• 제목/요약/키워드: RF power absorption

검색결과 46건 처리시간 0.025초

Power Absorption Measurements during NMR Experiments

  • Felix-Gonzalez, N.;Urbano-Bojorge, A.L.;de Pablo, C. Sanchez-L;Ferro-Llanos, V.;del Pozo-Guerrero, F.;Serrano-Olmedo, J.J.
    • Journal of Magnetics
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    • 제19권2호
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    • pp.155-160
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    • 2014
  • The heating produced by the absorption of radiofrequency (RF) has been considered a secondary undesirable effect during MRI procedures. In this work, we have measured the power absorbed by distilled water, glycerol and egg-albumin during NMR and non-NMR experiments. The samples are dielectric and examples of different biological materials. The samples were irradiated using the same RF pulse sequence, whilst the magnetic field strength was the variable to be changed in the experiments. The measurements show a smooth increase of the thermal power as the magnetic field grows due to the magnetoresistive effect in the copper antenna, a coil around the probe, which is directly heating the sample. However, in the cases when the magnetic field was the adequate for the NMR to take place, some anomalies in the expected thermal powers were observed: the thermal power was higher in the cases of water and glycerol, and lower in the case of albumin. An ANOVA test demonstrated that the observed differences between the measured power and the expected power are significant.

Automatic RF Input Power Level Control Methodology for SAR Measurement Validation

  • Kim, Ki-Hwea;Choi, Dong-Geun;Gimm, Yoon-Myoung
    • Journal of electromagnetic engineering and science
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    • 제15권3호
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    • pp.181-184
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    • 2015
  • Evaluation of radiating radiofrequency fields from hand-held and body-mounted wireless communication devices to human bodies are conducted by measuring the specific absorption rate (SAR). The uncertainty of system validation and probe calibration in SAR measurement depend on the variation of RF power used for the validation and calibration. RF input power for system validation or probe calibration is controlled manually during the test process of the existing systems in the laboratories. Consequently, a long time is required to reach the stable power needed for testing that will cause less uncertainty. The standard uncertainty due to this power drift is typically 2.89%, which can be obtained by applying IEC 62209 in a normal operating condition. The principle of the Automatic Input Power Level Control System (AIPLC), which controls the equipment by a program that maintains a stable input power level, is suggested in this paper. The power drift is reduced to less than ${\pm}1.16dB$ by AIPLC, which reduces the standard uncertainty of power drift to 0.67%.

RF 전자기장 생체 영향 실험에서 통계적 방법을 통한 전자기장 노출 불확실성 분석 (The analysis of RF dosimetric uncertainties by using statistical method at in-vivo and in-vitro experiments)

  • 최성호;김남
    • 한국전자파학회:학술대회논문집
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    • 한국전자파학회 2003년도 종합학술발표회 논문집 Vol.13 No.1
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    • pp.74-78
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    • 2003
  • This paper shows the dosimetric uncertainties of electromagnetic field at in-vivo and in-vitro experiments. For more accurate consequences of these researches, we have tried to find out any correlations among output power, power density and specific absorption rate(SAR) with the results of in-vivo, in-vitro tests and SAR reports of cellular phone and PDA. In the case of in-vivo tests, the power density has close statistical correlations with SAR value and in the event of in-vitro tests, the output power has considerable statistical correlations with SAR containing duty factor. On the other hand, we found that both power density and output power don't have any close correlations with SAR. And, we obtained fitted regression form among frequency, power density and SAR containing duty factor through multiple linear regression analysis.

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원자흡수법에 의한 Gas-Jet Assisted RF 글로우방전 시스템의 특성 연구 (Fundamental Studies of Gas-jet Assisted Radio Frequency Glow Discharge Atomic Absorption Spectrometry)

  • 최성규;김효진
    • 분석과학
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    • 제8권1호
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    • pp.69-77
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    • 1995
  • 원자흡수용 gas-jet assisted RF 글로우 방전시스템을 제작하고 시료손실량과 원자흡광도에 미치는 실험변수들에 관한 연구를 수행하였다. 시료손실량과 흡광도는 방전전력, 압력 및 가스흐름에 큰 영향을 받았다. 원자흡광도와 시료손실량을 가스흐름이 600ml/min로 증가할 때 까지 계속 증가하였으며, 방전 압력은 3mbar에서 최대 흡광도를 나타내었다. 방전전력이 증가할수록 시료손실량과 흡광도는 증가하였으나 시스템의 안정도에 영향을 미치는 관계로 적당한 값의 선택이 필요하였다. 스테인리스 스틸 시료 중의 Ni과 황동시료 중의 Cr의 검량선을 작성한 결과 양호한 직선성이 얻어졌다.

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RF Power Absorption Enhancement of Magnetic Composites with Conductive Grid

  • Nam, Baek-Il;Kim, Jin-U;Kim, Ki-Hyeon
    • Journal of Magnetics
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    • 제17권2호
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    • pp.129-132
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    • 2012
  • To evaluate the electromagnetic power absorption in near field, the magnetic composites with the conductive grids were simulated using the typical permeability frequency profiles. The transmission power absorptions of the magnetic composites on microstrip line were extracted by the 3D FEM simulation program of HFSS. The magnitudes of power absorptions were greatly enhanced up to 98% and broadened the absorbing frequency band over 5 GHz by the insertion of a conductive grid in magnetic composite. The initial frequency of the power absorption can controlled by the change of the ferromagnetic resonance frequencies of the magnetic composite.

PECVD 방법으로 증착한 Si박막의 SPC 성장 (SPC Growth of Si Thin Films Preapared by PECVD)

  • 문대규;임호빈
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1992년도 춘계학술대회 논문집
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    • pp.42-45
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    • 1992
  • The poly silicon thin films were prepared by solid phase crystallization at 600$^{\circ}C$ of amorphous silicon films deposited on Corning 7059 glass and (100) silicon wafer with thermally grown SiO$_2$substrate by plasma enhanced chemical vapor deposition with varying rf power, deposition temperature, total flow rate. Crystallization time, microstructure, absorption coefficients were investigated by RAMAN, XRD analysis and UV transmittance measurement. Crystallization time of amorphous silicon films was increased with increasing rf power, decreasing deposition temperature and decreasing total flow rate.

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RF 스퍼터링으로 증착된 a-Si$_{1-x}$C$_{x}$: H 박막의 결합구조와 광학적 성질에 미치는 증착변수의 영향 (Effects of Deposition Parameters on the Bonding Structure and Optical Properties of rf Sputtered a-Si$_{1-x}$C$_{x}$: H films)

  • 한승전;권혁상;이혁모
    • 한국표면공학회지
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    • 제25권5호
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    • pp.271-281
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    • 1992
  • Amorphous hydrogenated silicon carbide(a-Si1-xCx : H) films have been prepared by the rf sputtering using a silicon target in a gas mixture of Argon and methane with varying methane gas flow rate(fCH) in the range of 1.5 to 3.5 sccm at constant Argon flow rate of 30sccm and rf power in the range of 3 to 6 W/$\textrm{cm}^2$. The effects of methane flow rate and rf power on the structure and optical properties of a-Si1-xCx : H films have been analysed by measuring both the IR absorption spectrum and the UV transmittance for the films. With increasing the methane flow rate, the optical band gap(Eg) of a-Si1-xCx : H films increases gradually from 1.6eV to the maximum value of 2.42eV at rf power of 4 W/$\textrm{cm}^2$, which is due to an increases in C/Si ratio in the films by an significant increase in the number of C-Hn bonds. As the rf power increases, the number of Si-C and Si-Hn bonds increases rapidly with simultaneous reduction in the number of C-Hn bonds, which is associated with an increase in both degree of methane decomposition and sputtering of silicon. The effects of rf power on the Eg of films are considerably influenced by the methane flow rate. At low methane flow rate, the Eg of films decreased from 2.3eV to 1.8eV with the rf power. On the other hand, at high methane flow rate, that of films increased slowly to 2.4eV.

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플렉시블 염료 감응형 솔라셀의 효율에 미치는 Indium Zinc Oxide 투명전극의 영향 (Effect of Indium Zinc Oxide Transparent Electrode on Power Conversion Efficiency of Flexible Dye-Sensitized Solar Cells)

  • 이도영;정지원
    • Korean Chemical Engineering Research
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    • 제47권1호
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    • pp.105-110
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    • 2009
  • Indium zinc oxide($In_2O_3-ZnO$, IZO) 박막이 poly(ethylene terephthalate) 플렉시블 기판위에 rf 마그네트론 스퍼터링을 이용하여 $Ar/O_2$ 혼합 가스하에서 rf power, 공정압력 및 IZO 두께를 변화하여 증착되었다. 공정압력이 증가됨에 따라서 증착속도는 약간씩 증가되었고 투과도에는 거의 변화가 없었으나 저항도는 증가되었다. rf power의 증가에 대하여는 증착속도가 크게 증가하였고 투과도는 미소한 변화를 보였으며 저항도는 최저점을 보인 후에 증가하였다. 가장 낮은 저항을 보인 1 mTorr와 90 W의 공정조건에서 IZO 박막의 두께변화를 실시하여 최적의 두께를 찾고자 하였다. $1,500{\AA}$ 두께의 IZO 박막이 가장 낮은 저항도를 나타냈고 염료의 최대흡수 파장영역 주변에서 높은 투과도를 보였다. 두께가 다른 투명전극들을 이용하여 제조된 태양전지의 에너지 변환효율을 측정한 결과, $1,500{\AA}$ 두께의 IZO 전극을 사용한 셀에서 2.88%의 최대 변환효율을 보였다.

RF Characterizations of Patterned CoNbZr Magnetic Thin Film on Transmission Line

  • Kim, Ki-Hyeon
    • Journal of Magnetics
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    • 제11권3호
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    • pp.130-134
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    • 2006
  • The microwave power absorption for the patterned CoNbZr magnetic film has been investigated by coplanar waveguide method. The power absorption peaks of the patterned CoNbZr film (50 ${\mu}m$ ${\times}$ 2 mm ${\times}$ 2 ${\mu}m$), were observed at around 5.7 GHz. The observed resonance peak was in good agreement with calculated ferromagnetic resonance frequency including magnetic shape anisotropy effects. Compared with the coplanar waveguide without a magnetic film, the characteristic impedance of patterned film was shown to be increased. This resulted from the large increment of inductance up to 33 % without any significant changes of the capacitance.

적외선 센서를 위해 흡수층으로서 rf Magnetron Sputtering에 의해 제조된 NiCr 박막의 특성 (Characteristics of NiCr Thin Films Prepared by rf Magnetron Sputtering as Absorption Layer for Infrared Sensors)

  • 허성기;최은석;윤순길
    • 한국재료학회지
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    • 제13권10호
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    • pp.640-644
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    • 2003
  • NiCr thin films were fabricated by rf magnetron sputtering for applying to both the top electrode and absorption layer on Pb(Zr, Ti)O$_3$(PZT) thin films for infrared sensors. The rms roughness and resistivity of NiCr films prepared with Ni power of 80 W and Cr power of 50 W showed the most stable oxidation resistance after annealing at $600^{\circ}C$ for 5 min in oxygen ambient. The rms roughness and resistivity of NiCr films annealed at $V^{\circ}C$ in oxygen ambient were about 2$0\AA$ and $70 \mu$Ω-cm, respectively. As-deposited Ni/PZT/Pt and NiCr (Ni 80 W, Cr 50 W)/PZT/Pt structures showed well saturated hysteresis loops. However, in case of the samples annealed at $500^{\circ}C$ in oxygen ambient, only NiCr/PZT/Pt showed saturated loops having a remanent polarization of 20$\mu$C/$\textrm{cm}^2$. Ultra-thin NiCr films showed a possibility as a top electrode for infrared sensors.