Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Electrical Properties of Cobalt Polycide Gate

코발트 폴리사이드 게이트의 전기적 특성

  • 정연실 (수원대학교 전자재료공학과) ;
  • 정시중 (수원대학교 전자재료공학과) ;
  • 김주연 (수원대학교 전자재료공학과) ;
  • 배규식 (수원대학교 전자재료공학과)
  • Published : 1999.05.01
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Abstract

PMOS capacitors with Ce-policide electrode were fabricated by the SADS method to study the effects of activation condition on the C-V characteristics. For the activation temperature of $600^{\circ}C$ , the capacitor using CoSi$_2$ formed from Co/Ti bilayer as diffusion source showed excellent C-V properties and the increase in V$_{th}$ with the increasing activation time. But impurties into the oxide.e.

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