Electro and thermal Analysis of phase change memory with cell structure

셀 구조에 따른 상변화 메모리의 전기 및 발열 해석

  • Published : 2008.06.19

Abstract

In this paper, we have investigated the phase change memory device with cell structure using three-dimensional finite element analysis tool for reducing reset current. From the simulation, the reset current of PRAM with $SiO_2$ inserting layer is greatly reduced, compared with the conventional device.

Keywords