Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Effects of Deposition Temperature on the Properties of InN Thin Films Grown by Radio-frequency Reactive Magnetron Sputtering

증착 온도가 RF 반응성 마그네트론 스퍼터링법으로 성장된 InN 박막의 특성에 미치는 영향

  • 조신호 (신라대학교 전자재료공학과)
  • Received : 2009.07.27
  • Accepted : 2009.09.04
  • Published : 2009.10.01
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Abstract

Indium nitride thin films were deposited by the radio-frequency reactive magnetron sputtering method. The indium target was sputtered by the mixture flow ratio of $N_2$ to Ar, 9:1. The effects of growth temperature on the structural, optical, and electrical properties of the films were investigated. With increasing the growth temperature, the crystallinity of the films was improved, and the crystalline size was increased. The energy bandgap for the film grown at $25^{\circ}C$ was 3.63 eV, and the bandgap showed an increasing tendency on the growth temperature. The carrier concentration, Hall mobility and electrical resistivity of the films depended significantly on the growth temperature and the maximum Hall mobility of $32.3\;cm^2$/Vsec was observed for the film grown at $400^{\circ}C$.

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References

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