• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.4
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• pp.65-71
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• 2006

The number of elevator installation increases every year about 15,000. The number of confine-disease of elevator increases every year and then sudden in, sudden stop, error of level indication, stand; those can bring to uneasiness of elevator passenger and malfunction related life accident is increasing. Therefore we researched elevator repair diary of elevator repairing company, APT management office and 119 life rescue for elevator confine-disease during 2004. 1. 1.${\sim}$12. 31. we analyzed the content and the time type and cause of the malfunction and fault for APT elevator. Form the result of 119 life rescue, only power reset is 24[%] and only power failure is 8.2[%] by cause of confine-disease. This paper will be used data of the analysis for mutual relation between Power Quality and malfunction and fault of elevator.

• Transactions on Electrical and Electronic Materials
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• v.7 no.1
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• pp.7-11
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• 2006

The changes of the electrical conductivity in chalcogenide amorphous semiconductors, $Ge_{1}Se_{1}Te_{2}$, have been studied. A phase change random access memory (PRAM) device without an access transistor is successfully fabricated with the $Ge_{1}Se_{1}Te_{2}$-phase-change resistor, which has much higher electrical resistivity than $Ge_{2}Sb_{2}Te_{5}$ and its electric resistivity can be varied by the factor of $10^5$ times, relating with the degree of crystallization. 100 nm thick $Ge_{1}Se_{1}Te_{2}$ thin film was formed by vacuum deposition at $1.5{\times}10^{-5}$ Torr. The static mode switching (DC test) is tested for the $100\;{\mu}m-sized$ $Ge_{1}Se_{1}Te_{2}$ PRAM device. In the first sweep, the amorphous $Ge_{1}Se_{1}Te_{2}$ thin film showed a high resistance state at low voltage region. However, when it reached to the threshold voltage, $V_{th}$, the electrical resistance of device was drastically reduced through the formation of an electrically conducting path. The pulsed mode switching of the $20{\mu}m-sized$ $Ge_{1}Se_{1}Te_{2}$ PRAM device showed that the reset of device was done with a 80 ns-8.6 V pulse and the set of device was done with a 200 ns-4.3 V pulse.

• Proceedings of the KSR Conference
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• 2011.05a
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• pp.356-362
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• 2011

Usually urban railways are built under ground thus the necessary condition of urban railroad, a linear-shaped track, causes a difficulty in enhancement of speed limits of urban rail. Also the underground construction of city railroad produces speed limit values reduced according to a speed code array, in case of speed decision according to the conventional block section division, thus onventionally it could not but apply speed limit values lower than actual safety speeds. In this study, The above two facts induced the author to study on a method to enhance speed limit values for CBTC within existing urban railroad sectors. Since it is possible to exchange data continuously and to control speeds in case of railroads based on CBTC, the author applied result values of speed limits, which were gained based on a railroad condition, a linear track, to the CBTC system without correction of the result values and then the author compared and analyzed, through simulation, the running times and the efficiencies of running energies between railway stations, between the existing fixed-block system and the CBTC system. As a result simulation, the improvement of speed and the deceleration distance of reduction confirmed that it was effective to reduce the time to travel between stations. A fixed block the set of constraints on the speed limit, he way the operation is optimized based CBTC speed limit by suggesting ways to reset the scheduled speed measures to improve were extracted.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.10 no.6
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• pp.307-315
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• 2010

Although a substantial amount of studies have been carried out in order to improve the performance of IEEE 802.11, most of them focused on how to slowly decrease the Contention Window size, instead of resetting it to its initial value. Slow decreasing of the window size reduces the collision probability and increases the channel throughput. Therefore, it is difficult to achieve good results in a heterogeneous network which coexists with the original DCF. For instance, a Gentle DCF(GDCF) has good performance in a homogeneous environment, while it can hardly transmit frames in a heterogeneous environment including the original DCF. It is because the slow decreasing of the window size reduces the transmission probability. In this paper, we propose a Fast Recovery DCF(FRDCF) to solve this problem. In the FRDCF, the reset mechanism of the original DCF is maintained to keep the transmission probability high, while a new counter is used to enhance the performance of the wireless LAN. We prove that, compared with the GDCF, the FRDCF has better performance in a heterogeneous wireless LAN.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.343-344
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• 2012

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states. [1-3] We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

• Journal of Distribution Science
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• v.15 no.8
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• pp.55-64
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• 2017

Purpose - PB products at convenience stores take up about 20% of all products, and strategies for differentiation from other companies and brand image building are very important. This study would investigate the strategy for differentiating PB products and successful brand building strategy, focusing on BGF Retail that is operating 'CU', the leader in the convenience store industry in Korea. Research design, data, and methodology - This study would attempt to make an exploratory approach to PB products limited to those in convenience stores. As a research subject, this study chose BGF Retail, the operator of CU, which is the leader in the convenience store industry in Korea and chose the case study method in order to examine the strategy for differentiating PB products in convenience stores more in depth. For this purpose, this study collected materials such as papers, newspaper articles and various reports on convenience store-related PB products and conducted an in-depth study including more practical contents through an interview with CU workers. Results - CU pursued the diversity of PB products and has had the diversity of products, more than 120 kinds. It founded a product research institute and has been in charge of the differentiation strategy from planning products to launching them. Changing the target layer of consumers to those in middle age of the 40s-50s, it succeeded in the strategy expanding the consumer class. In the long run, despite it changed the name of the company, it has built a successful image, and both revenue and operating profit have continuously grown up. Conclusions - In results, CU has reset the changing main target population, and the product research institute succeeded in the innovation of products, reflecting new trends the customers want. Through this study, the practical implications could be provided for competitors.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.11 s.353
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• pp.78-84
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• 2006

This paper proposes a method to endow the mobility to the Zigbee protocol which is a short distance wireless communication technology among the standards of wireless sensor networks. The Zigbee has a low price, long life battery, simple structure and connectivity. So it is a suitable standard for the short distance wireless communication of $10m{\sim}70m$. As the Zigbee does not support the mobility, additional factors should be studied to deal adeptly with the diverse change in the real field. By solving the problem that the previous connection and binding table of the Zigbee end device should be reset due to the Zigbee end device address variation when the Zigbee end device moves from the present router to another router, this paper presents the method to communicate without data loss or disconnection.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.8
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• pp.61-70
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• 2009

A 10b 30MS/s pipelined ADC operating under 1V power supply is presented. It utilizes a switched-RC based input sampling circuit and a resistive loop to reset the feedback capacitor in the multiplying digital-to-analog converter (MDAC) for the low-voltage operation. Cascaded switched-RC branches are used to achieve accurate grain of the MDAC for the first stage and separate switched-RC circuits are used in the sub-ADC to suppress the switching noise coupling to the MDAC input The measured differential and integral non-linearities of the prototype ADC fabricated in a 0.13${\mu}m$, CMOS process are less than 0.54LSB and 1.75LSB, respectively. The prototype ADC achieves 54.1dB SNDR and 70.4dB SFDR with 1V supply and 30MHz sampling frequency while consuming 17mW power.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.1
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• pp.179-184
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• 2014

The discharge characteristics of an open dielectric structure were investigated, especially such as a firing voltage and related wall voltage, compared with conventional panel structure based on the Vt close curve measurement in AC plasma display panel. While the front panel of the conventional structure in AC plasma display panel was composed of the glass, electrodes, and dielectric, the open dielectric structure could easily produce the discharge between the scan and the sustain electrodes by erasing the dielectric layer between two electrodes. As the open dielectric structure differ from the conventional structure, various problems were produced when driving with the conventional driving waveform. Especially, due to the changes in the discharge firing characteristics of the open dielectric structure between the scan and the sustain electrodes on the front panel, the conventional reset waveform including the address waveform needed to be modified. In this study, the Vt close curves were measured to compare the discharge firing voltages on three electrodes in the conventional and open dielectric structure and based on the Vt close curve analysis, the modified driving waveform suitable for the open dielectric structure was proposed.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.174-179
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• 2017

We designed the CMOS analog integrate and fire (I&F) neuron circuit for driving memristor based on resistive-switching random access memory (RRAM). And we fabricated the RRAM device that have $HfO_2$ switching layer using atomic layer deposition (ALD). The RRAM device has gradual set and reset characteristics. By spice modeling of the synaptic device, we performed circuit simulation of synaptic device and CMOS neuron circuit. The neuron circuit consists of a current mirror for spatial integration, a capacitor for temporal integration, two inverters for pulse generation, a refractory part, and finally a feedback part for learning of the RRAM. We emulated the spike-timing-dependent-plasticity (STDP) characteristic that is performed automatically by pre-synaptic pulse and feedback signal of the neuron circuit. By STDP characteristics, the synaptic weight, conductance of the RRAM, is changed without additional control circuit.