JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
권호 표지
DOI QR코드

DOI QR Code

RF CMOS Power Amplifiers for Mobile Terminals

  • Son, Ki-Yong (Department of Electrical Engineering, Korea Advanced Institute of Science and Technology) ;
  • Koo, Bon-Hoon (Department of Electrical Engineering, Korea Advanced Institute of Science and Technology) ;
  • Lee, Yu-Mi (Department of Electrical Engineering, Korea Advanced Institute of Science and Technology) ;
  • Lee, Hong-Tak (Department of Electrical Engineering, Korea Advanced Institute of Science and Technology) ;
  • Hong, Song-Cheol (Department of Electrical Engineering, Korea Advanced Institute of Science and Technology)
  • Received : 2009.08.05
  • Published : 2009.12.30
Download PDF
⟨ Previous Next ⟩

Abstract

Recent progress in development of CMOS power amplifiers for mobile terminals is reviewed, focusing first on switching mode power amplifiers, which are used for transmitters with constant envelope modulation and polar transmitters. Then, various transmission line transformers are evaluated. Finally, linear power amplifiers, and linearization techniques, are discussed. Although CMOS devices are less linear than other devices, additional functions can be easily integrated with CMOS power amplifiersin the same IC. Therefore, CMOS power amplifiers are expected to have potential applications after various linearity and efficiency enhancement techniques are used.

Keywords

References

  1. I. Aoki, S. D. Kee, D. B. Rutledge, and A. Hajimiri, "Fully integrated CMOS power amplifier design using the distributed active-transformer architecture," IEEE J. Solid-State Circuits, vol. 37, no. 3, pp. 371-383, Mar. 2002 https://doi.org/10.1109/4.987090
  2. P. Haldi, D. Chowdhury, P. Reynaert, G. Liu, and A. M. Niknejad, "A 5.8 GHz 1 V linear power amplifier using a novel on-chip transformer power combiner in standard 90 nm CMOS," IEEE J. Solid-State Circuits, vol. 43, no. 5, pp. 1054-1063, May 2008 https://doi.org/10.1109/JSSC.2008.920347
  3. C. Park, D. H. Lee, J. Han, and S. Hong, "Tournament-shaped magnetically coupled powercombiner architecture for RF CMOS power amplifier," IEEE Trans. Microw. Theory Tech., vol. 55, no. 10, pp. 2034-2042, Oct. 2007 https://doi.org/10.1109/TMTT.2007.905482
  4. K. H. An, O. Lee, H. Kim, D. H. Lee, J. Han, K. S. Yang, Y. Kim, J. J. Chang, W. Woo, C.-H. Lee, H. Kim, and J. Laskar, "Power-combining transformer techniques for fully-integrated CMOS power amplifiers," IEEE J. Solid-State Circuits, vol. 43, no. 5, pp. 1064-1075, May 2008 https://doi.org/10.1109/JSSC.2008.920349
  5. H. Lee, C. Park, and S. Hong, "A quasi-four-pair class-E CMOS RF power amplifier with an integrated passive device transformer," IEEE Trans. Microw. Theory Tech., vol. 57, no. 4, pp. 752-759, Apr. 2009 https://doi.org/10.1109/TMTT.2009.2015122
  6. C. Park, Y. Kim, H. Kim, and S. Hong, "A 1.9-GHz CMOS power amplifier using three-port asymmetric transmission line transformer for a polar transmitter," IEEE Trans. Microw. Theory Tech., vol. 55, no. 2, pp. 230-238, Feb. 2007 https://doi.org/10.1109/TMTT.2006.889152
  7. C. Park, J. Han, H. Kim, and S. Hong, "A 1.8-GHz CMOS power amplifier using a dual-primary transformer with improved efficiency in the low power region," IEEE Trans. Microw. Theory Tech., vol. 56, no, 4, pp. 782-792, Apr. 2008 https://doi.org/10.1109/TMTT.2008.918152
  8. D. H. Lee, C. Park, J. Han, Y. Kim, S. Hong, C.-H. Lee, and J. Laskar, "A load-shared CMOS power amplifier with efficiency boosting at low power mode for polar transmitters," IEEE Trans. Microw. Theory Tech., vol. 56, no. 7, pp. 1565-1574, July 2008 https://doi.org/10.1109/TMTT.2008.925220
  9. S.-H. Baek, C. Park, and S. Hong, "A fully integrated 5-GHz CMOS power amplifier for IEEE 802.11a WLAN applications," Journal of Semiconductor Technology and Science, vol. 7, no. 2, pp. 98-101, June 2007 https://doi.org/10.5573/JSTS.2007.7.2.098
  10. J. Kang, D. Yu, Y. Yang, and B. Kim, "Highly linear 0.18-${\mu}m$ CMOS power amplifier with deep n-well structure," IEEE J. Solid-State Circuits, vol. 41, no. 5, pp. 1073-1080, May 2006 https://doi.org/10.1109/JSSC.2006.874059
  11. C. Wang, M. Vaidyanathan, and L. E. Larson, "A capacitance-compensation technique for improved linearity in CMOS class-AB power amplifiers," IEEE J. Solid-State Circuits, vol. 39, no. 11, pp. 1927-1937, Nov. 2004 https://doi.org/10.1109/JSSC.2004.835834
  12. C. Lu, A.-V. H. Pham, M. Shaw, and C. Saint, "Linearization of CMOS broadband power amplifiers through combined multigated transistors and capacitance compensation," IEEE Trans. Microw. Theory Tech., vol. 55, no, 11, pp. 2320- 2328, Nov. 2007 https://doi.org/10.1109/TMTT.2007.907734
  13. S. Kang, B. Choi, and B. Kim, "Linearity analysis of CMOS for RF application," IEEE Trans. Microw. Theory Tech., vol. 51, no, 3, pp. 972-977, Mar. 2003 https://doi.org/10.1109/TMTT.2003.808709
  14. J. Kang, J. Yoon, K. Min, D. Yu, J. Nam, Y. Yang, and B. Kim, "A highly linear and efficient differential CMOS power amplifier with harmonic control," IEEE J. Solid-State Circuits, vol. 41, no. 6, pp. 1314-1322, June 2006 https://doi.org/10.1109/JSSC.2006.874276
  15. J. Kang, A. Hajimiri, and B. Kim, "A single-chip linear CMOS power amplifier for 2.4 GHz WLAN," in IEEE ISSCC Dig. Tech. Papers, Feb. 2006, pp. 208-209
  16. A. Shirvani, D. K. Su, and B. A. Wooley, "A CMOS RF power amplifier with parallel amplification for efficient power control," IEEE J. Solid-State Circuits, vol. 37, no. 6, pp. 684-693, June 2002 https://doi.org/10.1109/JSSC.2002.1004572
  17. P. Reynaert and M. S. J. Steyaert, 'A 2.45-GHz 0.13-${\mu}m$ CMOS PA with parallel amplification," IEEE J. Solid-State Circuits, vol. 42, no. 3, pp. 551-562, Mar. 2007 https://doi.org/10.1109/JSSC.2006.891715
  18. G. Liu, P. Haldi, T.-J. K. Liu, and A. M. Niknejad, 'Fully integrated CMOS power amplifier with efficiency enhancement at power back-off," IEEE J. Solid-State Circuits, vol. 43, no. 3, pp. 600-609, Mar. 2008 https://doi.org/10.1109/JSSC.2007.916585
  19. K. H. Ahn, D. H. Lee, O. Lee, H. Kim, J. Han, W. Kim, C.-H. Lee, H. Kim, and J. Laskar, "A 2.4 GHz fully integrated linear CMOS power amplifier with discrete power control," IEEE Microw. Wireless Compon. Lett., vol. 19, no. 7, pp. 479-481, July 2009 https://doi.org/10.1109/LMWC.2009.2022141
  20. M. Elmala, J. Paramesh, and K. Soumyanath, 'A 90-nm CMOS Doherty power amplifier with minimum AM-PM distortion,' IEEE J. Solid-State Circuits, vol. 41, no. 6, pp. 1323-1332, June 2006 https://doi.org/10.1109/JSSC.2006.874284
  21. J. Kang, D. Yu, K. Min, and B. Kim, 'A ultra-high PAE Doherty amplifier based on 0.13-${\mu}m$ CMOS process," IEEE Microw. Wireless Compon. Lett., vol. 16, no. 9, pp. 505-507, Sep. 2006 https://doi.org/10.1109/LMWC.2006.880703
  22. N. Wongkomet, L. Tee, and P. R. Gray, "A +31.5 dBm CMOS RF Doherty power amplifier for wireless communications," IEEE J. Solid-State Circuits, vol. 41, no. 12, pp. 2852-2859, Dec. 2006 https://doi.org/10.1109/JSSC.2006.884832
  23. L.-Y. Yang, H.-S. Chen, and Y.-J. E. Chen, "A 2.4 GHz fully integrated cascode-cascade CMOS Doherty power amplifier,' IEEE Microw. Wireless Compon. Lett., vol. 18, no. 3, pp. 197-199, Mar. 2008 https://doi.org/10.1109/LMWC.2008.916812

Cited by

  1. A CMOS Power Amplifier With Integrated-Passive-Device Spiral-Shaped Directional Coupler for Mobile UHF RFID Reader vol.59, pp.11, 2011, https://doi.org/10.1109/TMTT.2011.2165962