• Journal of the Korean Society of Radiology
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• v.15 no.6
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• pp.861-867
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• 2021

Since SBRT takes up to 1 hour from 30 minutes to treatment fraction once or three to five times, there is a possibility of setup error during treatment. To reduce these set-up errors and give accurate doses, we intend to evaluate the usefulness of pre-treatment and post-treatment error values by imaging CBCT again to determine postural movement due to pre-treatment coordinate values using pre-treatment CBCT. On average, the range of systematic errors was 0.032 to 0.17 on the X and Y,Z axes, confirming that there was very little change in movement even after treatment. Tumor centripetal changes (±SD) due to respiratory tuning were 0.11 (±0.12) cm, 0.27 (±0.15) cm, and 0.21 cm (±0.31 cm) in the X, Y and Z directions. The tumor edges ±SD were 0.21 (±0.18) cm, 0.30 (±0.23) cm, and 0.19 cm (±0.26) cm in the X, Y and Z directions. The (±SD) of tumor-corrected displacements were 0.03 (±0.16) cm, 0.05 (±0.26) cm, and 0.02 (±0.23) cm in RL, AP, and SI directions, respectively. The range of the 3D vector value was 0.11 to 0-.18 cm on average when comparing pre-treatment and CBCT, and it was confirmed that the corrected set-up error was within 0.3 cm. Therefore, it was confirmed that there were some changes in values depending on some older patients, condition on the day of treatment, and body type, but they were within the significance range.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.2 s.344
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• pp.13-17
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• 2006

Pentacene channel for organic thin film transistor was deposited on the SiOC film by thermal evaporation. The growth of pentacene is related with the Diels-Alder reaction and the nucleophilic reaction by the thermal induction. The surface is an important factor to control the recursive Diels-Alder reaction for growing of pentacene on SiOC far The terminal C=C double bond of pentacene molecule was broken easily as a result of attack of the nucleophilic reagents on the surface of SiOC film. The nucleophilic reaction can be accelerated by increasing temperature on surface, and it maks pentacene to grow hardly on the SiOC film with a flow rate ratio of $O_2/(BTMSM+O_2)=0.5$ due to its inorganic property. The nucleophlic reaction mechanism is $SN_2(bimolecular nucleophilic substitution)$ type.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.2 s.332
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• pp.15-22
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• 2005

Using the existing analog circuits, required resistor matching and Poly-Si TFT characteristics are investigated for the implementation of analog circuits to be integrated on System-on-Glass. Matching requirements on resistor values, threshold voltage and mobility of poly-Si TFT are derived as a function of the resolution of display system. Also, the effective mobility of poly-Si TFT required for the realization of source driver is analyzed for various panel sizes.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.1
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• pp.20-28
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• 2003

In this paper, we present results of the comparative analysis of the flicker phenomena in the poly-Si TFT-LCD and a-Si:H TFT-LCD arrays for the development and manufacturing of wide-area and high-quality TFT-LCD displays. We used four different types of TFTs; a-Si:H TFT, excimer laser annealed (ELA) poly-Si TFT, silicide mediated crystallization (SMC) poly-Si TFT, and counter-doped lateral body terminal (LBT), poly-Si TFT. We defined the electrical quantity of the flicker so that we could compare the flickers quantitatively for four different 40" UXGA TFT-LCDs. We identify three factors contributing to the flicker, such as charging time, kickback voltage and leakage current, and analyze how much each of three factors give rise to the flincker in the different TFT-LCD arrays. In addition, we suggest and show that, in the case of the poly-Si TFT-LCD arrays, the low-level (minimum) gate voltages should be carefully chosen to minimize the flicker because of their larger leakage currents compared with a-Si TFT-LCD arrays.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.10 s.352
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• pp.61-67
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• 2006

We developed a constant current source which is insensitive to threshold voltage variation caused by irregular grain boundary distribution in polycrystalline silicon. The proposed current source has superior saturation characteristics over wide range of input voltages as well as small current error compared to the previously reported Vth compensated sources. We measured the circuit performance and error in current due to parameter variation by using HSPICE.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.7
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• pp.481-485
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• 2003

Amorphous silicon (a-Si:H) based TFT process has been studied at the maximum temperature of 15$0^{\circ}C$ with 25${\mu}{\textrm}{m}$ thick flexible and adhesive tape type polyimide foil substrate, which has benefit on handling a rugged, flexible plastic substrate trough sticking simply it to glass. This paper summarize the process procedure of the TFT on the plastic substrate and shows its electrical characteristics in comparison with glass substrate using primarily the ON/OFF current ratio and the field effect mobility as the quality criterion. The a-SiN:H coating layer played an important role in decreasing surface roughness of plastic substrate, so leakage current of TFT was decreased and mobility was increased. The results show that high quality a-Si:H TFTs can be fabricated on the plastic substrates through coating a rough plastic surface with a-SiN:H.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.6
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• pp.1-5
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• 2009

Analytical expressions for breakdown voltage and specific on-resistance of 6H-SiC PN diodes have been derived successfully by extracting an effective ionization coefficient from ionization coefficients for electron and hole in 6H-SiC. The breakdown voltages induced from our analytical model are compared with experimental results. The variation of specific on-resistance as a function of doping concentration is also compared with the one reported previously. Good fits with experimental results are found for the breakdown voltage within 10% in error for the doping concentration in the range of $10^{15}{\sim}10^{18}cm^{-3}$. The analytic results show good agreement with the numerical data for the specific on-resistance in the region of $5{\times}10^{15}{\sim}10^{16}cm^{-3}$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.6 s.336
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• pp.17-22
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• 2005

Organic-inorganic hybrid type thin films are the next generation candidates as low-k materials. SiOC films are analyzed the bonding structure by the red and blue chemical shift using the fourier transform infraredspectra. Conventional chemical shift of organic chemistry is a red shift, but hybrid type SiOC films were observed the red and blue shift. The chemical shift originates from the interaction between the C-H bond and high electronegative atoms, and the blue shift in SiOC films is caused by the porosity due to the increase of the electron rich group such as much methyl radicals. The bonding structures of SiOC films are also divided into the Si-O-C cross-link structure and the Si-O-C cage-link structure due to the chemical shifts. The Si-O-C cross-link structure progressed the adhesion attributed to the C-H bond elongation in the reason of the red shift, and the dielectric constant also decreases.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.3
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• pp.9-14
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• 2004

In this study, Si anisotropic etching characteristics of tetramethylammonium hydroxide (TMAH)/ ammonium persulfate(AP)/isopropyl alcohol(IPA) solutions were investigated to realize the optimum structure of a diaphragm for the piezoresistive pressure sensor application. Due to its low toxicity and its high compatibility with the CMOS processing, TMAH was used as Si anisotropic etchants. The variations of Si etch rate on the etching temperature, TMAH concentration, and etching time were obtained. With increasing the etching temperature and decreasing TMAH concentrations, the Si etch rate is increased while a significant non-unifonnity exists on the etched surface because of formation of hillocks on the (100) surface. The addition of IPA to TMAH solution leads to smoother etched surfaces but, makes the Si etch rate lower. However, with the addition of AP to TMAH solution, the Si etch rate is increased and an improvement in flatness on the etching front is observed. The Si etch rate is also maximized with increasing the number of addition of AP to TMAH solution per one hour. The Si square membranes of 20${\mu}{\textrm}{m}$ thickness and l00-400${\mu}{\textrm}{m}$ one-side length were fabricated successfully by applying optimum Si etching conditions of TMAH/AP solutions.

• Journal of rehabilitation welfare engineering & assistive technology
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• v.10 no.2
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• pp.147-153
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• 2016

The aims of this study were to evaluate the joint coordination between hip and knee joints in the transfemoral amputees, and its symmetry between sound and prosthetic limbs. Seven transfemoral amputees ($46.4{\pm}10.7-year-old$, $174.8{\pm}3.5cm$, $78.3{\pm}9.7kg$) and 7 able bodies ($24.0{\pm}4.5-year-old$, $174.5{\pm}5.9cm$, $66.9{\pm}9.4Kg$) participated in this study. They walked at a self-selected walking speed across a 10m level ground. Simultaneously angle and angular velocity in the hip and knee joint were measured by motion analysis system. Then continuos relative phase(CRP), standard deviations of CRP (CRP_SD) and symmetry index(SI) were calculated. In able bodies, there were no differences of the parameters between left and right limb(all p>0.05). However, significant differences between sound and prosthetic limb in most of the parameters, except for CRP for stance phase were shown (all p<0.05). There were differences in all SI between transfemoral amputees and able bodies (p<0.05). In conclusion, joint coordination was altered in transfemoral amputee during level walking and shown in interlimb asymmetry.