Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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C-V Characteristics of Cobalt Polycide Gate formed by the SADS(Silicide As Diffusion Source) Method

SADS(Siliide As Diffusion Source)법으로 형성한 코발트 폴리사이트 게이트의 C-V특성

  • 정연실 (수원대학교 전자재료공학과) ;
  • 배규식 (수원대학교 전자재료공학과)
  • Published : 2000.07.01
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Abstract

160nm thick amorphous Si and polycrystalline Si were each deposited on to 10nm thick SiO$_2$, Co monolayer and Co/Ti bilayer were sequentially evaporated to form Co-polycide. Then MOS capacitors were fabricated by BF$_2$ ion-implantation. The characteristics of the fabricated capacitor samples depending upon the drive-in annel conductions were measured to study the effects of thermal stability of CoSi$_2$and dopant redistribution on electrical properties of Co-polycide gates. Results for capacitors using Co/Ti bilayer and drive-in annealed at 80$0^{\circ}C$ for 20~40sec. showed excellent C-V characteristics of gate electrode.

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