• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 하계학술대회 논문집 B
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• pp.1153-1155
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• 1993

This paper presents some experimental result of current limiting, fusing and short circuit interruption behavior by notch construction of thin copper film $35{\mu}m$ on epoxy substrate. A fuse-link having elements of copper film provided high-precision small holes by photo eatching process.

• 열처리공학회지
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• 제3권1호
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• pp.17-24
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• 1990

In this study, TiN film was deposited onto steel by R.F.-PACVD in order to investigate the influence of parameters on the adhesion strength between film and substrate. Experimental results showed that adhesion strength by SAT is different from by optical microscopy. Adhesion strength is increased when the deposition temperature increases and is influenced by R.F. power and electrode distance. Especially heat treatment on the substrate has influenced over the adhesion strength, so it showed the 22 Newtons in adhesion strength by SAT and adhesion strength is decreased when deposition thickeness is thick and hardness is high. Also if the film is thick and high hardness simultaneous, the film was delaminated seriously.

• 한국세라믹학회지
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• 제54권3호
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• pp.249-256
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• 2017

We design Ge-Al multilayer assemblies as anode materials for Li-ion batteries, in which Ge and Al thin films are alternately deposited by a radio sputtering method. By sandwiching Ge layers between Al layer, the cyclability, rate capability, and capacity of Ge are improved significantly. The success of the Ge-Al multilayer is attributed to the Al films. To maintain the integrity of electrical contact, Al acts as an elastic layer, which can expand or shrink with the Ge film upon lithiation or delithiation. In addition, the presence of the Al film on the surface can prevent direct contact of Ge and electrolyte, thereby reducing the growth of a SEI layer. Importantly, with high electrical and ionic conductivities, the Al film provides efficient electrical and ionic routes for electrons and Li-ions to access the Ge film, promoting a high specific capacity and high rate capability for Ge.

• 만화애니메이션 연구
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• 통권13호
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• pp.153-162
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• 2008

이 논문에서는 영화의 미장센 이론을 바탕으로 애니메이션 미장센을 분석하였다. 애니메이션의 미장센은 영화에서와 달리 그 활용범위가 굉장히 넓다. 이는 실사영화와 합성되어 영화의 장르를 발전시킨 계기가 되었으며 디지털기술의 빠른 성장은 영화의 미장센이론을 다시 정의하도록 강요하고 있다. 초창기 사실주의 감독들의 미장센 이론이 애니메이션 기법의 도입으로 더욱더 확장되어 디지털 영화에서의 미장센이론이 새롭게 제기되고 있다 몽타주이론의 편집에 의한 영상 미학이 아닌 한 프레임에서 보여주고자 하는 모든 요소들을 담고 있는 미장센은 애니메이션만의 차별화 된 미학으로 발전되어야 하며, 국내 애니메이션의 문제점인 연출력 부재의 현 상황을 미장센에 의한 연출력으로 극복되어야 할 것이다.

• Journal of Electrochemical Science and Technology
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• 제6권4호
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• pp.116-120
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• 2015

Lithium diffusivity of fluorine-free and -doped tin-nickel (Sn-Ni) film model electrodes with improved interfacial (solid electrolyte interphase (SEI)) stability has been determined, utilizing variable rate cyclic voltammetry (CV). The method for interfacial stabilization comprises fluorine-doping on the electrode together with the use of electrolyte including fluorinated ethylene carbonate (FEC) solvent and trimethyl phosphite additive. It is found that lithium diffusivity of Sn is largely dependent on the fluorine-doping on the Sn-Ni electrode and interfacial stability. Lithium diffusivity of fluorine-doped electrode is one order higher than that of fluorine-free electrode, which is ascribed to the enhanced electrical conductivity and interfacial stabilization effect.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.212-212
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• 2009

Thermoelectric devices were used to wide range of application. At present, increasing the efficiency of these devices, in particular, through the preparation of materials showing a high thermoelectric figure of merit, Z, $Bi_2Te_3$ and $Sb_2Te_3$ thin films on Si substrates are deposited by flash evaporation method for thermopile sensor applications. In order to enhance the thermoelectric properties of the thin film, annealing in high vacuum is carried out in the temperature range from 200 to $350^{\circ}C$. The microstructure of the film is investigated by XRD and SEM. The resistivity and Seebeck coefficient of the films are measured by Van der Pauw method and hot probe method respectively. At elevating annealing temperature, the crystallinity and thermoelectrical properties of films are improved by increasing the size of grains. At excessive high annealing temperatures, it is shown that Seebeck coefficient of films is decreased because of Te evaporation. By optimizing the annealing conditions, it is possible to obtain a high performance thin film with a thermoelectric properties.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.342-345
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• 2002

As the size of chip components and module decreases, new patteming method for fine line and geometry is needed. So far, in LTCC(Low Temperature Cofired Ceramic) process, screen printing method has been used generally. But screen printing method has some disadvantages as follows. First, the geometry including line, vias, etc. smaller than $100{\mu}m$ can't be evaluated easily. Second, the patterned dimension is different from designed value, which makes distortion in charactersitics of not only chip components but also modules. Thick film lithography has advantages of thick film screen printing process, low cost and thin film process, fine line feasibility. Using this method, the line with $30{\mu}m$ width and the geometry with expected dimension can be evaluated. In this study, the fine line with $35{\mu}m$ line/space is formed and the embedded capacitor with very small tolerance is developed using thick film lithography.

• 전기화학회지
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• 제13권1호
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• pp.19-33
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• 2010

초기 충전 과정에서 흑연 음극에 생성되는 표면피막은 리튬 이차전지의 중요한 구성 요소로 전지 반응은 표면피막의 본질에 크게 영향을 받는다. 따라서 표면피막의 물리화학적 성질을 이해하는 것은 매우 중요하다. 한편, 표면피막의 형성 반응은 흑연/전해질 계면에서 진행하는 매우 복잡한 계면 현상이며, 표면피막은 반응성이 높고 공기 중에서 불안정하기 때문에 리튬 이차전지의 전극 표면을 연구하는데 있어서 in-situ 실험 기술은 매우 중요하다. 이와 같은 점에서 전위가 제어된 상태에서 다양한 전기화학 반응이 진행하는 전극/용액 계면을 직접 관찰할 수 있는 전기화학적 원자간력 현미경(Electrochemical Atomic Force Microscopy, ECAFM)은 매우 유용한 도구이다. 본 총설에서는 흑연 음극에 생성되는 표면피막의 본질적 이해에 중점을 두어 표면피막의 생성기구 및 전해질과의 상관성에 관하여 in-situ ECAFM 분석 결과를 중심으로 하여 정리하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.47-48
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• 2005

The moving photocarrier grating(MPG) technique for the determination of the carrier mobilities and the recombination lifetime in a-Se:As films have been studied. The electron and hole drift mobility and the recombination lifetime of a-Se films with arsenic (As) additions have been obtained. We have found an increase in hole drift mobility and recombination lifetime, especially when 0.3% As is added into a-Se film. However, the electron mobility exhibits no observable change up to 0.5% As addition in a-Se films.0.3% As added a-Se film also exhibits the maximum short circuit current densities per laser intensity of $5.29\times10^{-7}$ A/W.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.47-47
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• 2008

P-type transparent semiconductor $SrCu_2O_2$ thin films have been prepared by RF sputtering using low-alkali glass for LCD and quartz as substrates. Single phase of $SrCu_2O_2$ powder was obtained by heating a stoichiometric mixture of CuO and $SrCO_3$ at 1223K for 96h under N2 gas flow, and target was fabricated at 1243K for 24h. Room temperature conductivity of the sintered body was about 0.02S/cm, and the activation energy in the temperature range of $-50^{\circ}C$~RT and RT~$150^{\circ}C$ were 0.18eV, 0.07eV, respectively. Effects of deposition pressure and post-annealing temperature on the electrical and optical properties of the obtained thin film have been investigated.