• 한국전기전자재료학회논문지
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• 제22권10호
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• pp.808-813
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• 2009

Indium nitride thin films were deposited by the radio-frequency reactive magnetron sputtering method. The indium target was sputtered by the mixture flow ratio of $N_2$ to Ar, 9:1. The effects of growth temperature on the structural, optical, and electrical properties of the films were investigated. With increasing the growth temperature, the crystallinity of the films was improved, and the crystalline size was increased. The energy bandgap for the film grown at $25^{\circ}C$ was 3.63 eV, and the bandgap showed an increasing tendency on the growth temperature. The carrier concentration, Hall mobility and electrical resistivity of the films depended significantly on the growth temperature and the maximum Hall mobility of $32.3\;cm^2$/Vsec was observed for the film grown at $400^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.997-1000
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• 2001

Pb(Zr$\sub$0.52/Ti$\sub$0.48/)O$_3$(PZT) thin films have been prepared by rf-magnetron sputtering methods and investigated the structural and electrical properties. In order to investigate the effects of sputtering conditions, input power was controlled during deposition. Crystallization process and microstructure of PZT thin films were largely affected by input power. Highly crystallized PZT films with the perovskite structure were successfully obtained on Pt/Ti bottom electrode. The dielectric constants and polarization of PZT thin films were increased with increasing input power, and the coercive electric field was decreased with increasing input power . The dielectric constant of PZT thin films with input power 150 W was 966 at 1 kHz. we, authors, proposed that preferred orientation of PZT thin films were controlled by input power in sputtering methods.

• 한국진공학회지
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• 제5권2호
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• pp.119-126
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• 1996

The effect of the $O_2$ concentration in the sputtering gas mixture, substate temperature and Ar pressure on the structural and optical properties of 3 mol% YSZ and 8 mol% YSZ thin films deposited by RF magnetron sputtering were investigated . The films were observed to have various crystal structures with different compositions in accordance with the type of the target materials. The size of fine grain-like particles decreased wiht increasing the $O_2$ concentration in the sputtering gas in the case of 3mol% YSZ, while it increased in the case of 8 mol% YSZ . However, the average opticla transmission of 8mol% YSZ, despite of thicker thickness. was higher than that of 3 mol% YSZ. Furthermore, the values of refractive index of 3mol% YSZ increased with increasing the $O_2$ concentration in the sputtering gas on the contrary to those of the 8 mol% YSZ. However, the transmission spectra of 8 mol% YSZ films were not strongly influenced by the substrate temperature and Ar pressure, whereas the refractive index of the YSZ films were strongly affected by the sputtering parameters.

• 한국표면공학회지
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• 제35권2호
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• pp.113-121
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• 2002

We have investigated insulating properties of $SiO_2$ interlayer for the thin film strain gauge, which were prepared by RF magnetron sputtering method in various deposition conditions, such as Ar pressure, gas flow rates and sputtering gases. SEM, AFM and FT-IR techniques were used to analyze its structures and composition. As the Ar pressure and the flow rate increased, the insulating interlayer showed low insulating resistance due to its porous structure and defects. Oxygen deficiency in $SiO_2$ was decreased as fabricated by hydrogen reactive sputtering. We could enhance the surface mobility of sputtered adatoms by using Ar/$H_2$ sputtering gas and obtain a good surface roughness and insulating property. The optimum insulating resistance of 9.22 G$\Omega$ was obtained in Ar/30% $H_2$ mixed gas, flow rate 10sccm, and 1mTorr.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2006년도 춘계학술발표대회 및 제10회 신소재 심포지엄 논문개요집
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• pp.23.1-23.1
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• 2006

• 한국재료학회:학술대회논문집
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• 한국재료학회 1998년도 추계학술발표강연 및 논문개요집
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• pp.42-42
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• 1998

• 한국진공학회지
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• 제12권4호
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• pp.269-274
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• 2003

The electrical, optical and structural properties of ZnNiO thin _ films deposited on Si substrates using rf-magnetron sputtering method have been investigated before and after the thermal annealing processes. The crystallinity of the ZnNiO thin film become degraded with increasing the Ni contents. This is mainly because the lattice of the thin film was expanded due to the oxygen-deficient conditions. Concerning the electrical properties of the thin film, the carrier concentration increases ($6.81\times10^{14}\textrm{cm}^{-2}$) and Hall mobility decreases (36.3 $\textrm{cm}^2$/Vㆍs) with higher doping concentration of Ni. However, the carrier concentration and Hall mobility became low ($1.10\times10^{14}\textrm{cm}^2$ and high (209.6 $\textrm{cm}^2$/Vㆍs), respectively, after the thermal annealing process at $1000 ^{\circ}C$. We also observed a strong luminescene center peaking at 546 nm in photoluminescence spectra, which was caused by a deep level center in the ZnO band gap with oxygen deficient ZnNiO structure.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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• pp.38-38
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• 2003

PTO/PZO 초격자 박막은 박막 계면에 응력이 발생하여 기존의 박막처럼 size effect가 적용되지 않고 두께가 감소해도 높은 유전상수를 갖는다. Antiferroelectric PbZrO$_3$(PZO)와 ferroelectric PbTiO$_3$(PTO)를 적층 성장시킨 초격자는 400도에서 성장한 (100) Pt/SiO$_2$기판 위에 rf magnetron sputtering으로 증착하였다. PTO/PZO의 증착 주기는 30(PTO $_{4unti cells}$/PZO $_{4unti cells}$) 에서 1(PTO $_{125unti cells}$/PZO $_{125unti cells}$)까지 두께의 변화를 주어 준비했고 초격자 박막의 전체두께는 100nm로 고정시켰다. XRD결과, PTO/PZO는 주기에 따라 초격자의 특성인 main peak과 satellite peak을 관찰 할 수 있었다. 초격자의 주기가 감소함에 따라 2$\theta$값이 증가하고 평균 d 값이 감소되면서 PTO층에 뒤틀림이 증가하였다. PTO층의 뒤틀림 증가로 인해 superlattice의 주기가 증가함에 따라 초격자의 유전율이 증가하였고 강유전성이 향상되었다.향상되었다.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2006년도 추계학술대회 발표 논문집
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• pp.51-55
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• 2006

ITO/Ag/AZO and AZ0/Ag/ITO multi-layer films deposited on glass substrate by RF magnetron sputtering have a much better electrical properties than ITO and AZO single-layer films. The multi-layer structure was consisted of three layers of ITO, Ag and AZO. The optimum working pressure of AZO layers deposition was determined to be $1.0{\times}10^{-2}$ torr for high optical transmittance and good electrical conductivity. The electrical and optical properties of sub/IT0/Ag/AZO were higher than those of sub/AZ0/Ag/ITO multi-layer films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.411-415
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• 2002

Precision resistors were prepared by controlling the concentration of Ni and Cr deposited on cylindrical alumina substrates (diameter: 1.7mm, length: 5.5mm). Deposited films were analyzed with FESEM, AES, and AFM. As the amount of Cr in the film increases, the TCR was shifted to negative direction.