• Proceedings of the KIEE Conference
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• 2015.07a
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• pp.563-564
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• 2015

Recently, distributed generation using renewable energy resources have increased due to the limitation of conventional energy. To utilize these energy source effectively, a method of applying the energy storage system(ESS) in distribution system has been considered. In this paper, we simulated the one line-to-ground fault in power system with ESS. Based on these simulations, we analyzed the effect on Over Current Relay(OCR) operation. As a result, ESS operation modes result fault current fluctuation. Thus, OCR need to reset the pick up current. This paper analyze effect of ESS in distribution system according to OCR setting by using ElectroMagnetic Transient Program(EMTP).

• Proceedings of the KIPE Conference
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• 2010.07a
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• pp.376-377
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• 2010

In this paper, novel unidirectional auxiliary resonant commutated pole is proposed to improve the performance of zero-voltage soft-switching inverter. The proposed circuit keeps the advantages of the original soft-switching inverter, while providing more effective resetting capability in magnetizing current. Based on the advanced reset mechanism, auxiliary switches operate under a complete zero-current condition. The operating principle and steady-state analysis are presented theoretically, according to its operating modes. Accordingly, it proves the fact that the proposed unidirectional auxiliary resonant commutated pole breaks an unwanted magnetizing current loop effectively. The performance of the proposed circuit is verified by several simulation results.

• Proceedings of the KIEE Conference
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• 2009.04b
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• pp.161-164
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• 2009

This paper presents the ZVZCS(Zero Voltage and Zero-Current-Switching) Three-Level converter using the secondary coupled inductor and auxiliary capacitor. The converter with phase-shift control is proposed to reduce the circulating loss in primary and the voltage stress in secondary side. Using a coupled winding of the output inductor, two auxiliary capacitors are generated to reset the primary current at circulating interval.

• Proceedings of the IEEK Conference
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• 2004.08c
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• pp.482-485
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• 2004

We fabricated a hybrid bulk/fully depleted silicon on insulator (FDSOI) complementary metal oxide semiconductor (CMOS) active pixel image sensor. The active pixel is comprised of reset and source follower transistors on the SOI seed wafer, while the pinned photodiode and readout gate and floating diffusion are fabricated on the SOI handle wafer after the removal of the buried oxide. The source of dark current is eliminated by hybrid bulk/FDSOI pixel structure between localized oxidation of silicon (LOCOS) and photodiode(PD). By using the low noise hybrid pixel structure, dark currents qm be suppressed significantly. The pinned photodiode can also be optimized for quantum efficiency and reduce the noise of dark current. The spectral response of the pinned photodiode on the SOI handle wafer is very flat between 400 nm and 700 nm and the dark current that is higher than desired is about 10 nA/cm2 at a $V_{DD}$ of 2 V.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.384-384
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• 2012

We report nonvolatile memory properties of poly (3, 4-ethylenedioxythiophene) (PEDOT) thin films grown by vapor phase polymerization using FeCl3 as an oxidant. Liquid-bridge-mediated transfer method was employed to remove FeCl3 for generation of pure PEDOT thin films. From the electrical measurement of memory device, we observed voltage induced bipolar resistive switching behavior with ON/OFF ratio of 103 and reproducibility of more than 103 dc sweeping cycles. ON and OFF states were stable up to 104 seconds without significant degradation. Cyclic voltammetry data illustrates resistive switching effect can be attributed to formation and rupture of conducting paths due to oxidation and reduction of PEDOT. The maximum current before reset process was found to be increase linearly with increase in compliance current applied during set process.

• Proceedings of the KIEE Conference
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• 1989.07a
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• pp.637-641
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• 1989

We have developed 3-stage of Magnetic Switch System based on the nonlinearities of ferromagnetic material used in the saturable inductor, and made experiment of parameter optimization and output stabilization of Magnetic Switch System. The cross-section and conductor burns of each satarable inductor were optimized 30 $cm^2$ 19.25 $cm^2$ 5, and 25 $cm^2$ 2, respectively. With this condition, 6.2 us [FWHM], 96 A pulse at first stage was compressed into 0.4 us[FWHM], 1.61 kA pulse at last stage. The current gain and compression ratio were 16.8, 17, respectively. ln addition, System output was stabilized with reset current of 6 A, 200 us.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.7
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• pp.400-403
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• 2016

The resistive memory switching characteristics of resistive random access memory (ReRAM) using the amorphous GeSe thin film have been demonstrated at Al/Ti/GeSe/$n^+$ poly Si structure. This ReRAM indicated bipolar resistive memory switching characteristics. The generation and the recombination of chalcogen cations and anions were suitable to explain the bipolar switching operation. Space charge limited current (SCLC) model and Poole-Frenkel emission is applied to explain the formation of conductive filament in the amorphous GeSe thin film. The results showed characteristics of stable switching and excellent reliability. Through the annealing condition of $400^{\circ}C$, the possibility of low temperature process was established. Very low operation current level (set current: ~ ${\mu}A$, reset current: ~ nA) was showed the possibility of low power consumption. Particularly, $n^+$ poly Si based GeSe ReRAM could be applied directly to thin film transistor (TFT).

• Journal of Sensor Science and Technology
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• v.15 no.5
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• pp.341-346
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• 2006

We have fabricated SOI CMOS active pixel image sensor with the pinned photodiode on handle wafer in order to reduce dark currents and improve spectral response. The structure of the active pixel image sensor is 4 transistors APS which consists of a reset and source follower transistor on seed wafer, and is comprised of the photodiode, transfer gate, and floating diffusion on handle wafer. The source of dark current caused by the interface traps located on the surface of a photodiode is able to be eliminated, as we apply the pinned photodiode. The source of dark currents between shallow trench isolation and the depletion region of a photodiode can be also eliminated by the planner process of the hybrid bulk/SOI structure. The photodiode could be optimized for better spectral response because the process of a photodiode on handle wafer is independent of that of transistors on seed wafer. The dark current was about 6 pA at 3.3 V of floating diffusion voltage in the case of transfer gate TX = 0 V and TX=3.3 V, respectively. The spectral response of the pinned photodiode was observed flat in the wavelength range from green to red.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.395-398
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• 2002

Many research group started study to develope x-ray detector using thin film transistor from 1970. But realization of TFT based x-ray detector development was caused by progress of thin film transistor liquid crystal display(TFTLCD) device technology in 1990. The main current of TFT technology is display device. Research results expend TFT technology field from display device to sensor manufacture technology. These days many research group in the world realize various digital x-ray detector. In this study, We compare discharge erasing method to visible light erasing method in a-Se based digital x-ray detector. Visible light erasing method is known reset process in direct conversion x-ray detector. Digital x-ray detector using visible light erasing method is not adaptive for conventional x-ray device, because of its thickness. And it is not avaliable for real-time imaging for digital fluoroscopy, because of its long reset time. In this study we overcome these limitations and show new idea for real-time imaging method.

• Journal of the Korean Ceramic Society
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• v.46 no.3
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• pp.336-343
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• 2009

Nickel oxide thin films exhibit the resistive switching as a function of applied voltages. The switching phenomena involve low and high resistance states after electroforming. The electrical features are believed to be associated with the formation and rupture of filaments. The set and reset behaviors are controlled by the oxidation and reduction of filaments. The indirect evidence of filaments is corroborated by the presence of nanocrystalline nickel oxides found in high-resolution transmission electron microscopy. The insertion of insulating layers seems to control the current-voltage characteristics by preventing the continuous formation of conductive filaments, potentially leading to artificial control of resistive behaviors in NiO-based systems.