• 제목/요약/키워드: Resistive current

검색결과 450건 처리시간 0.027초

산화아연 피뢰기소자에 흐르는 저항분 누설전류의 검출기법 (A Detection Method of Resistive Leakage Current Flowing through ZnO Arrester Blocks)

  • 이복희;강성만
    • 조명전기설비학회논문지
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    • 제15권3호
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    • pp.67-73
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    • 2001
  • 본 논문에서는 ZnO 피뢰기 소자에 대한 내구성 평가와 열화실험을 위한 저항분 누설전류 검출장치의 개발과 열화진단기법에 대하여 기술하였다. 저항분 누설전류는 ZnO 피뢰기 소자가 정상상태인지 불안정상태인지에 대한 판단의 지표로서 사용할 수 있다. 본 논문에서는 보상회로로 구성된 저항분 누설전류 측정시스템을 설계하여 구성하고, 실증실험으로서 ZnO 소자에 대한 저항분 누설전류의 측정과 고속프리에 변환기법(Fast Fourier transform)을 통해 저항분 누설전류의 주파수특성을 조사·분석하였다. 분석결과 제안한 저항분 누설전류의 측정 시스템은 실험실에서 산화아연 바리스터의 전기적·물성적 특성을 연구하고, 전력계통에 있어서 ZnO 피뢰기의 열화의 진단과 예측기술을 개발하는데 유용하게 활용할 수 있다.

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Manufacture and Test of Small-scale Superconducting Fault Current Limiter by Using the Bifilar Winding of Coated Conductor

  • Yang, Seong-Eun;Ahn, Min-Cheol;Park, Dong-Keun;Jang, Dae-Hee;Ko, Tae-Kuk
    • 한국초전도ㆍ저온공학회논문지
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    • 제7권4호
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    • pp.20-23
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    • 2005
  • The Resistive Type High Temperature Superconducting Fault Current Limiter (SFCL) has been developed in many countries. Until now, materials of the resistive SFCL were Bi2212 bulk and YBCO thin film. Although YBCO coated conductor (CC) has many advantages such as high n-value and critical current for applying resistive SFCL, the resistive SFCL using CC doesn't have developed yet. The bifilar winding type SFCL was manufactured and tested rated on 30V/80A. In normal state, the SFCL using pancake type bifilar winding had very low impedance. When a fault occurred, the SFCL limited the fault current efficiently. Through these results of experiment, large-scale SFCL using CC should be developed in the future.

Low-Voltage Current-Sensing CMOS Interface Circuit for Piezo-Resistive Pressure Sensor

  • Thanachayanont, Apinunt;Sangtong, Suttisak
    • ETRI Journal
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    • 제29권1호
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    • pp.70-78
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    • 2007
  • A new low-voltage CMOS interface circuit with digital output for piezo-resistive transducer is proposed. An input current sensing configuration is used to detect change in piezo-resistance due to applied pressure and to allow low-voltage circuit operation. A simple 1-bit first-order delta-sigma modulator is used to produce an output digital bitstream. The proposed interface circuit is realized in a 0.35 ${\mu}m$ CMOS technology and draws less than 200 ${\mu}A$ from a single 1.5 V power supply voltage. Simulation results show that the circuit can achieve an equivalent output resolution of 9.67 bits with less than 0.23% non-linearity error.

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3상 단락사고에 대한 저항형과 유도형 한류기의 동작특성 (Operating properties of the resistive and inductive SFCL with the three-phase fault)

  • 최효상;현옥배;김상준
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1999년도 추계학술대회 논문집
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    • pp.209-212
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    • 1999
  • We studied the operating properties of resistive and inductive SFCLS with 100 $\Omega$ of quench impedance for a three-phase-fault in the 154 kV transmission system. The fault simulation at the phase angles 0$^{\circ}$ , 45$^{\circ}$ , and 90$^{\circ}$ showed that the resistive SFCL limited the fault current less than 16 kA without any DC component after one half cycle from the instant of the fault. On the other hand, the inductive SFCL suppressed the current below 11 kA, but with 3-4 kA of DC component which decreased to zero in 5 cycles. We concluded that the inductive SFCL had higher performance in current limiting but the resistive SFCL was better from the view point of DC components.

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Effect of Non-lattice Oxygen Concentration on Non-linear Interfacial Resistive Switching Characteristic in Ultra-thin HfO2 Films

  • 김영재;김종기;목인수;이규민;손현철
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.359-360
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    • 2013
  • The effect of electrode and deposition methods on non-linear interfacial resistive switching in HfO2 based $250{\times}250$ nm2 cross-point device was studied. HfO2 based device has the interfacial resistive switching properties of non-linearity and self-compliance current switching. The operating current in HfO2 based device was increased with negatively increasing the heat of formation energy in top electrode. Also, it was investigated that the operating current in HfO2 based device was changed with deposition methods of O3 reactant ALD, H2O reactant ALD and dc reactive sputtering, resulting the magnitude of the operating current and on/off ratio in order of HfO2 films deposited by dc reactive sputtering, H2O reactant ALD, and O3 reactant ALD. To investigate the effect of electrode and deposition methods on operating current of non-linear interfacial resistive switching in the cross-point device, X-ray photoelectron spectroscopy was measured. Through the analysis of O 1s spectra, non-lattice oxygen concentration, which is closely related to oxygen vacancies, was increased in order of Pt, TiN, and Ti top electrodes and in order of O3 reactant ALD, H2O reactant ALD, and O3 reactant ALD, and dc reactive sputtering deposition method. From all results, non-lattice oxygen concentration in ultra-thin HfO2 films play a crucial role in the operating current and memory states (LRS & HRS) in the non-linear interfacial resistive switching.

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금속-절연층-실리콘 구조에서의 비정질 GeSe 기반 Resistive Random Access Memory의 동작 특성 (Operating Characteristics of Amorphous GeSe-based Resistive Random Access Memory at Metal-Insulator-Silicon Structure)

  • 남기현;김장한;정홍배
    • 한국전기전자재료학회논문지
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    • 제29권7호
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    • pp.400-403
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    • 2016
  • The resistive memory switching characteristics of resistive random access memory (ReRAM) using the amorphous GeSe thin film have been demonstrated at Al/Ti/GeSe/$n^+$ poly Si structure. This ReRAM indicated bipolar resistive memory switching characteristics. The generation and the recombination of chalcogen cations and anions were suitable to explain the bipolar switching operation. Space charge limited current (SCLC) model and Poole-Frenkel emission is applied to explain the formation of conductive filament in the amorphous GeSe thin film. The results showed characteristics of stable switching and excellent reliability. Through the annealing condition of $400^{\circ}C$, the possibility of low temperature process was established. Very low operation current level (set current: ~ ${\mu}A$, reset current: ~ nA) was showed the possibility of low power consumption. Particularly, $n^+$ poly Si based GeSe ReRAM could be applied directly to thin film transistor (TFT).

1선 지락사고에 대한 배전급 저항형 초전도 한류기의 전류제한특성 (Current Limiting Characteristics of a Resistive SFCL for a Single-line-to-ground Fault in the 22.9 kV System)

  • 최효상;황시돌;현옥배
    • 한국전기전자재료학회논문지
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    • 제14권6호
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    • pp.505-510
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    • 2001
  • We simulated the current limiting characteristics of a resistive superconducting fault current limiter (SFCL) for a single line-to-ground fault in the 22.9 kV system. The transient current during the fault increased to 6.33 kA, 5.80 kA and 3.71 kA without SFCL at the fault angles 0$^{\circ}$, 45$^{\circ}$ and 90$^{\circ}$, respectively, a resistive SFCL limited effectively the fault current to 2.27 kA in a half cycle without any DC components. The maximum quench resistance of an SFCL, 16Ω was suggested to be appropriate to limit the fault current in the 22.9 kV distribution system, considering the operating cooperation of a protective relay and the current limiting performance of an SFCL.

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탄소피막고정저항기의 품질과 전류잡음과의 관계 (Relation between Quality and Current Noise in Carbon Film Resistors)

  • 노홍조
    • 대한전자공학회논문지
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    • 제9권5호
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    • pp.34-42
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    • 1972
  • 전류잡음은 탄소피막고정저항기의 품질을 나타내는 중요한 척도이다. 저항체피막상의 결함은 전류밀도의 불균형을 초래하고 결과적으로 전류잡음의 기대를 유발한다. 전류잡음의 크기는 저항재의 고유한 성질과 저항체의 처리, 조립 및 외장 등에 의한 여러 요인에 의존하고 있으나 각종 수명시험결과 저항기의 전기적특성과 전류잡음문에는 명백한 관계가 성립하고 있다. 대표군의 저항기에 대한 전류잡음지수의 정규분포를 표시하는 parameter를 해석하면 제품의 품질관리와 생산의 균일성을 판단하는 지표로서 매우 유용한 수단이다.

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우사(牛舍)에서 전기배선의 종류와 길이에 따른 저항성 및 용량성 누전전류 분석 (Analysis of Resistive and Capacitive Leakage Current according to Wiring Type and Length at Cattle Barn)

  • 유상옥;김두현;김성철
    • 한국안전학회지
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    • 제29권6호
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    • pp.34-39
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    • 2014
  • This paper is aimed to prevent danger of electrical fire at cattle barn to detect resistive and capacitive leakage current component for wiring type and length. In order to analysis for electric leakage component for cattle barn sizes and normal buildings, this paper was studied field state investigation which are at cattle barn companies(10 companies) in Cheong-won location and normal buildings at Nam-bu market in Jeon-ju location. Market to deduce the problems of electric leakage component is analyzed. The resistive and capacitive leakage current component for wiring type and length is analyzed at Beon-young cattle barn. Results show that electric leakage component suggested in this paper are valuable and usable to electrical fire in leakage current based on environment factor, which will prevent severe damage to human beings and properties and reduce the electrical fires in cattle barn. It is acceptable for electrical equipment use in an cattle barn.