• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.6
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• pp.539-545
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• 2013

In this paper, a behavioral current-voltage model with intermediate states is proposed for analog applications of unipolar resistive memories, where intermediate resistance values between SET and RESET state are used to store analog data. In this model, SET and RESET behaviors are unified into one equation by the blending function and the percentage volume fraction of each region is modeled by the Johnson-Mehl-Avrami (JMA) equation that can describe the time-dependent phase transformation of unipolar memory. The proposed model is verified by the measured results of $TiO_2$ unipolar memory and tested by the SPECTRE circuit simulation with CMOS read and write circuits for unipolar resistive memories. With the proposed model, we also show that the behavioral model that combines the blending equation and JMA kinetics can universally describe not only unipolar memories but also bipolar ones. This universal behavioral model can be useful in practical applications, where various kinds of both unipolar and bipolar memories are being intensively studied, regardless of polarity of resistive memories.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.218-219
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• 2008

In this paper, we have investigated the phase change memory device with cell structure using three-dimensional finite element analysis tool for reducing reset current. From the simulation, the reset current of PRAM with $SiO_2$ inserting layer is greatly reduced, compared with the conventional device.

• Journal of the Korea Institute of Military Science and Technology
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• v.9 no.4
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• pp.71-80
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• 2006

Strapdown Inertial navigation systems consist of an inertial sensor assembly(ISA), electronic modules to process sensor data, and a navigation computer to calculate attitude, velocity and position. In the ISA, most gryoscopes such as RLGs and FOGs, have digital output, but typical accelerometers use current as an analog output. For a high precision inertial navigation system, sufficient stability and resolution of the accelerometer board converting the analog accelerometer output into digital data needs to be guaranteed. To achieve this precision, the asymmetric error and A/D reset scale error of the accelerometer board must be properly compensated. If the relation between the acceleration error and the errors of boards are exactly known, the compensation and estimation techniques for the errors may be well developed. However, the A/D Reset scale error consists of a pulse-train type term with a period inversely proportional to an input acceleration additional to a proportional term, which makes it difficult to estimate. In this paper, the effects on the acceleration output for auto-pilot situations and the effects of A/D reset scale errors during horizontal alignment are qualitatively analyzed. The result can be applied to the development of the real-time compensation technique for A/D reset scale error and the derivation of the design parameters for accelerometer board.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• v.9 no.2
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• pp.685-688
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• 2005

An efficient sustain driver and a useful reset circuit composition technique are proposed for plasma display panel drive. The proposed sustain driver uses a series resonance between an external inductor and a panel to recover the energy dissipated by a capacitive displacement current of PDP. It consists of four switching devices, an inductor, and external capacitors, which supply sustain voltage sources. Although the amplitude of an input voltage source is twice as high as that of conventional sustain drivers, average voltage stress imposed on power switching devices is nearly same in their values. Moreover, the input voltage source can be directly applied for the use of a reset voltage source. Owing to this scheme, the proposed sustain driver and the embedded reset circuit have a simple configuration. The operational principle and design example are given with theoretical analyses. The validity of the proposed drive system is verified through experiments using a prototype equipped with a 7.5-inch-diagonal AC plasma display panel.

• Journal of Radiation Industry
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• v.9 no.1
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• pp.1-7
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• 2015

The trend of x-ray image sensor has been evolved from an amorphous silicon sensor to a crystal silicon sensor. A crystal silicon X-ray sensor, meaning a X-ray CIS (CMOS image sensor), is consisted of three transistors (Trs), i.e., a Reset Transistor, a Source Follower and a Select Transistor, and a photodiode. They are highly sensitive to radiation exposure. As the frequency of exposure to radiation increases, the quality of the imaging device dramatically decreases. The most well known effects of a X-ray CIS due to the radiation damage are increments in the reset voltage and dark currents. In this study, a pixel array of a X-ray CIS was made of $20{\times}20pixels$ and this pixel array was exposed to a high radiation dose. The radiation source was Co-60 and the total radiation dose was increased from 1 to 9 kGy with a step of 1 kGy. We irradiated the small pixel array to get the increments data of the reset voltage and the dark currents. Also, we simulated the radiation effects of the pixel by MCNP (Monte Carlo N-Particle) simulation. From the comparison of actual data and simulation data, the most affected location could be determined and the cause of the increments of the reset voltage and dark current could be found.

• Proceedings of the KIEE Conference
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• 1996.07a
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• pp.348-350
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• 1996

A new reset winding clamped forward converter with transformer voltage feedback technique for power factor correction with a single-switch/single-stage is proposed. The proposed converter gives the good power factor correction, low current harmonic distortions, and tight output voltage regulation. The prototype shows the IEC555-2 requirements are met satisfactorily with nearly unity power factor.

• Proceedings of the KIPE Conference
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• 2008.06a
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• pp.400-402
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• 2008

A new interleaved forward converter, adopting series-input parallel-output structure with a common transformer reset circuit, is proposed in this paper. Series-input structure distributes the voltage stress on switches, which makes it suitable for high input voltage application. Paralleling output stage with an interleaving technique enables the circuit handle large output current and reduces filter size. In addition, since two forward converters share one active-clamp circuit for the transformer reset, its primary structure is simplified. All these features make the proposed converter promising for high input voltage applications with high efficiency and simple structure.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.2
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• pp.94-97
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• 2007

The desin and implementation of a CMOS analog integrated circuit that provides dual-mode modulations, PWM for active clamp reset converter and PFM for LLC resonant converter, is described. The proposed controller is capable of implementing programmable soft start and current-mode control with compensating ramp for PWM and frequency shifting soft start for PFM. Also it provides delay time for both modes. PWM mode is implemented by active clamp reset converter and PFM mode is implemented by LLC resonant convereter, respectively. The chip is fabricated using the 0.6um high voltage CMOS process.

• Proceedings of the KIEE Conference
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• 1999.11b
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• pp.6-8
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• 1999

This paper presents a method to analyze a forward converter. A transformer is coupled with the forward converter electric circuit and then the finite element analysis considering a hysteresis phenomenon of magnetic core is carried out when the primary or the reset winding conducts current. The analytical method is used to reduce the computation time when the reset winding circuit of the transformer turns off. As a result, the simulation results show a good agreement with experimental ones.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.288-288
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• 2012

In this study, we investigated that the resistance switching characteristics of W-doped NbOx films with increasing W doping concentration. The W-doped NbOx based ReRAM devices with a TiN/W-doped NbOx/Pt/Ti/SiO2 were fabricated on Si substrates. The 50 nm thick W-doped NbOx films were deposited by reactive dc magnetron co-sputtering at $400^{\circ}C$ and oxygen partial pressure of 35%. Micro-structure of W-doped NbOx films and atomic concentration were investigated by XRD, TEM and XPS, respectively. The W-doped NbOx films showed set/reset resistance switching behavior at various W doping concentrations. The process voltage of set/reset is decreased and whereas the initial current level is increased with increasing W doping concentration in NbOx films. The change of resistance switching behavior depending on doping concentration was discussed in terms of concentration of metallic tungsten of oxygen of W-doped NbOx.