Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Fabrication of a SDB SOI Substrate by Electrochemical Etch-stop

전기화학적 식각정지에 의한 SDB SOI기판의 제작

  • 정귀상 (동서대학교 정보통신공학부) ;
  • 강경두 (부경대학교 전자공학과)
  • Published : 2000.04.01
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Abstract

This paper describes on the fabrication of a SOI substrate by SDB technology and electrochemical etch-stop. The surface of the thinned SDB SOI substrate is more uniform than that of grinding or polishing by mechanical method and this process was found to be a very accurate method for SOI thickness control. During electrochemical etch-stop leakage current versus voltage curves were measured for analysis of the open current potential(OCP) point the passivation potential(PP) point and anodic passivation potential. The surface roughness and the controlled thickness selectivity of the fabricated a SDB SOI substrate were evaluated by using AFM and SEM respectively.

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