• 제목/요약/키워드: Retrograde

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MeV 이온주입에 의한 매입층을 갖는 BILLI retrograde well과 latchup 특성 (Latchup characteristics of BL/BILLI retrograde twin well CMOS with MeV ion implanted Bored Layer)

  • 김종관;김인수;김영호;신상우;성영권
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1997년도 하계학술대회 논문집 C
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    • pp.1270-1273
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    • 1997
  • We have investigated the latchup characteristics of BL/BILLI retrograde twin well CMOS that has the high energy ion implanted buried layer to intend for more improvement of latchup compare to conventional retrograde well and BILLI structures. We explored the dependence of various latchup characteristics such as n+ trigger latchup and p+ trigger latchup on the buried layer implant doses. We show various DC latchup characteristics that allow us to evaluate each technology and suggest guidelines for the reduction of latchup susceptibility.

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MeV 이온주입에 의한 Retrograde Triple-well 형성시 발생하는 결함제어 (Control of Defect Produced in a Retrograde Triple Well Using MeV Ion Implantation)

  • 정희석;고무순;김대영;류한권;노재상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 추계학술대회 논문집
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    • pp.17-20
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    • 2000
  • This study is about a retrograde triple well employed in the Cell tr. of next DRAM and flash memory. Triple well structure is formed deep n-well under the light p-well using MeV ion implantation. MeV P implanted deep n-well was observed to show greatly improved characteristics of electrical isolation and soft error. Junction leakage current, however, showed a critical behavior as a function of implantation and annealing conditions. {311} defects were observed to be responsible for the leakage current. {311} defects were generated near the R$\_$p/ (Projected range) region and grown upward to the surface during annealing. This is study on the defect behavior in device region as a function of implantation and annealing conditions.

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고 에너지 이온 주입된 CMOS 쌍 우물 구조의 레치업 면역성 예측을 위한 TCAD 모의실험 연구 (A Study on the TCAD Simulation to Predict the Latchup Immunity of High Energy Ion Implanted CMOS Twin Well Structures)

  • 송한정;김종민;곽계달
    • 한국전기전자재료학회논문지
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    • 제13권2호
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    • pp.106-113
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    • 2000
  • This study describes how a properly calibrated simulation method could be used to investigate the latchup immunity characteristics among the various high energy ion implanted CMOS twin well (retro-grade/BILLI/BL) structures. To obtain the accurate quantitative simulation analysis of retrograde well, a global tuning procedure and a set of grid specifications for simulation accuracy and computational efficiency are carried out. The latchup characteristics of BILLI and BL structures are well predicted by applying a calibrated simulation method for retrograde well. By exploring the potential contour, current flow lines, and electron/hole current densities at the holding condition, we have observed that the holding voltage of BL structure is more sensitive to the well design rule (p+to well edge space /n +to well edge space) than to the retrograde well itself.

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저전력 분야 응용을 위한 32nm 금속 게이트 전극 MOSFET 소자의 게이트 workfunction 의 최적화 (Gate Workfunction Optimization of a 32 nm Metal Gate MOSFET for Low Power Applications)

  • 오용호;김영민
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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    • pp.1974-1976
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    • 2005
  • The feasibility of a midgap metal gate is investigated for 32nm MOSFET low power applications. The midgap metal gate MOSFET is found to deliver a driving current as high as a bandedge gate one for the low power applications if a proper retrograde channel is used. An adequate design of the retrograde channel is essential to achieve the performance requirement given in ITRS roadmap. In addition, a process simulation is run using halo implants and thermal processes to evaluate the feasibility of the necessary retrograde profile in manufacturing environments. From the thermal budget point of view, the bandedge metal gate MOSFET is more vulnerable to the following thermal process than the midgap metal gate MOSFET since it requires a steeper retrograde doping profile. Based on the results, a guideline for the gate workfunction and the channel profile in the 32 nm MOSFET is proposed.

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Portal cavernography during endoscopic retrograde cholangiopancreatography: from bilhemia to hemobilia

  • Rawad A. Yared;Paraskevas Gkolfakis;Arnaud Lemmers;Vincent Huberty;Thierry Degrez;Jacques Deviere;Daniel Blero
    • Clinical Endoscopy
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    • 제56권4호
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    • pp.521-526
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    • 2023
  • Portobiliary fistulas are rare but may lead to life-threatening complications. Biliary plastic stent-induced portobiliary fistulas during endoscopic retrograde cholangiopancreatography have been described. Herein, we present a case of portal cavernography and recurrent hemobilia after endoscopic retrograde cholangiopancreatography in which a portobiliary fistula was detected in a patient with portal biliopathy. This likely indicates a change in clinical presentation (from bilhemia to hemobilia) after biliary drainage that was successfully treated by placement of a fully covered, self-expandable metallic stent.

차세대 CMOS구조에서 고에너지 이온주입에 의한 래치업 최소화를 위한 모델 해석 (An Analysis on the Simulation Modeling for Latch-Up Minimization by High Energy Implantation of Advanced CMOS Devices)

  • 노병규;조소행;오환술
    • 전자공학회논문지D
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    • 제36D2호
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    • pp.48-54
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    • 1999
  • 차세대 CMOS용 구조에서 래치업 특성을 최소화하는 고에너지 이온주입을 이용한 retrograde well과 게더링(매몰층)의 최적 공정 설계 변수 값들을 구했다. 본 논문에서는 두 가지의 모의 모델 구조를 제안하고, Silvaco사의 Athena와 Atlas 툴에 의한 모의실험 결과를 비교 분석하였다. 첫 번째 모델은 게더링층과 retrograde well,을 조합한 구조이며 트리거전류가 600 ${\mu}A/{\mu}m$ 이상의 결과를 얻었고, 두 번째 모델은 twin retrograde well을 이용하여 유지전류가 2500${\mu}A/{\mu}m$ 이상의 결과를 얻었다. 모의실험결과 두 모델 모두 도즈량이 많을수록 패치업 면역 특성이 좋아짐을 보았다. 모의실험 조건에서 두 모델 모두 n'-p' 간격은 2${\mu}m$로 고정하였다.

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수종의 역충전 재료의 치근단 밀폐력 비교 (COMPARISON OF THE SEALING ABILITY OF VARIOUS RETROGRADE FILLING MAIERIALS)

  • 황윤찬;강인철;황인남;오원만
    • Restorative Dentistry and Endodontics
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    • 제26권5호
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    • pp.379-386
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    • 2001
  • This study was performed to evaluate the sealing ability of various retrograde filling materials by using bacterial penetration and dye penetration test. One hundred and forty extracted human teeth with single, straight canals and mature apiece were collected and used for this study. All canals were instrumented using an engine driven Ni-Ti file (ProFile). After removing 3mm from the apex of tooth, a standardized 3mm root end cavity was prepared using an ultrasonic instrument. The 70 teeth were randomly divided into 7 groups : 6 groups for retrograde filling using Super-EBA, ZOE, Chelon-Silver, IRM, ZPC and amalgam. The 7th group was used as a negative control. Nail varnish was applied to all external root surfaces to the level of the reseated root ends to prevent lateral microleakages. The specimens were then sterilized in an ethylene oxide sterilizer for 24 hours. 2 mm of the reseated root was immersed in a culture chamber containing a Tripticase Soy Broth with a phenol red indicator. The coronal access of each specimen was inoculated every 72 hours with suspension of Proteus vulgaris. The culture media were observed every 24hours for color change indicating bacterial contamination. The specimens were observed for 4weeks. The remaining 70 teeth were submitted to a dye penetration test. The canals of all teeth were first sealed with AH26 and obturated using an Obtura II system. Root resection, root end preparation and retrograde filling was performed as above. All specimens were suspended in 2% methylene blue dye for 72 hours before being ion gitudinally split. The degree of dye penetration was then measured using a stereomicroscope at 10 magnification and evaluated. The results were as floows : 1. In the bacterial penetration, the degree of leakage was the lowest in the Super-EBA, followed by, in ascending order, ZOE, Chelon-Silver IRM and ZPC. The amalgam showed highest bacterial leakage of all(p<0.01). 2. In the dye penetration, the degree of microleakage was the lowest in the Chelon-Silver and Super-EBA, followed by, in ascending order, IRM, ZPC. The ZOE and amalgam showed the highest microleakage of all (p<0.05). These results suggested that the eugenol based cement, Super-EBA, have excellent sealing ability as a retrograde filling material.

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Intramedullary Screw Fixation for Clavicle Shaft Fractures: Comparison of the Anterograde versus the Retrograde Technique

  • Rhee, Yong Girl;Cho, Nam Su;Cho, Sung Whan;Song, Jong Hoon
    • Clinics in Shoulder and Elbow
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    • 제19권1호
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    • pp.8-14
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    • 2016
  • Background: The purpose of this study was to investigate the difference between two nailing approaches of intramedullary screw fixation, the retrograde nailing versus the anterograde nailing, on the radiological and clinical outcomes in patients with clavicle shaft fractures. Methods: From April 2002 to August 2014, we enrolled a total of 22 patients with clavicle shaft fractures to participate in this study. Twelve patients received retrograde intramedullary nailing and 10 received anterograde nailing. The average duration of follow-up was 12 months. In all the patients, we took follow-up radiographs of the anteroposterior and the axial views to assess the postoperative radiological outcomes. We measured the visual analogue scale (VAS) score, American Shoulder and Elbow Surgeons (ASES) score, and the range of motion (ROM). Results: Clinically, we did not find a statistically significant difference in the retrograde group and the anterograde group in terms of the duration to bone union, the VAS score the ASES score and the ROMs. Radiologically, we found that the difference in the clavicle shortening of the affected arm and the unaffected arm did not show a statistically significant difference at the immediate postoperative assessment. we found that the difference in the clavicle shortening of the affected arm between the immediate postoperative and the final follow-up value did not show a statistically significant difference. Conclusions: We found that both the retrograde nailing and the anterograde nailing gave a favorable outcome for clavicle shaft fractures. Although we saw evidence of clavicle shortening after intramedullary screw fixation, this was not a factor that influenced clinical outcome.