JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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Effects of Rapid Thermal Annealing Temperature on Performances of Nanoscale FinFETs

  • Sengupta, M. (Department of Electronic Science, University of Calcutta) ;
  • Chattopadhyay, S. (Department of Electronic Science, University of Calcutta) ;
  • Maiti, C.K. (Department of Electronics and ECE, Indian Institute of Technology)
  • Received : 2009.08.13
  • Published : 2009.12.30
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Abstract

In the present work three dimensional process and device simulations were employed to study the performance variations with RTA. It is observed that with the increase in RTA temperature, the arsenic dopants from the source /drain region diffuse laterally under the spacer region and simultaneously acceptors (Boron) are redistributed from the central axis region of the fin towards the Si/SiO2 interface. As a consequence both drive current and peak cut-off frequency of an n-FinFET are observed to improve with RTA temperatures. Volume inversion and hence the flow of carries through the central axis region of the fin due to reduced scattering was found behind the performance improvements with increasing RTA temperature.

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References

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