• Proceedings of the Materials Research Society of Korea Conference
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• 1998.11a
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• pp.147-147
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• 1998

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.7
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• pp.557-562
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• 2000

160nm thick amorphous Si and polycrystalline Si were each deposited on to 10nm thick SiO$_2$, Co monolayer and Co/Ti bilayer were sequentially evaporated to form Co-polycide. Then MOS capacitors were fabricated by BF$_2$ ion-implantation. The characteristics of the fabricated capacitor samples depending upon the drive-in annel conductions were measured to study the effects of thermal stability of CoSi$_2$and dopant redistribution on electrical properties of Co-polycide gates. Results for capacitors using Co/Ti bilayer and drive-in annealed at 80$0^{\circ}C$ for 20~40sec. showed excellent C-V characteristics of gate electrode.

• The Transactions of the Korea Information Processing Society
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• v.4 no.5
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• pp.1380-1390
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• 1997

This paper presents a systolic array design method which derives 1 or 2 dimensional optimal planar systolic arrays from a given n dimensional problem represented as a regular recurrence equation and its implementation called a systolic array design system(SADS).The SADS parses a regular recurrence equation and gets the information such as problem space, data dependence vectors. and intial data positions. Systolic arrays are automati-cally derived by the space-time transformation form the information to be abeaired in the parsing phase.The SADS allows us to verify the parallel execution of the derived systolic aooay through the graghical interface.

• Korean Journal of Materials Research
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• v.9 no.11
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• pp.1117-1122
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• 1999

Amorphous Si and Co/Ti bilayers were sequentially evaporated onto 5- 10nm thick $\textrm{CoSi}_{2}$ and rapidly thermal-annealed(RTA) to form Co-polycide electrodes. Then, MOS capacitors were fabricated by doping poly-Si using SADS method. The C-V and leakage-current characteristics of the capacitors depending upon the RTA conditions were measured to study the effects of thermal stability of $\textrm{CoSi}_{2}$ and dopant redistribution on electrical properties of Co -polycide gates. Capacitors RTAed at $700^{\circ}C$ for 60-80 sec., showed excellent C-V and leakage-current characteristics due to degenate doping of poly-Si layers. But for longer time or at higher temperature, their electrical properties were degraeded due to $\textrm{CoSi}_{2}$ decomposition and subsequent Co diffusion. When making Co-polycide gate electrodes by SADS, not only degenerate doping of poly-Si layer. but also suppression of have been shown to be very critical.

• Korean Journal of Materials Research
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• v.11 no.9
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• pp.776-780
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• 2001

$SiO_2$ and polycrystalline Si layers were sequentially grown on (100) Si. NiSi was formed on this substrate from a 20nm Ni layer or a 20nm Ni/5nm Ti bilayer by rapid thermal annealing (RTA) at $300~500^{\circ}C$ to compare thermal stability. In addition, MOS capacitors were fabricated by depositing a 20nm Ni layer on the Poly-Si/$SiO_2$substrate, RTA at $400^{\circ}C$ to form NiSi, $BF_2$ or As implantation and finally drive- in annealing at $500~800^{\circ}C$ to evaluate electrical characteristics. When annealed at $400^{\circ}C$, NiSi made from both a Ni monolayer and a Ni/Ti bilayer showed excellent thermal stability. But NiSi made from a Ni/Ti bilayer was thermally unstable at $500^{\circ}C$. This was attributed to the formation of insignificantly small amount of NiSi due to suppressed Ni diffusion through the Ti layer. PMOS and NMOS capacitors made by using a Ni monolayer and the SADS(silicide as a dopant source) method showed good C-V characteristics, when drive-in annealed at $500^{\circ}C$ for 20sec., and$ 600^{\circ}C$ for 80sec. respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.473-476
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• 1999

PMOS capacitors with Ce-policide electrode were fabricated by the SADS method to study the effects of activation condition on the C-V characteristics. For the activation temperature of $600^{\circ}C$ , the capacitor using CoSi$_2$ formed from Co/Ti bilayer as diffusion source showed excellent C-V properties and the increase in V$_{th}$ with the increasing activation time. But impurties into the oxide.e.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.449-452
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• 1999

NiSi were formed from either Ni monolayer or Ni/Ti bilayer and the SADS method was applied to fabricated PMOSFET with Ni-polycide gate electrodes. PMOSFET made from Ni monolayer showed thermal stability unto 300~40$0^{\circ}C$ for 600sec., and excellent C-V characteristics for long time of drive-in anneal than PMOSFET made from Ni/Ti bilayer. This was attributed to easier decomposition and subsequent Ni diffusion to SiO$_2$ layer, probably due to the presence of Ti unreducing process

• The Journal of Pediatrics of Korean Medicine
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• v.20 no.2
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• pp.147-175
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• 2006

Objective : This study is to investigate the method for assesment and diagnosis of ADHD, especially focusing on behavior rating scales. Methods : We searched the recent date of the publication and paper in ADHD. Results : For Assesment and Diagnosis of ADHD, various method such as interview with parents, child and teacher, behavior observation, behavior rating scales and neuropsychological test are used. The structured interview consists of the restrictive questions and response, and then have diagnostic algorithm, consequently can be used by untrained clinicians. Of the structured interview, standardization of K-SADS in Korean version is finished. Behavior rating scales, the form of parent, teacher and self-report questionnaires, are used as diagnosis and treatment evaluation of ADHD. Behavior rating scales consist of both ADHD-specific scales and broad-band scales designed to screen for various symptoms (including ADHD symptoms). ADHD-specific scales are useful in differential diagnosis, discrimination of subtype, treatment evaluation, However, broad-band scales are useful in preliminary examination. The neuropsychological tests can evaluate attention deficit and effect of attention deficit on cognitive function and academic performance. The neuropsychological tests also used in diagnosis and treatment evaluation of ADHD. Conclusion : For Assesment and Diagnosis of ADHD, various method are used, especially behavior rating scales are both useful and simple tool for diagnosis and treatment evaluation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.11
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• pp.908-913
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• 2000

CoSi$_2$/p+/n diodes(bilayer diodes) were fabricated by using epitaxial CoSi$_2$grown from Co/Ti bilayer as a diffusion source. The I-V characteristics of p+/n diodes were measured and compared with those of diode made from Co monolayer (monolayer diode). Monolayer diodes showed typical p+n junction characteristics with the leakage current of as low as 10$^{-12}$ A and forward current 6-orders higher than the leakage current, when drive-in annealed at 90$0^{\circ}C$ for 20 sec.. On the other hand, bilayer diodes showed the Schottky-like behaviors with forward currents rather higher than those of monolyer diodes, but with too high leakage currents, when drive-in annealed at $700^{\circ}C$ or higher. However, when the annealing temperature was lowered to $700^{\circ}C$ and annealing time was increased to 60 sec., the leakage current was reduced to 10$^{-11}$ A and thus sho3wed typical diode characteristics. The high leakage currents for diodes annealed at $700^{\circ}C$ or higher was attributed to Shannon contacts formed due to unremoved Co-Ti-Si precipitates. But when annealed at 50$0^{\circ}C$, B ions diffused in the direction of the surface layer, and thus the leakage currents were reduced by removing Shannon contacts.

• Journal of the Korean Academy of Child and Adolescent Psychiatry
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• v.15 no.2
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• pp.178-184
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• 2004

Objectives : This study was conducted to investigate the association of the COMT polymorphism with the TD in Korean sample of families with TD probands. The relationship between risk alleles and specific clinical features (tic severity, comorbidity, drug response) was also explored. Method : Patients were recruited from the Tic Disorder clinic at the Child & Adolescent Psychiatric Division of Seoul National University Hospital and assessed through 2 stage evaluation. Firstly, all the patients and parents received semistructured interview using Korean version of K-SADS-PL. Secondly all the patients received clinical interview and tic severity assessment with Korean version of YGTSS. The subjects in control group were recruited from the health promotion center in out hospital and were evaluated by SCL-90 and SCID-IV. Through these process, total of 42 children and adolescents with TD, their 84 parents and 86 control subjects were finally recruited. Genotyping for The Val158Met polymorphism of the COMT gene was done by standardized method. After collection of genetic data of all the patients, parents and control subjects, case-control comparison and tranmission dysequilibrium test was executed by SPSS version 11. Result : From the case-control comparison, the frequency of L-allele and LL genotype was significantly higher in TD group. However, no differences were found from the TDT. No significant differences were found in in family history of tic, ADHD, OCD, drug response and comorbid conditions among the three different genotypes in patients with TD. Conclusion : Though this study results should be interpreted cautiously due to small sample size and negative finding in TDT test, this study is the first report that there is positive association between the functional polymorphism of COMT gene the TD.