• Applied Biological Chemistry
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• 제38권4호
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• pp.353-358
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• 1995

옥수수 전분(초기 수분함량 11.4%)을 $130{\sim}220^{\circ}C$에서 건열처리하여 DSC로 열분석한 결과 $190^{\circ}C$이상에서 호화엔탈피는 감소하였고 알칼리호화시 열처리온도가 상승할수록 점도가 증가하였다. $170^{\circ}C$이상에서 열처리 온도가 높아질수록 원료전분에 비하여 최고점도를 포함한 아밀로그램상의 모든 값들, 전분호화액의 전단응력과 겉보기점도, 점조도지수 및 항복응력은 감소하였다. $90^{\circ}C$에서 호화진행에 따라 모든 시료들의 겉보기 점도와 항복응력은 상당히 증가하였으며 $190^{\circ}C$시료는 특히 초기에 급증하였으나, 점조도지수는 약간 증가한 반면에, 유동거동지수값들은 큰 차이를 보이지않았다. 그러나 $220^{\circ}C$의 경우 모든 값들이 다른 시료들에 비하여 크게 낮았다.

• 한국결정성장학회지
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• 제19권6호
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• pp.298-304
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• 2009

고온 열수송시스템용 구조재료인 Inconel 617의 표면 처리에 따른 고온물성 개선에 대한 연구를 수행하였다. 표면처리 방법으로는 Inconel 617 기판 상에 급속가열(RTP) 및 수열처리를 통한 균질산화물 형성과 물리적 기상증착법(Arc discharge)법에 의한 TiAlN(두께 약 $2{\mu}m$ 박막 코팅을 적용하였다. 불균질 산화물($Cr_2O_3$) 형성 억제에 미치는 표면처리의 효과 및 표면 미세구조가 물성에 미치는 영향에 대해 알아보기 위해 표면처리된 Inconel 617 시편들을 $1000^{\circ}C$, 대기중에서 열처리 하였으며, 열처리된 시편들에 대해 고온 상형성 및 미세구조를 비교 분석하였다. RTP와 수열처리를 통한 표면산화물 형성보다는 TiAlN 박막 증착을 통한 보호피막의 형성이 Inconel 617 표면에서 생성되는 불균일 $Cr_2O_3$ 막의 성장을 효과적으로 억제할 수 있어서 더 균질한 미세구조와 가장 우수한 내마모 특성을 나타내었다.

• KIEAE Journal
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• 제16권3호
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• pp.25-34
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• 2016

Purpose: The temperature in Seoul has risen 3 times more than the average global temperature increase for the past 100 years. Today, summer starts 15 days earlier than the early 20th century and is 32 days longer. This tendency causes rapid increase of cooling energy demand. Following this effect, seawater heat resources are to be used as an countermeasure for global warming. Incheon Port near the Western Sea has the lowest water temperature in the winter in South Korea in which it is suitable to use seawater cold heat resources. Method: The cold heat resource is gained from seawater when the water temperature is the lowest in the winter time and saved in a seasonal thermal storage. This can be used as cold heat resource in the summer time. A heat exchanger is essential to gain seawater cold energy. Due to this necessity, sea water heat resource heat exchangers are modeled by heat transfer equations and the fluid characteristics are analyzed. Also, a CFD (computational fluid dynamics) program is used to conduct simulation on the fluid characteristics of heat exchangers. The analyzed data of deducted from this process are comprehensively analyzed and discussed. Result: Regarding the performance of the heat exchanger, the heat exchanger was operated following the prediction within the range of heat transfer rate of minimum 3.3KW to maximum 33.6KW per device. In the temperature change analysis of the heat exchanger, fluid analysis by heat transfer equations almost corresponded to the temperature change by CFD simulation. Therefore, it is considered that the results of this study can be used as design data of heat exchangers.

• 전자공학회논문지A
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• 제31A권12호
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• pp.80-90
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• 1994

To develop VLSI of higher packing density with 0.5.mu.m gate length of less, semiconductor devices require shallow junction with higher doping concentration. the most common method to form the shallow junction is ion implantation, but in order to remove the implantation induced defect and activate the implanted impurities electrically, ion-implanted Si should be annealed at high temperature. In this annealing, impurities are diffused out and redistributed, creating deep PN junction. These make it more difficult to form the shallow junction. Accordingly, to miimize impurity redistribution, the thermal-budget should be kept minimum, that is. RTA needs to be used. This paper reports results of the diffusion characteristics of PSG film by varying Phosphorus weitht %/ Times and temperatures of RTA. From the SIMS.ASR.4-point probe analysis, it was found that low sheet resistance below 100 .OMEGA./ㅁand shallow junction depths below 0.2.mu.m can be obtained and the surface concentrations are measured by SIMS analysis was shown to range from 2.5*10$^{17}$ aroms/cm$^{3}$~3*10$^{20}$ aroms/cm$^{3}$. By depending on the RTA process of PSG film on Si, LDD-structured nMOSFET was fabricated. The junction depths andthe concentration of n-region were about 0.06.mu.m. 2.5*10$^{17}$ atom/cm$^{-3}$ , 4*10$^{17}$ atoms/cm$^{-3}$ and 8*10$^{17}$ atoms/cm$^{3}$, respectively. As for the electrical characteristics of nMOS with phosphorus junction for n- region formed by RTA, it was found that the characteristics of device were improved. It was shown that the results were mainly due to the reduction of electric field which decreases hot carriers.

• 한국철도학회:학술대회논문집
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• 한국철도학회 2005년도 춘계학술대회 논문집
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• pp.491-497
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• 2005

Brake system is indispensible functional part to the transportation machines such as railroad cars, and all of industrial machines. It is mechanical element to stop the movement or slow the speed, transforming kinetic energy of motion object into thermal energy through solid friction. According that recently the railroad cars have become high-speed, the technique in braking domain to secure the overall braking effort is making rapid progress. In particular, material development and manufacturing process are so important to secure friction performance, which is the core in braking performance of mechanical brake units. Wear of brake disk could mainly result in the diminishment of its life span due to thermal cracking, so the endurance against high temperature is required. On the other hand, in this case, the problem is that the side wear of pad, relative material is slightly increased because of enlargement of plastic deformation. It is necessary, therefore, to develop a disk material that will be used in the Tilting System mechanical brake units. The purpose of this paper is to make a study prior to developing brake disk of Tilting Train travelling at 200km/h and to propose the component of brake disk. Accordingly, I will conduct sufficient researches on technical documents of brake disk, that are basic documentations, analyze an impact on components, and further, considering braking degree of train, study for the basic proposal on brake disk's component of the train travelling at 200km/h, which has relatively minor influence of heat stress and maintains the friction. In this respect, I would like to investigate friction characteristics between disk and relative friction material via Test on some possible test segments, analyze and propose friction performance, temperature impact and so forth coming from the contact with pad, relative material to demonstrate the friction characteristics.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.198-201
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• 2002

In this paper, the dependence of Ni-silicide properties such as sheet resistance and cross-sectional profile on the dopants have been characterized. There was little dependence of sheet resistance on the used dopants such as As, P, $BF_{2}$ and $B_{11}$ just after RTP (Rapid Thermal Process). However, the silicide properties showed strong dependence on the dopants when thermal treatment was applied after formation of Ni-silicide. $BF_{2}$ implanted sample shows the best stable property, while $B_{11}$ implanted one was thermally unstable. The main reason of the excellent property of $BF_{2}$ sample is believed to be the retardation of Ni diffusion by the flourine.

• Carbon letters
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• 제12권1호
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• pp.21-25
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• 2011

A novel electrode for an NO gas sensor was fabricated from electrospun polyacrylonitrile fibers by thermal treatment to obtain carbon fibers followed by chemical activation to enhance the activity of gas adsorption sites. The activation process improved the porous structure, increasing the specific surface area and allowing for efficient gas adsorption. The gas sensing ability and response time were improved by the increased surface area and micropore fraction. High performance gas sensing was then demonstrated by following a proposed mechanism based on the activation effects. Initially, the pore structure developed by activation significantly increased the amount of adsorbed gas, as shown by the high sensitivity of the gas sensor. Additionally, the increased micropore fraction enabled a rapid sensor response time due to improve the adsorption speed. Overall, the sensitivity for NO gas was improved approximately six-fold, and the response time was reduced by approximately 83% due to the effects of chemical activation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.133-134
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• 2006

A simple doping method to fabricate a very thin channel body of the n-type fin field-effect-transistor (FinFET) with a 20 nm gate length by solid-phase-diffusion (SPD) process is presented. Using As-doped spin-on-glass as a diffusion source of arsenic and the rapid thermal annealing, the n-type source-drain extensions with a three-dimensional structure of the FinFET devices were doped. The junction properties of arsenic doped regions were investigated by using the $n^+$-p junction diodes which showed excellent electrical characteristics. Single channel and multi-channel n-type FinFET devices with a gate length of 20-100 nm was fabricated by As-SPD and revealed superior device scalability.

• 한국재료학회지
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• 제14권11호
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• pp.769-774
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• 2004

15 nm-Co/15 nm-Ni/P-Si(100)[Type I] and 15 nm-Ni/15 nm-Co/P-Si(100)(Type II) bilayer structures were annealed using a rapid thermal annealer for 40sec at $700/sim1100^{\circ}C$. The annealed bilayer structures developed into composite NiCo silicides and resulting changes in sheet resistance, composition and microstructure were investigated using Auger electron spectroscopy and transmission electron microscopy. Prepared NiCoSix films were further treated in a sequential annealing set up from $900\sim1100^{\circ}C$ with 30 minutes. The sheet resistances of NiCoSix from Type I maintained less than $7\;{\Omega}/sq$. even at the temperature of $1100{\circ}C$, while those of Type II showed about $5\;{\Omega}/sq$. with the thinner and more uniform thickness. With the additive post annealing, the sheet resistance for all the composite silicides remained small up to $900^{\circ}C$. The proposed NiCoSix films were superior over the conventional single-phased silicides and may be easily incorporated into the sub-0.1 ${\mu}m$ process.

• 대한전자공학회논문지
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• 제26권7호
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• pp.58-72
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• 1989

본 연구에서는 텅스텐 할로겐 램프를 사용한 RTA(or RTP) 장치를 제작하여 웨이퍼 가장자리와 내부사이의 서로 다른 반사계수를 갖는 반사판을 사용하여 $1300^{\circ}C$에서 최소 2개까지 슬립 (${\2"}$ wafer) 발생억제 효과를 얻을 수 있었다. 뿐만 아니라 웨이퍼 주위에 흑연환을 씌워 경계에서 잃는 온도 보상효과를 주어 슬립 생성을 억제시킬 수 있었다. 또한 소모전력감소 및 슬립현장을 동시에 줄이기 위한 또 다른 방법으로 Two-channel heating을 제시하였다.