• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.3
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• pp.540-548
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• 2007

The parer proposes a power factor correction high efficiency PWM single-phase rectifier. Its good characteristics such as simple PWM control, low switch stress, and low VAR rating of commutation circuits make the proposed rectifier very suitable for various unidirectional power applications. In addition, the proposed rectifier consists of three boost-converter-type IGBT modules with the switching devices located at the bottom leg of the rectifier scheme, which also enables the use of the same power supply in both control and gate driver, thus resulting in simple control and power circuit structure. The detailed principle of operation and experimental results are also included. In particular, the design guide line is also suggested to make the circuit design of the proposed rectifier easy and fast.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.10a
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• pp.278-281
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• 2014

This paper presents the performance comparison of three types of full-wave rectifiers for vibration energy harvesting. The first rectifier is consisted of two active diodes and two MOSFETs, and the comparators of the active diodes are powered from the output of the rectifier. The second one is a 2-stage full-wave rectifier. It comprises the basic rectifier consisted of four MOSFETs and an active diode. The comparator is also powered from the output of the rectifier. The third one is an input powered rectifier. It has the same structure as the second rectifier, but the comparator is powered from the input of the rectifier. These rectifiers have been designed using a 0.35um CMOS process and their performances have been compared through simulations. In terms of efficiency, the first rectifier shows the best performance at heavy loads, but the second one is suitable at light loads. When the power consumption during absence of vibration is more important than efficiency, the input-powered rectifier is proper.

• Journal of Power Electronics
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• v.6 no.1
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• pp.45-51
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• 2006

A new high efficiency phase shifted full bridge (PSFB) converter for the power sustaining module of a plasma display panel (PDP) is proposed in this paper. The proposed converter employs a voltage doubler rectifier without an output inductor. Since it has no output inductor, the voltage stresses of the secondary rectifier diodes can be clamped at the output voltage level. No dissipative resistor-capacitor (RC) snubber for rectifier diodes is needed. Therefore, high efficiency, as well as, a low noise output voltage can be realized. Due to the elimination of the large output inductor, it features a simple structure, lower cost, smaller mass and lighter weight. Furthermore, the proposed converter has wide zero voltage switching (ZVS) ranges with low current stresses of the primary switches. Also the resonance between the leakage inductor of the transformer and the capacitor of the voltage doubler cell reduces the current stresses of the rectifier diodes. In this paper, operational principles, an analysis of the proposed converter and experimental results are presented.

• Proceedings of the KIEE Conference
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• 2003.10b
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• pp.166-170
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• 2003

This paper presents the TTFC(Two Transistor Forward Converter) using Synchronous Rectifier of Compulsory Control-driver. The two transistor forward circuit is used to decrease voltage stress of primary side and the synchronous rectifier is used to reduce current stress of secondary side. Previous synchronous rectifier's MOSFET of TTFC have long dead time This paper presents synchronous rectifier of compulsory control-driver for minimized dead time. This paper compared with diode rectifier, self-driven synchronous rectifier and compulsory control-driver synchronous rectifier of TTFC. The principle of operation, feature and design considerations are illustrated and verified through the experiment with a 200W 100kHz MOSFET based experimental circuit.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.4
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• pp.1789-1796
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• 2012

In this paper, a new high-efficiency CMOS bridge rectifier for driving RFID tag chips is designed and analyzed. The input stage of the proposed rectifier is designed as a cascade structure connected with two NMOSs for reducing the gate capacitance by circuitry method, which is the main path of the leakage current that is increased when the operating frequency is increased. This gate capacitance reduction technique using the cascade input stage for reducing the gate leakage current is presented theoretically. The output characteristics of the proposed rectifier are derived analytically using its high frequency small-signal equivalent circuit. For the general load resistance of $50K{\Omega}$, the proposed rectifier shows better power conversion efficiencies of 28.9% for 915MHz UHF (for ISO 18000 -6) and 15.3% for 2.45GHz microwave (for ISO 18000-4) than those of 26.3% and 26.8% for 915MHz, and 13.2% and 12.6% for 2.45GHz of compared other two existing rectifiers. Therefore, the proposed rectifier may be used as a general purpose rectifier to drive tag chips for various RFID systems.

• Proceedings of the KIPE Conference
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• 2005.07a
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• pp.445-448
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• 2005

A new high efficiency phase shifted full bridge (PSFB) converter for sustaining power module of plasma display panel (PDP) is proposed in this paper .The proposed converter employs the rectifier of voltage doubler type without output inductor. Since it has no output inductor, the voltage stresses of the secondary rectifier diodes can be clamped at the level of the output voltage. Therefore, no dissipative resistor-capacitor (RC) snubber for rectifier diodes is needed and a high efficiency as well as low noise cutout voltage can be realized. In addition, due to elimination of the large output inductor, it features a simple structure, lower cost, less mass, and lighter weight. Furthermore, the proposed converter has wide zero voltage switching (ZVS ) ranges with low current stresses of the primary switches. Also the resonance between the leakage inductor of the transformer and the capacitor of the voltage doubler cell makes the current stresses of the primary switches and rectifier diodes reduced. In this paper, the operational principles, analysis of the proposed converter, and the experimental results are presented.

• The Transactions of the Korean Institute of Power Electronics
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• v.22 no.4
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• pp.297-304
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• 2017

The purpose of this paper is to analyze losses because of switching devices and the secondary side circuit diodes of 500 W full bridge dc-dc converter by applying gallium nitride (GaN) field-effect transistor (FET), which is one of the wide band gap devices. For the detailed device analysis, we translate the specific resistance relation caused by the GaN FET material property into algebraic expression, and investigate the influence of the GaN FET structure and characteristic on efficiency and system specifications. In addition, we mathematically compare the diode rectifier circuit loss, which is a full bridge dc-dc converter secondary side circuit, with the synchronous rectifier circuit loss using silicon metal-oxide semiconductor (Si MOSFET) or GaN FET, which produce the full bridge dc-dc converter analytical value validity to derive the final efficiency and loss. We also design the heat sink based on the mathematically derived loss value, and suggest the heat sink size by purpose and the heat divergence degree through simulation.

• 제어로봇시스템학회:학술대회논문집
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• 1996.10a
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• pp.255-258
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• 1996

This paper describes a DC voltage controller for the DC power supply which is constructed using the full-bridged MOS-FET DC-to-RF power inverter and rectifier. The full-bridged MOS-FET DC-to-RF inverter consisting of four MOSFET arrays and an output power transformer has a control function which is able to control the RF output power when the widths of the pulse voltages which are fed to four MOS-FET arrays of the fall-bridged inverter are changed using the pulse width control circuit. The power conversion efficiency of the full-bridged MOS-FET DC-to-RF power inverter was approximately 85 % when the duty cycles of the pulse voltages were changed from 30 % to 50 %. The RF output voltage from the full-bridged MOS-FET DC-to-RF inverter is fed to the rectifier circuit through the output transformer. The rectifier circuit consists of GaAs schottky diodes and filters, each of which is made of a coil and capacitors. The power conversion efficiency of the rectifier circuit was over 80 % when the duty cycles of the pulse voltages were changed from 30 % to 50 %. The output voltage of the rectifier circuit was changed from 34.7V to 37.6 V when the duty cycles of the pulse voltages were changed from 30 % to 50 %.

• Journal of IKEEE
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• v.22 no.2
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• pp.393-401
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• 2018

In this paper, a rectifier for WPC / A4WP wireless power transmission is designed. The proposed rectifier supports both WPC (Wireless Power Consortium) and A4WP (Alliance For Wireless Power) and is designed with full-bridge rectifier. WPC transmits power at the frequency of 100kHz to 205kHz and A4WP at the frequency of 6.75MHz. Since the bridge rectifier uses a MOSFET instead of a diode, the reverse current flows and the efficiency is affected if the output voltage is higher than the input voltage. Therefore, we added the reverse current detector that detects the current flowing through the MOSFET and shut off the reverse current. The frequency discriminator is used because the rectifier has different frequency band. The proposed rectifier was designed using $0.35{\mu}m$ CMOS high voltage process. The input voltage is up to 18V and the rectifier operates at 100kH to 205kHz, 6.78MHz frequency. The maximum efficiency is 94.8% and the maximum power transfer is 5.78W.

• Proceedings of the KIPE Conference
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• 2000.07a
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• pp.266-269
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• 2000

This paper presents a novel single-stage unity power factor converter which features the reduced switching losses by zero-voltage switching and zero-current switching (ZVZCS). Hence the turn-on and turn-off losses of switches are sufficiently reduced. And the reduced conduction losses are achieved by the elimination of one leg of front-end rectifier. And low on-resistance MOSFETs (Synchronous Rectifier) are used in the rectifier at the secondary side of high frequency transformer instead of diodes. Theoretical analysis simulated results of a AC to DC 150W(5V, 30A) converter are presented.