program amount, and the hardness of maintenance and revision of the program. So nowadays, the necessity of embedded OS was emerged as a solution, and many researchers and manufactures have concentrated on studies related to embedded OS and its application.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.16 no.1
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• pp.36-41
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• 2017

In this paper, $Si_3N_4/hBN$ ceramics with various hexagonal boron nitride (hBN) contents (0, 10, 20, or 30 wt%) were fabricated via spark plasma sintering (SPS) at $1500^{\circ}C$, 50MPa, and 10m holding time. The material properties such as the relative density, hardness, and fracture toughness were systematically evaluated according to the hBN content in the $Si_3N_4/hBN$ ceramics. The results show that relative density, hardness, and fracture toughness continuously decreased as the hBN content increased. In addition, peak-step drilling (with tool diameter $500{\mu}m$) was performed to observe the effects of hBN content in micro-hole shape and cutting force. A machined hole diameter of $510{\mu}m$ (entrance) and stable cutting force were obtained at 30 wt% hBN content. Consequently, $Si_3N_4/30wt%$ hBN ceramic is a feasible material upon which to apply semi-conductor components, and this study is very meaningful for determining correlations between material properties and machining performance.

• International Commerce and Information Review
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• v.7 no.3
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• pp.269-286
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• 2005

The exchange rate volatility has been increased since the time when the floating exchange rate system was introduced in Korea. As a result, the increase of the exchange rate volatility raised the risk in international trades in Korea. The purpose of this study in to study the feature of exchange rate volatility and the main sources of its increase and to confirm whether the exchange rate volatility influence export volume and price of Korea. In the first place, I measured exchange rate volatility with two methods. The one is descriptive statistic method such as the width of daily exchange rate fluctuation and the rate of exchange rate devaluation. The other is the time varying conditional variance of exchange rate. Then, I studied the sources of exchange rate volatility. In the second place, I defined the exchange rate volatility as the time varying conditional variance and estimated it by using elastic a approach model which shows exchange rate is affected by itself and its conditional variance, I estimated its effects on export volumes and prices of electric home appliances, information & communication equal and semi-conductor. The result of this study is as follows. With presumed result EU and Korea because is not the goods which is to substantial competition relationship, The effect where the relative value change of presumed result expression anger and the dollar of import and export function goes mad to the import and export of Korea the income compared to is to export and it is appearing a lot. The EU goods is sold more expensively the Korean goods than from about length being caused by American market of the dollar and the balance of trade of Korea is visible like being visible the improvement of single breadth. Because the relationship of competition is weak but substantially there is to a short term and expression - the effect where the dollar rate fluctuation is big in Korean trade there is a possibility of saying that widely known it is not.

• Journal of the Korean Vacuum Society
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• v.12 no.2
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• pp.93-104
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• 2003

For evaluation of durability of low vacuum pumps, it is required to examine the performance and degradation of low vacuum pumps. Pump degradation may result from abnormalities associated with the performance in many areas of pump operation. The diagnostics method can be used to monitor the pump performance in the semi-conductor process line. Based on the mechanical defect of the pump, the dynamic response and reliability of the system for performance test, and the dynamic characteristics of the pump were experimentally assessed. The theoretical work rate for the compression process in the pump was calculated, and then the efficiency of the pump associated with the power consumption was evaluated. This analysis will be useful in detecting pump degradation with increasing the power consumption. To determine the predominant factors of pump degradation, it is important to evaluate the entire pumping system. We studied vibration, dynamic pressure, pumping speed, and power consumption of low vacuum pumps. Our results can be utilized for the future research on the evaluating technology of durability of low vacuum pumps.

• Transactions of the Korean Society of Mechanical Engineers
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• v.17 no.1
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• pp.120-130
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• 1993

Generally, the machinability of materials that have a good mechanical properties is poor. For materials having a high strength, high toughness, high strength in high temperature and wear resistance, it is difficult to remove a chip from work materials. These properties are well shown in a Nickel, so this metal is used in machine materials, semi-conductor industry, metal mold and optical fields etc. But it is limitted in use because of high cost and poor machinability. In this study, the cutting of pure Nickel was conducted to examine wear of CBN, poly crystal diamond (PCD) and single crystal diamond (SCD) tools. From the result, the CBN tool is superior to poly crystal diamond tools or single crystal diamond tools in terms of tool wear and tool wear is predictable from experimental data base.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.341-341
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• 2012

Recently, oxide semi-conductor materials have been investigated as promising candidates replacing a-Si:H and poly-Si semiconductor because they have some advantages of a room-temperature process, low-cost, high performance and various applications in flexible and transparent electronics. Particularly, amorphous indium-gallium-zinc-oxide (a-IGZO) is an interesting semiconductor material for use in flexible thin film transistor (TFT) fabrication due to the high carrier mobility and low deposition temperatures. In this work, we demonstrated improvement of flexibility in IGZO TFTs, which were fabricated on polyimide (PI) substrate. At first, a thin poly-4vinyl phenol (PVP) layer was spin coated on PI substrate for making a smooth surface up to 0.3 nm, which was required to form high quality active layer. Then, Ni gate electrode of 100 nm was deposited on the bare PVP layer by e-beam evaporator using a shadow mask. The PVP and $Al_2O_3$ layers with different thicknesses were used for organic/inorganic multi gate dielectric, which were formed by spin coater and atomic layer deposition (ALD), respectively, at $200^{\circ}C$. 70 nm IGZO semiconductor layer and 70 nm Al source/drain electrodes were respectively deposited by RF magnetron sputter and thermal evaporator using shadow masks. Then, IGZO layer was annealed on a hotplate at $200^{\circ}C$ for 1 hour. Standard electrical characteristics of transistors were measured by a semiconductor parameter analyzer at room temperature in the dark and performance of devices then was also evaluated under static and dynamic mechanical deformation. The IGZO TFTs incorporating hybrid gate dielectrics showed a high flexibility compared to the device with single structural gate dielectrics. The effects of mechanical deformation on the TFT characteristics will be discussed in detail.

• Applied Microscopy
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• v.36 no.3
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• pp.155-163
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• 2006

The defects in a synthesized crystal of ${\alpha}-Al_2O_3$ used as substrate for growing of semi-conductor materials such as GaN were examined by the conventional transmission electron microscopy (TEM), Large Angle CBED and High-Angle Annular Dark Field (HAADF) STEM methods. The dominant defects found in the specimen are basal microtwins with the thickness of ${\sim}2\;to\;32 nm$ and the associated strong strain field at the interface of microtwin/matrix, basal dislocations and complex dislocations in the one of {$2\bar{1}\bar{1}3$} pyramidal slip plane. All these basal and pyramidal dislocations seem to be strong related to basal microtwins. It was also found that the density of defects is very uneven. In the certain area with the dimension of a few fm, the dislocation density is quite high as an order of ${/sim}10^{10}/cm^2, but the average density is roughly estimated to be less than ${\sim}10^5/cm^2, as is usually expected in general synthesized crystals.

• Journal of Energy Engineering
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• v.2 no.1
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• pp.95-103
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• 1993

A conceptual thermoelectric heat pump(cooling mode) of small capacity is designed. Its performance is investigated through parametric analysis. COP and cooling capacity decease as the ambient temperature increases with ${\mu}$, J, T$\sub$wi/, fixed. To design a system of fixed capacity comes to calculate ${\mu}$ and J when T$\sub$wi/, and T$\sub$a/ are given. As v is fixed by semi-conductor manufacturers, optimum combination of n and I should be searched for ν. Optimum current could be calculated using ${\mu}$-J curve and optimum value of ${\mu}$. COR$\sub$R/ increases as water flow rate increases and T$\sub$a/ decreases. The effect of heat transfer coefficient at hot(heat releasing) side is more significant than that at cold(heat absorbing) side.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.101-105
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• 2001

For high voltage XLPE power cables, semiconducting layers have been applied to prevent discharge at the interface between conductor and insulation, and/or insulation and external shielding layer. The semiconducting layers may be also effective to release electrical stress in the interface. The property of semiconducting layers are significantly related to the quality and reliability of power cables. Generally, these semiconducting layers are formed by extruding, the conductibility of the material is given by the carbon black mixed with base polymer. The life of power cables is depended on the smoothness of the interface between insulation and semiconducting layer. If the smoothness is no good, the life of power cables is shorter because the electrical stress and water tree is increased. The causes of no good smoothness are the void of the interface, the protrusions, the contaminants and impurities of the semiconducting layer. The selection and dispersion of the Carbon Black is the significant factor to determine the life of power cable in the manufacturing of semiconducting compound.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.394-394
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• 2011

급속한 산업의 발달은 심각한 환경오염 및 에너지 문제를 가져왔다. 이를 해결하기 위하여 무한한 에너지원인 태양에너지를 원천으로 하는 친환경 정화소재로서의 광촉매(photocatalyst)를 통하여 인류의 에너지를 확보하는 것에 대한 관심이 급격하게 증가하고 있는 추세이다. 현재 광촉매로 가장 많이 사용되는 $TiO_2$의 경우 뛰어난 광활성과 저렴한 가격, 광 안정성, 화학적 안정성을 가짐에도 불구하고, 3.2 eV라는 상대적으로 넓은 band gap을 가지기 때문에 약 386 nm보다 짧은 파장을 갖는 자외선만 흡수할 수 있다. 이로 인한 가시광 응답성의 부재를 해결하기 위해 수십년간 많은 연구가 진행되어 왔다. 따라서 본 연구에서는 ICP assisted pulsed DC reactive magnetron sputtering을 이용하여 $TiO_2$를 기반으로 하면서 가시광영역의 빛을 흡수하여 높은 효율을 얻을 수 있도록 Nitrogen doping, Low band gap semi-conductor sensitization 등의 방법을 사용하여 광촉매를 제작하였다. 시료의 chemical state와 crystallinity를 확인하기 위하여 X-ray photoelectron spectroscopy와 X-ray diffraction method를 이용하여 분석을 수행하였으며, 이러한 공정을 통해 제작된 $TiO_2$기반 광촉매의 가시광 응답성을 확인하기 위하여 UV/Vis 스펙트럼을 측정하였다. 또한 물 분해 장치(water splitting device)를 제작하여 수소와 산소 생성시 흐르는 전류를 측정하여 광특성을 평가하였다.