• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.557-560
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• 2000

Combination of SDB(Si-wafer Direct Bonding) and electrochemical etch-stop in TMAH anisotropic etchant can be used to create a variety of MEMS(Micro Electro Mechanical System). Especially, fabrication of SDB SOI structures using electrochemical etch-stop is accurate method to fabrication of 3D(three-dimensional) microstructures. This paper describes on the fabrication of SDB SOI structures with sealed cavity for MEMS applications and thickness control of active layer on the SDB SOI structure by electrochemical etch-stop. The flatness of fabricated SDB SOI structure is very uniform and can be improved by addition of TMAH to IPA and pyrazine.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.5
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• pp.431-436
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• 2000

This paper describes on the fabrication of a SOI substrate by SDB technology and electrochemical etch-stop. The surface of the thinned SDB SOI substrate is more uniform than that of grinding or polishing by mechanical method and this process was found to be a very accurate method for SOI thickness control. During electrochemical etch-stop leakage current versus voltage curves were measured for analysis of the open current potential(OCP) point the passivation potential(PP) point and anodic passivation potential. The surface roughness and the controlled thickness selectivity of the fabricated a SDB SOI substrate were evaluated by using AFM and SEM respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.126-129
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• 2000

This paper describes on the fabrication of a SOI substrate by SDB technology and electrochemical etch-stop. The surface of the thinned SDB SOI substrate is more uniform than that of grinding or polishing by mechanical method, and this process was found to be very accurate method for SOI thickness control. During electrochemical etch-stop, leakage current versus voltage curves were measured for analysis of the open current potential (OCP) point, the passivation potential (PP) point and anodic passivation potential. The surface roughness and the controlled thickness selectivity of the fabricated a SDB SOI substrate were evaluated by using AFM and SEM, respectively.

• Journal of Sensor Science and Technology
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• v.11 no.1
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• pp.54-59
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• 2002

This paper describes a new process technique for batch process of SOI(Si-on-Insulator) structures with buried cavities for MEMS(Micro Electro Mechanical System) applications by SDB(Si-wafer Direct Bonding) technology and electrochemical etch-stop. A low-cost electrochemical etch-stop method is used to control accurately the thickness of SOI. The cavities were made on the upper handling wafer by Si anisotropic etching. Two wafers are bonded with an intermediate insulating oxide layer. After high-temperature annealing($1000^{\circ}C$, 60 min), the SDB SOI structure with buried cavities was thinned by electrochemical etch-stop. The surface of the fabricated SDB SOI structure have more roughness that of lapping and polishing by mechanical method. This SDB SOI structure with buried cavities will provide a powerful and versatile substrate for novel microsensors arid microactuators.

• Steel and Composite Structures
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• v.19 no.2
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• pp.349-368
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• 2015

This paper presents a new algorithm to find the optimal distribution of steel diagonal braces (SDB) using artificial bee colony optimization technique. The four different objective functions are employed based on the transfer function amplitude of; the top displacement, the top absolute acceleration, the base shear and the base moment. The stiffness parameter of SDB at each floor level is taken into account as design variables and the sum of the stiffness parameter of the SDB is accepted as an active constraint. An optimization algorithm based on the Artificial Bee Colony (ABC) algorithm is proposed to minimize the objective functions. The proposed ABC algorithm is applied to determine the optimal SDB distribution for planar buildings in order to rehabilitate existing planar steel buildings or to design new steel buildings. Three planar building models are chosen as numerical examples to demonstrate the validity of the proposed method. The optimal SDB designs are compared with a uniform SDB design that uniformly distributes the total stiffness across the structure. The results of the analysis clearly show that each optimal SDB placement, which is determined based on different performance objectives, performs well for its own design aim.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1369-1371
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• 2001

This paper describes on thinning SDB SOI substrates by SDB technology and Electro-chemical etch-stop. The surface of the fabricated SDB SOI substrates is more uniform than that grinding or polishing by mechanical method, and this process is possible to accurate SOI thickness control. During Electrochemical etch-stop, leakage current versus voltage curves were measured for analysis of the open current potential (OCP) point and the passivation potential (PP) poin and determinated to anodic passivation potential. The surface roughness and selectively controlled thickness of the fabricated SOI substrates were analyzed by using AFM and SEM, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.362-365
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• 1999

This paper describes on thinning SDB SOI substrates by SDB technology and electrochemical etch-stop. The surface of the fabricated SDB SOI substrates is more uniform than that grinding or polishing by mechanical method, and this process is possible to accurate SOI thickness control. During Electrochemical etch-stop, leakage current versus voltage curves were measured for analysis of the open current potential (OCP) point and the passivation potential (PP) poin and determinated to anodic substrates were analyzed by using AFM and SEM, respectivelv.

• The Journal of the Korean Society for Microbiology
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• v.22 no.3
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• pp.301-307
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• 1987

A total of 42 strains of Candida albicans were examined for susceptibility to three antifungal agents, amphotericin B(AMB), 5-fluorocytosine(5-FC), and ketoconazole(KTZ), using defined medium, synthetic amino acid medium-fungal(SAAM-F), supplemented yeast nitrogen base(SYNB) and undefined medium Sabouraud's dextrose broth(SDB) and Kimmig broth media. A tube dilution method was used with minimum inhibitory concentrations(MICs) determined after incubation for 24 hour and 48 hours. All testes were performed in duplicate. In general, MICs were more reproducible after 48 hour of incubation. Forthermore, MICs determined after incubation for 48 hours were significantly higher than those determined after 24 hours. The actural MICs obtained with the different antifungal agents were clearly influenced by the test medium used. The rank order of AMB MICs according to the test medium was as follows: SAAM-F>SYNB>SDB>Kimmig broth. With 5-FC, the following pattern was observed: SYNB>SAAM-F>SDB>Kimmig borth. For ketoconazole, the MICs according to the test medium was SAAM-F>SDB>SYNB> Kimmig broth. In amphotericin B, the MICs mean value with the test medium was as follows: SDB, 0.24 mcg/ml; Kimmig broth, 0.29 mcg/ml; SYNB, 0.21 mcg/ml and SAAM-F, 0.15mcg/ml. The actural value of 5-FC was; SDB, 37.20 mcg/ml; Kimmig broth, 67.41mcg/ml; SYNB, 21.29 mcg/ml and SAAM-F, 24.61 mcg/ml and in ketoconazole, the MICs value was; SDB, 1.83 mcg/ml; Kimmig broth, 4.08 mcg/ml; SYNB, 1.95 mcg/ml and SAAM-F, 1.41 mcg/ml. The results of this investigation suggested that broth dilution susceptibility testing of yeast and yeast-like fungi are best performed with an incubation period of 48 hours. Furthermore, medium composition can significantly influence the results of such testing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.301-306
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• 2000

This paper describes on the fabrication of a SOI substrate by SDB technology and electrochemical etch-stop. The surface of the thinned SDB SOI substrate is more uniform than that of grinding or polishing by mechanical method, and this process was found to be a very accurate method for SOI thickness control. During electrochemical etch-stop, leakage current versus voltage curves were measured for analysis of the open current potential(OCP) point, the passivation potential(PP) point and anodic passivation potential. The surface roughness and the controlled thickness selectivity of the fabricated a SDB SOI substrate were evaluated by using AFM and SEM, respectively.

• International Journal of Naval Architecture and Ocean Engineering
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• v.7 no.3
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• pp.452-465
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• 2015

This paper presents the simplified welding distortion analysis method to predict the welding deformation of both plate and stiffener in fillet welds. Currently, the methods based on equivalent thermal strain like Strain as Direct Boundary (SDB) has been widely used due to effective prediction of welding deformation. Regarding the fillet welding, however, those methods cannot represent deformation of both members at once since the temperature degree of freedom is shared at the intersection nodes in both members. In this paper, we propose new approach to simulate deformation of both members. The method can simulate fillet weld deformations by employing composite shell element and using different thermal expansion coefficients according to thickness direction with fixed temperature at intersection nodes. For verification purpose, we compare of result from experiments, 3D thermo elastic plastic analysis, SDB method and proposed method. Compared of experiments results, the proposed method can effectively predict welding deformation for fillet welds.