• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.4
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• pp.257-265
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• 2009

Recent progress in development of CMOS power amplifiers for mobile terminals is reviewed, focusing first on switching mode power amplifiers, which are used for transmitters with constant envelope modulation and polar transmitters. Then, various transmission line transformers are evaluated. Finally, linear power amplifiers, and linearization techniques, are discussed. Although CMOS devices are less linear than other devices, additional functions can be easily integrated with CMOS power amplifiersin the same IC. Therefore, CMOS power amplifiers are expected to have potential applications after various linearity and efficiency enhancement techniques are used.

• Proceedings of the IEEK Conference
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• 2000.09a
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• pp.911-914
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• 2000

본 논문에서는 배터리가 없는 ASK 전송방식의 RFID(Radio Frequency IDentification) Transponder 칩 설계에 관한 내용을 다룬다. Transponder IC는 power-generation 회로, clock-generation 회로, digital block, modulator, overoltge protection 회로로 구성된다. 설계된 칩은 저전력 회로를 적용하여 원거리 transponder칩을 구현할 수 있도록 하였다. 설계된 회로는 0.25㎛ 표준 CMOS 공정으로 레이아웃하여 제작하였다.

• ETRI Journal
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• v.36 no.3
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• pp.352-360
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• 2014

This paper presents a 900 MHz zero-IF RF transceiver for IEEE 802.15.4g Smart Utility Networks OFDM systems. The proposed RF transceiver comprises an RF front end, a Tx baseband analog circuit, an Rx baseband analog circuit, and a ${\Delta}{\Sigma}$ fractional-N frequency synthesizer. In the RF front end, re-use of a matching network reduces the chip size of the RF transceiver. Since a T/Rx switch is implemented only at the input of the low noise amplifier, the driver amplifier can deliver its output power to an antenna without any signal loss; thus, leading to a low dc power consumption. The proposed current-driven passive mixer in Rx and voltage-mode passive mixer in Tx can mitigate the IQ crosstalk problem, while maintaining 50% duty-cycle in local oscillator clocks. The overall Rx-baseband circuits can provide a voltage gain of 70 dB with a 1 dB gain control step. The proposed RF transceiver is implemented in a $0.18{\mu}$ CMOS technology and consumes 37 mA in Tx mode and 38 mA in Rx mode from a 1.8 V supply voltage. The fabricated chip shows a Tx average power of -2 dBm, a sensitivity level of -103 dBm at 100 Kbps with PER < 1%, an Rx input $P_{1dB}$ of -11 dBm, and an Rx input IP3 of -2.3 dBm.

• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.12
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• pp.242-246
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• 2012

This paper presents an integrated low noise and highly linear wideband RF front-end for a digital terrestrial and cable TV tuner, which are used as a part of double-conversion TV tuner. The low noise amplifier (LNA) has a low noise figure and high linearity by adopting a noise canceling technique based on current amplification. The up-conversion mixer and SAW buffer have high linearity by employing a third order intermodulation cancellation technique. The proposed RF front-end is designed in a $0.18{\mu}m$ CMOS and draws 60 mA from a 1.8 V supply voltage. The RF front-end shows a voltage gain of 30 dB, an average single side-band noise figure of 4.2 dB, an IIP2 of 40 dBm, and an IIP3 of -4.5 dBm for the entire band from 48 MHz to 862Hz.

• ETRI Journal
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• v.26 no.3
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• pp.229-240
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• 2004

This paper reports on our development of a dual-mode transceiver for a CMOS high-rate Bluetooth system-onchip solution. The transceiver includes most of the radio building blocks such as an active complex filter, a Gaussian frequency shift keying (GFSK) demodulator, a variable gain amplifier (VGA), a dc offset cancellation circuit, a quadrature local oscillator (LO) generator, and an RF front-end. It is designed for both the normal-rate Bluetooth with an instantaneous bit rate of 1 Mb/s and the high-rate Bluetooth of up to 12 Mb/s. The receiver employs a dualconversion combined with a baseband dual-path architecture for resolving many problems such as flicker noise, dc offset, and power consumption of the dual-mode system. The transceiver requires none of the external image-rejection and intermediate frequency (IF) channel filters by using an LO of 1.6 GHz and the fifth order onchip filters. The chip is fabricated on a $6.5-mm^{2}$ die using a standard $0.25-{\mu}m$ CMOS technology. Experimental results show an in-band image-rejection ratio of 40 dB, an IIP3 of -5 dBm, and a sensitivity of -77 dBm for the Bluetooth mode when the losses from the external components are compensated. It consumes 42 mA in receive ${\pi}/4-diffrential$ quadrature phase-shift keying $({\pi}/4-DQPSK)$ mode of 8 Mb/s, 35 mA in receive GFSK mode of 1 Mb/s, and 32 mA in transmit mode from a 2.5-V supply. These results indicate that the architecture and circuits are adaptable to the implementation of a low-cost, multi-mode, high-speed wireless personal area network.

• Transactions on Electrical and Electronic Materials
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• v.17 no.5
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• pp.261-269
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• 2016

A high-performance transmit/receive (T/R) switch is essential for every radio-frequency (RF) device. This paper proposes a T/R switch that is designed in the CEDEC 0.13 μm complementary metal-oxide-semiconductor (CMOS) technology for 2.4 GHz ISM-band RF applications. The switch exhibits a 1 dB insertion loss, a 28.6 dB isolation, and a 35.8 dBm power-handling capacity in the transmit mode; meanwhile, for the 1.8 V/0 V control voltages, a 1.1 dB insertion loss and a 19.4 dB isolation were exhibited with an extremely-low power dissipation of 377.14 μW in the receive mode. Besides, the variations of the insertion loss and the isolation of the switch for a temperature change from - 25℃ to 125℃ are 0.019 dB and 0.095 dB, respectively. To obtain a lucrative performance, an active inductor-based resonant circuit, body floating, a transistor W/L optimization, and an isolated CMOS structure were adopted for the switch design. Further, due to the avoidance of bulky inductors and capacitors, a very small chip size of 0.0207 mm² that is the lowest-ever reported chip area for this frequency band was achieved.

• Journal of IKEEE
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• v.11 no.1 s.20
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• pp.15-23
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• 2007

This paper describes a dual frequency synthesizer designed in a 0.2$\mu$m CMOS technology for wireless LAN applications. The design is focused mainly on low-power characteristics. Power dissipation is minimized especially in VCO and prescaler design. The designed synthesizer includes all building blocks for elimination of external components, other than the crystal. Its operating frequency can be programmed by external data. It operates in the frequency range of 2.3GHz to 2.7GHz (RF) and 250MHz to 800MHz (IF) and consumes 5.14mA at 2.5GHz and 1.08mA at 0.5GHz from a 2.5V supply. The measured phase noise is -85dBc/Hz in-band and -105dBc/Hz at 1MHz offset at IF band. The die area is 1.7mm$\times$1.7mm.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.12
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• pp.27-34
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• 2004

The study on the RF substrate circuit is necessary to model RF output characteristics of deep submicron MOSFETs below 0.2$\mum$ gate length that have bun commercialized by the recent development of Si submicron process. In this paper, direct extraction methods are developed to apply for a simple substrate resistance model as well as another substrate model with connecting resistance and capacitance in parallel. Using these extraction methods, better agreement with measured Y22-parameter up to 30 GHz is achieved for 0.15$\mum$ CMOS device by using the parallel RC substrate model rather than the simple resistance one, demonstrating the RF accuracy of the parallel model and extraction technique. Using this model, bias and gate length dependent curves of substrate parameters in the RF region are obtained by increasing drain voltage of 0 to 1.2V at deep submicron devices with various gate lengths of 0.11 to 0.5㎛ These new extraction data will greatly contribute to developing a scalable RF nonlinear substrate model.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.2
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• pp.312-317
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• 2015

In this paper, the RF characteristics of multi-finger MOSFETs were improved by decreasing the parasitic capacitance in spite of increased gate resistance in a 90-nm CMOS technology. Two types of device structures were designed to compare the parasitic capacitance in the gate-to-source ($C_{gs}$) and gate-to-drain ($C_{gd}$) configurations. The radio frequency (RF) performance of multi-finger MOSFETs, such as cut-off frequency ($f_T$) and maximum-oscillation frequency ($f_{max}$) improved by approximately 10% by reducing the parasitic capacitance about 8.2% while maintaining the DC performance.

• Journal of the Institute of Convergence Signal Processing
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• v.3 no.1
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• pp.27-32
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• 2002

In this study, we fabricated the advanced telemetry system that transmitting media use radio frequency(RF) for the middle range measurement of the physiological signals and receiving media use optical for electromagnetic interference problem. The telemetry system within a size of 65$\times$125$\times$45mm consists of three parts: RF transmitter, optical receiver and physiological signal processing CMOS one chip. Advantages of proposed telemetry system is wireless middle range(50m) FM transmission, reduce electromagnetic interference to a minimum which enables a comfortable bed-side telemetry system. The monitoring system was designed in the structure of dual-processor for the real time processing. The use of the one channel in our study made it possible the real time wavelet transformation of electrocardiogram data of 360Hz, 16 bits for every 1.42 seconds.