• Journal of Korea Trade
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• 제26권8호
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• pp.58-76
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• 2022

Purpose - This study examined the Rules of Origin (RoO) as a factor affecting free trade agreements' (FTA) utilization and analyzed the causal relationship and the effects of these factors on the export performance of automobile parts companies. Design/methodology - We analyzed and verified the impact of FTA utilization and the export performance of automobile parts companies by dividing the characteristics of the RoO into complexity and uncertainty. Following which, various statistical analyses were conducted on the interrelationships among these variables. Findings - This research analyzed the effect of the RoO factors of complexity and uncertainty on the use of FTA and the export performance of automobile parts companies. We found that these characteristics of RoO were generally related to and affected the FTA use and export performance of these companies. Based on this, this study's investigation into the characteristics of the RoO would then help companies in better utilizing the FTA, as well as providing suggestions on how to effectively respond to the application of the FTA in the future. Originality/value - Companies that want to utilize FTAs in international trade must follow the RoO. In the Regional Trade Agreement (RTA), the country-of-origin is a key factor, with the RoO being an important requirement for the application of preferential tariffs. These regulations are a requirement for receiving FTA preferential treatment; however, they also cause difficulties to companies in using the FTA.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.851-856
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• 2003

We have investigated the material and electrical properties of $Bi_{4-x}La_xTi_3O_{12}$ (BLT) ferroelectric thin film for ferroelectric nonvolatile memory applications of capacitor type and single transistor type. The 120nm thick BLT films were deposited on $Pt/Ti/SiO_2/Si$ and $SiO_2/Nitride/SiO_2$ (ONO) substrates by the sol-gel spin coating method and were annealed at $700^{\circ}C$. It was observed that the crystallographic orientation of BLT thin films were strongly affected by the excess Bi content and the intermediate rapid thermal annealing (RTA) treatment conditions regardeless of two type substrates. However, the surface microstructure and roughness of BLT films showed dependence of two different type substrates with orientation of (111) plane and amorphous phase. As increase excess Bi content, the crystallographic orientation of the BLT films varied drastically in BLT films and exhibited well-crystallized phase. Also, the conversion of crystallographic orientation at intermediate RTA temperature of above $450^{\circ}C$ started to be observed in BLT thin films with above excess 6.5% Bi content and the rms roughness of films is decreased. We found that the electrical properties of BLT films such as the P-V hysteresis loop and leakage current were effectively modulated by the crystallographic orientations change of thin films.

• 한국결정성장학회지
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• 제31권2호
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• pp.73-77
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• 2021

RF 마그네트론 스퍼터링 공정에 의해 Ga-doped ZnO 박막이 O2 및 Ar 분위기 하에서 증착 조건에 따라 합성되었으며, N2 분위기에서, 600℃에서 급속열처리(RTA)를 실시하였다. 증착된 ZnO : Ga 박막에 대해 두께를 측정하였고, XRD 패턴 분석에 의해 결정상을 조사하였으며, FE-SEM, AFM 이미지에 의해 박막의 미세구조를 관찰하였다. O2 및 Ar 분위기 기체 종류별로 형성된 박막들의 증착 조건에 따라 X-선 회절 패턴의 (002)면의 세기는 상당한 차이를 나타냈다. O2 조건에서는 Ga doping이 이루어진 단일 박막의 경우에서는 강한 세기의 회절피크가 관찰되었다. O2 및 Ar 조건에서는 Ga doping이 이루어진 다층박막의 경우에서는 다소 약한 세기의 (002) 면의 피크만을 나타내었다. FE-SEM image에서는 박막의 표면입자의 크기는 두께가 증가함에 따라 입자크기가 다소 증가하는 것으로 관찰되었다. O2 및 Ar 분위기 조건 하에서, Ga doping이 이루어진 다층박막의 경우에서는, 비저항은 6.4 × 10-4Ω·cm을 나타냈고, O2 분위기 조건하에서, Ga doping이 이루어진 단일 박막의 경우에서는 저항값이 감소하였고, Ga-doped ZnO 박막의 두께가 2 ㎛로 증가하면서 저항이 감소하였으며, 1.0 × 10-3 Ω·cm의 비교적 낮은 비저항 값을 나타내었다.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2013년도 춘계학술대회
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• pp.772-775
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• 2013

사파이어 위에 MOCVD로 성장한 p-GaN 위에 PECVD로 $SiO_2$ $2500{\AA}$을 증착하여 열처리실험을 진행하였다. 열처리 후 $SiO_2$ 보호막을 식각하여, 정공 농도를 측정하고, 이를 열처리 전의 데이터 값과 비교, 분석하였다. 또한, 분위기가스인 $N_2$와 $O_2$의 비율, 급속 열처리 온도 ($650^{\circ}C$와 $750^{\circ}C$) 및 시간(1분~15분)에 따른 정공의 이동도와 농도의 변화를 측정하였으며, 상온 및 저온 PL 측정을 통하여 후열처리에 따른 시료의 광학적, 구조적 성질을 조사하였다.

• Journal of the Korean Association of Oral and Maxillofacial Surgeons
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• 제47권5호
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• pp.365-372
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• 2021

Objectives: Mandibular fractures vary significantly with respect to epidemiological and demographic parameters among populations. To date, no study has evaluated these aspects of mandibular fractures in Nuh, Mewat, Haryana, India. To retrospectively analyze the incidence, age and sex distributions, etiology, anatomic distribution, occlusal status, treatment modality provided, and their correlation in patients who suffered isolated mandibular fractures. Materials and Methods: The records of maxillofacial injury patients who reported to the Department of Dentistry, SHKM Government Medical College from January 2013 to December 2019, were retrieved from our database, and necessary information was collected. The data collected were analyzed statistically using IBM SPSS ver. 21. Results: Totals of 146 patients and 211 fractures were analyzed. There were 127 males and 19 females with an age range of 3-70 years (mean age, 26 years). Road traffic accident (RTA) was the most common cause of fracture (64.4%), followed by fall (19.9%), assault (15.1%), and sports injury (0.7%). Of all patients, 42.5% had bilateral fractures, 31.5% had left side fracture, 21.2% had right side fracture, 3.4% sustained midline symphyseal fracture, and 1.4% had symphyseal fracture along one side of the mandible. Site distribution was as follows: parasymphysis (34.6%), angle (23.7%), condyle (20.4%), body (12.8%), symphysis (4.3%), ramus 2.4%, and dentoalveolar 1.9%. The most common facture combination was angle with parasymphysis (17.8%). Occlusion was disrupted in 69.2% patients. Closed reduction was the predominant treatment modality. Conclusion: The data obtained from retrospective analyses of maxillofacial trauma increase the understanding of variables and their outcomes among populations. The results of the present study are comparable to those of the literature in some aspects and different in others.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.622-622
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• 2013

Piezoelectric energy harvesting (PEH) device refers to a power device for acquiring mechanical energy from the environment surrounding us which would otherwise be wasted and for converting it into usable electrical energy. While much work has been done on developing ZnO nanogenerator (NG) with nanowire arrays, there are some issues of not only scaling up its output power but also optimizing structure for operating feasibly in various conditions. Efficiency of NG is highly dependent on fixed orientation. But in many cases, it is not easy to predict where the pressure and vibration may come from. Furthermore, the direction of the applied mechanical stress is usually non-stationary and can be random in various practical applications. Therefore an omnidirectional PEH is needed.In this work, we investigate an omnidirectional PEH device consisting ZnO nanowires. We deposited spiral patterned ZnO seed layer on Kapton film. We deposited thin Cr layer on the ZnO seed layer using DC-sputter to form a passivation layer to retard un-expected growth of ZnO nanowires. We grew ZnO nanowires along the spiral arms using hydrothermal method. ZnO nanowires have been selectively grown from the ZnO sidewall without Cr layer and have the average length of$5{\mu}m$ and the average diameter of 40nm. We reduced the defect in the as-grown ZnO nanowires by O2 plasma using asher and by thermal treatment using RTA. Consequently, each nanowire has different directions to each other. This isotropic design can lead to the omnidirectional power generation. The morphology of NG is characterized with FESEM. Maximum output power of the device is measured by using a picoammeter and a nanovoltmeter.

• 한국전기전자재료학회논문지
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• 제25권7호
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• pp.543-551
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• 2012

In this study, transparent conducting Al-doped Zinc Oxide (AZO) films with a thickness of 150 nm were prepared on corning glass substrate by the RF magnetron sputtering with using a Al-doped zinc oxide (AZO), ($Al_2O_3$: 2 wt%) target at room temperature. This study investigated the effect of rapid thermal annealing temperature and oxygen ambient on structural, electrical and optical properties of Al-doped zinc oxide (AZO) thin films. The films were annealed at temperatures ranging from 400 to $700^{\circ}C$ by using Rapid thermal equipment in oxygen ambient. The effect of RTA treatment on the structural properties were studied by x-ray diffraction and atomic force microscopy. It is observed that the Al-doped zinc oxide (AZO) thin film annealed at $500^{\circ}C$ at 5 minute oxygen ambient gas reveals the strongest XRD emission intensity and narrowest full width at half maximum among the temperature studied. The enhanced UV emission from the film annealed at $500^{\circ}C$ at 5 minute oxygen ambient gas is attributed to the improved crystalline quality of Al-doped zinc oxide (AZO) thin film due to the effective relaxation of residual compressive stress and achieving maximum grain size.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.105-106
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• 2008

Structural, optical and electrical properties of CdS films deposited by chemical bath deposition (CBD), which are a very attractive method for low-cost and large-area solar cells, are presented. Cadmium sulfide (CdS) is II-VI semiconductor with a wide band gap of approximately 2.42 eV. CdS films have a great application potential such as solar cell, optical detector and optoelectronics device. In this paper, effects of Rapid Thermal Process (RTP) on the properties of CdS films were investigated. The CdS films were prepared on a glass by chemical bath deposition (CBD) and subsequently annealed at standard temperature $(400^{\circ}C)$ and treatment time (10 min) in various atmospheres (air, vacuum and $N_2$). The CdS films treated RTP in $N_2$ for to min were showed larger grain size and higher carrier density than the other samples.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권5호
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• pp.237-241
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• 2004

Amorphous silicon (a-Si) films are used in a broad range of solar cell, flat panel display, and sensor. Because of the greater ease of deposition and lower processing temperature, thin films are widely used for thin film transistors (TFTs). However, they have lower stability under the exposure of visible light and because of their low field effect mobility ($\mu$$_{FE}$ ) , less than 1 c $m^2$/Vs, they require a driving IC in the external circuits. On the other hand, polycrystalline silicon (poly-Si) thin films have superiority in $\mu$$_{FE}$ and optical stability in comparison to a-Si film. Many researches have been done to obtain high performance poly-Si because conventional methods such as excimer laser annealing, solid phase crystallization and metal induced crystallization have several difficulties to crystallize. In this paper, a new crystallization process using a molybdenum substrate has been proposed. As we use a flexible substrate, high temperature treatment and roll-to-roll process are possible. We have used a high temperature process above 75$0^{\circ}C$ to obtain poly-Si films on molybdenum substrates by a rapid thermal annealing (RTA) of the amorphous silicon (a-Si) layers. The properties of high temperature crystallized poly-Si studied, and poly-Si has been used for the fabrication of TFT. By this method, we are able to achieve high crystal volume fraction as well as high field effect mobility.

• 한국재료학회지
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• 제2권5호
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• pp.375-382
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• 1992

Composite target(MoS$i_{2.3}$)으로 부터 Mo-silicide를 형성시, 단결정 실리콘 위에 P, B$F_2$불순물(5${\times}10^{15}ions/cm^2$)과 다결정 실리콘 위에 P 불순물(5${\times}10^{15}ions/cm^2$)을 이온 주입하여 아르곤 분위기에서 급속열처리(RTA)하였다. 열처리는 600-120$0^{\circ}C$ 온도구간에서 20초간 행하였다. Mo-silicide의 특성 및 불순물의 거동은 4-point probe, X선 회절분석, SEM, SIMS, $\alpha$-step을 통해 조사하였다. 80$0^{\circ}C$에서 부터 MoS$i_2가 형성되며 열처리 온도가 증가할수록 낮은 비저항간을 갖는 안정한 MoS$i_2로 결정화가 이루어진다. 또한 열처리 동안 단결정 실리콘과 다결정 실리콘에서 Mo-silicide층으로 불순물의 내부 확산은 거의 발생하지 않았다.