• Title/Summary/Keyword: RS:X

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Spectrofluorometric Characteristics of the N-Terminal Domain of Riboflavin Synthase (아미노-말단 리보플라빈 생성효소 단백질의 형광 특성)

  • Kim, Ryu-Ryun;Yi, Jeong-Hwan;Nam, Ki-Seok;Ko, Kyung-Won;Lee, Chan-Yong
    • Korean Journal of Microbiology
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    • v.47 no.1
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    • pp.14-21
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    • 2011
  • Riboflavin synthase catalyzes the formation of one molecule of each riboflavin and 5-amino-6-ribitylamino-2,4-pyrimidinedione by the transfer of a 4-carbon moiety between two molecules of the substrates, 6,7-dimetyl-8-ribityllumazine. The most remarkable feature is the sequence similarity between the N-terminal half (1-97) and the C-terminal half domain (99-213). To investigate the structure and fluorescent characteristics of the N-terminal half of riboflavin synthase (N-RS) in Escherichia coli, more than 10 mutant genes coding for the mutated N-terminal domain of riboflavin synthase were generated by polymerase chain reaction. The genes coding for the proteins were inserted into pQE vector designed for easy purification of protein by 6X-His tagging system, expressed, and the proteins were purified. Almost all mutated N-terminal domain of riboflavin synthases bind to 6,7-dimethyl-8-ribityllumazine and riboflavin as fluorescent ligands. However, N-RS C47D and N-RS ET66,67DQ mutant proteins show colorless, indicating that fluorescent ligands were dissociated during purification. In addition, most mutated proteins show low fluorescent intensity comparing to N-RS wild type, whereas N-RS C48S posses stronger fluorescent intensity than that of wild type protein. Based on this result, N-RS C48S can be used as the tool for high throughput screening system for searching for the compound with inhibitory effect for the riboflavin synthase.

RFID Library Management System base on Embedded System (임베디드 기반의 RFID 도서관리 시스템)

  • Jung, Won-Soo;Park, Yong-Min;Oh, Young-Hwan
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.44 no.4
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    • pp.72-79
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    • 2007
  • This paper is an embedded system using the X-Hyper Intel PXA255 ARM CPU that base of the Linux operation system. This system applies tag information reading through RFID leader to Library executive system and designed and embody RFID middleware. The RFID middleware is consisted of RFID module, ARM processor and RS-232 interface. The RFID module is used to be inputted user and books information and RS-232 interface pass information by RFID middleware. Also, This system is embodied by specific Library management system using embedded exclusive use ARM processor. In this paper introduces concept and action principle of RFID middleware and uses Qt/Embedded and embodied manless loaning and return system.

Enzyme-Resistant Starch Formation from Mild Acid-Treated Maize Starches (약산처리 옥수수전분으로 호소저항전분의 생성)

  • Lee, Shin-Kyung;Mun, Sae-Hun;Shin, Mal-Shick
    • Korean Journal of Food Science and Technology
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    • v.29 no.6
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    • pp.1309-1315
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    • 1997
  • Yields of enzyme-resistant starch (RS) from three kinds of maize starches (Amioca, normal starch and Amylomaize VII) which were treated with 1 N HCl for 24 hr and physicochemical characteristics were investigated. Hydrolysis rate of maize starches decreased with increasing amylose content. Maximum wavelength $({\lambda}_{max})$ and iodine affinity were decreased by the acid treatment. The yields of RS increased with acid treatment up to 12 hr and then decreased. The yield of for 12 hr acid-treated Amioca increased 8 times more than untreated sample, but those of normal starch and Amylomaize VII slightly increased. Using SEM, acid-treated and autoclaved maize starches showed gel like structure, but RS had round and rod shape small particles. X-ray diffraction patterns of autoclaved starches showed amorphous structure in Amioca and B-type in normal starch and Amylomaize VII, and those of RS showed all completely crystalline structure.

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Characteristics of Contact resistivity on RTP annealing temperature and time after Plasma ion implant (플라즈마 이온주입 후 RTP 열처리 온도와 시간에 따른 접촉저항 특성)

  • Choi, Jang-Hun;Do, Seung-Woo;Lee, Yong-Hyun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.5-6
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    • 2009
  • In this paper, plasma ion implant is performed with $PH_3$ gas diluted by helium gas on P-type Si wafer (100). Spike Rapid Thermal Processing(RTP) annealing performed for 30~60 sec from $800\;^{\circ}C$ to $1000\;^{\circ}C$ in $N_2+O_2$ ambient. Crystalline defect is analyzed by Transmission Electron Microscope(TEM) and Double crystal X-ray Diffraction(DXRD). Contact resistivity($\rho c$), contact resistance(Rc) and sheet resistance(Rs) are analyzed by measuring Transfer Length Method(TLM) using 4155C analysis. As annealing temperature increase, Rs decrease and ${\rho}c$ and Rc increase at temperature higher than $850\;^{\circ}C$. We achieve low Rs, ${\rho}c$ and Rc with Plasma ion implant and spike RTP.

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Semi-insulation Behavior of GaN Layer Grown on AlN Nucleation Layer

  • Lee, Min-Su;Kim, Hyo-Jeong;Lee, Hyeon-Hwi
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.132-132
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    • 2011
  • The sheet resistance (Rs) of undoped GaN films on AlN/c-plane sapphire substrate was investigated in which the AlN films were grown by R. F. magetron sputtering method. The Rs was strongly dependent on the AlN layer thickness and semi-insulating behavior was observed. To clarify the effect of crystalline property on Rs, the crystal structure of the GaN films has been studied using x-ray scattering and transmission electron microscopy. A compressive strain was introduced by the presence of AlN nucleation layer (NL) and was gradually relaxed as increasing AlN NL thickness. This relaxation produced more threading dislocations (TD) of edge-type. Moreover, the surface morphology of the GaN film was changed at thicker AlN layer condition, which was originated by the crossover from planar to island grains of AlN. Thus, rough surface might produce more dislocations. The edge and mixed dislocations propagating from the interface between the GaN film and the AlN buffer layer affected the electric resistance of GaN film.

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Improvement of Efficiency of Cu(Inx,Ga1-x)Se2 Thin Film Solar Cell by Enhanced Transparent Conductive Oxide Films (투명 전도막 개선을 통한 Cu(Inx,Ga1-x)Se2 박막태양전지 효율 향상에 관한 연구)

  • Kim, Kilim;Son, Kyeongtae;Kim, Minyoung;Shin, Junchul;Jo, Sunghee;Lim, Donggun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.27 no.4
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    • pp.203-208
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    • 2014
  • In this study, Sputtering method was used to grow Al-dopes ZnO films on a CIGS absorber layer, in order to examine the effect of TCO on properties of CIGS solar cell devices. Structural, electrical and optical properties were investigated by varied thickness of Al-dopes ZnO films. Also, relation to the application as a window layer in CIGS thin film solar cell were studied. It was found that the electrical and structural properties of ZnO:Al film improved with increasing its thickness. However, the optical properties degraded. Jsc of the fabricated CIGS based solar cells was significantly influenced by the variation of the ZnO:Al window layer thickness. Because ZnO:Al window layer is one of the Rs factors in CIGS solar cell. Rs has the biggest influence on efficiency characteristic. In order to obtain high efficiency of CIGS solar cell, ZnO:Al window layer should be fabricated with electrically and optically optimized.

Development of PC based High Voltage Generator for Dental CT (PC기반 치과 CT용 고전압 펄스 발생장치 개발)

  • Kim, Hack-Seong;Oh, Jun-Yong;Song, Sang-Hoon;Won, Choong-Yeon
    • Proceedings of the KIPE Conference
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    • 2008.06a
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    • pp.580-582
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    • 2008
  • The object of this paper is develope the PC based controlled high voltage power supply and studies 1.2kW(120kV, 10mA) pulse power X-ray generator possible to adapt fluoroscopy of Dental CT X-ray generator and industrial X-ray pulse power equipment. The developed pulse power X-ray generator consisted of mono-block tank include X-ray tube and high voltage X-ray power supply circuit and high voltage control unit with RS232C/422 communication port. The PC control program of pulse power X-ray generator uses LabVIEW, and the size of high voltage transformer and high voltage generator is minimized by high voltage high frequency inverter has 100kHz switching frequency. Also this paper shows result of X-ray tube voltage and tube current correspond to variable load.

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Association of XRCC1 Gene Polymorphisms with Breast Cancer Susceptibility in Saudi Patients

  • Al Mutairi, Fatima Masoud;Alanazi, Mohammed;Shalaby, Manal;Alabdulkarim, Huda A.;Pathan, Akbar Ali Khan;Parine, Narasimha Reddy
    • Asian Pacific Journal of Cancer Prevention
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    • v.14 no.6
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    • pp.3809-3813
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    • 2013
  • Background: X-ray repair cross-complementing group 1 (XRCC1) plays a key role in the base excision repair pathway, as a scaffold protein that brings together proteins of the DNA repair complex. XRCC1 is reported to be a candidate influence on cancer risk. The aim of our present study was to assess the association of rs1799782 (Arg194Trp) and rs25487 (Arg399Gln) XRCC1 gene polymorphisms with breast cancer in the Saudi population. Materials and Methods: The two SNP's were analyzed in breast cancer patients and healthy control subjects. Genotypes were determined by TaqMan SNP genotype analysis technique and data were analyzed using Chi-square or t test and logistic regression analysis by SPSS16.0 software. Results and Conclusions: Results showed that rs1799782 significantly increased susceptibility to breast cancer with Arg/Trp, Arg/Trp+Trp/Trp genotypes and at Trp allele overall study. It also increased risk of breast cancer in older age patients (above 48) and with the ER positive category. XRCC1rs25487 (Arg399Gln) did not showed any significant association. In conclusion the XRCC1rs1799782 polymorphism may be involved in the etiology of breast cancer in the Saudi population. Confirmation of our findings in larger populations of different ethnicities is warranted.

Characteristics of Sputtered Ta films by Statistical Method (통계적 실험 방법에 의한 Ta 박막의 증착 특성 연구)

  • Seo, Yu-Seok;Park, Dae-Gyu;Jeong, Cheol-Mo;Kim, Sang-Beom;Son, Pyeong-Geun;Lee, Seung-Jin;Kim, Han-Min;Yang, Hong-Seon;Park, Jin-Won
    • Korean Journal of Materials Research
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    • v.11 no.6
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    • pp.492-497
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    • 2001
  • We report the characteristics and the dependence of sputter-deposited Ta films on the process parameters. The properties of as-deposited Ta films such as deposition rate, resistivity, Rs uniformity, reflectivity, and stress were investigated and analyzed as a function of process parameter using a statistical experimental method. The functional relationships between the independent and dependent variables were predicted by surface response. The optimal deposition condition of DC magnetron sputtered Ta films was obtained at the chamber pressure of 2 mTorr, power density of 8 W/$\textrm{cm}^2$, and substrate temperature of 2$0^{\circ}C$ by means of resistivity and Rs uniformity. The fitness value for quadratic model as evaluated by the R- square was 0.85~ 0.9 without pooling. The as-deposited Ta films exhibited the resistivity of ~180$\mu$$\Omega$cm with Rs uniformity of ~2%. The transmission electron microscopy and x-ray diffractometry identified that the phase of as-deposited film was $\beta$-Ta having the grain size of 100~200.

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