• 전자공학회논문지 IE
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• v.45 no.2
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• pp.1-5
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• 2008

In this work, RF performance degradation due to hot carrier effects in SOI MOSFET have been measured and analyzed. The LNA that designed at $V_{GS}=0.8V$, f=2.5GHz, gain is 16.51dB and noise figure is 1.195dB. After stress at SOI, the LNA's gain and noise figure change of 15.3dB and 1.44dB with before stress.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.31 no.1A
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• pp.48-57
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• 2006

TWTA is to perform the function that amplifies the input RF signal and outputs it to the antenna. This paper proposes a method that is to improve the cathode ripple or the SHF TWTA for satellite communications. Through the embodiment and experiment of 600W SHF TWTA, this method satisfies the design specifications. Also, RF performance is improved by reducing the noise of auxiliary power sources supplied to the RF part and eliminating the unexpected noise. Therefore, this method is very effective and can be used to develop the similar equipments.

• Journal of Advanced Information Technology and Convergence
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• v.10 no.1
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• pp.37-43
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• 2020

This paper presents analysis of passive metal interconnection of the LNA block in CMOS integrated circuit. The performance of circuit is affected by the geometry of RF signal path. To investigate the effect of interconnection lines, a cascode LNA is designed, and circuit simulations with full-wave electromagnetic (EM) simulations are executed for different positions of a component. As the results, the position of an external capacitor (C_ex) changes the parasitic capacitance of electric coupling; the placement of component affects the circuit performance. This analysis of interconnection line is helpful to analyze the amount of electromagnetic coupling between the lines, and useful to choose the signal path in the layout design. The target of this work is the RF LNA enabling the seamless connection of wireless data network and the following standards have to be supported in multi-band (WCDMA: 2.11~ 2.17 GHz, CDMA200 1x : 1.84~1.87 GHz, WiBro : 2.3~2.4GHz) mobile application. This work has been simulated and verified by Cadence spectre RF tool and Ansoft HFSS. And also, this work has been implemented in a 0.13um RF CMOS technology process.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.28 no.6A
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• pp.397-404
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• 2003

In this paper, we have analyzed the level of cross-modulation noise required for CDMA mobile station and proposed a guideline for optimum design. From the analysis, the level of cross-modulation noise is determined by the system's noise figure(NF) and VCO's phase noise and there is a trade-off relationships between them. In addition, we have determined the value of LNA's IIP3 and duplexer's isolation to satisfy the above level in designing the system. Therefore, this paper will give a guideline for a selection of components in designing cdma2000 mobile station.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.37 no.3A
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• pp.179-187
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• 2012

In this paper, we propose an adaptive DFE (Decision Feedback Equalizer) based on LDPC (Low Density Parity Check) code for phase noise suppression and performance improvement. The proposed equalizer in this paper is applied for wireless repeater system. So as to meet ever increasing requirements on higher wireless access data rate and better quality of service (QoS), the wireless repeater system has been studied. The echo channel and RF impairments such as phase noise produce performance degradation. In order to remove echo channel and phase noise, we suggest a novel adaptive DFE equalizer based on LDPC code. The proposed equalizer helps to compensate RF impairments and improve the performance significantly better than used independently. In addition, proposed equalizer has less iteration number of LDPC code. So, the proposed equalizer system has low complexity.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.2
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• pp.273-279
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• 2013

In this paper, a novel split ring resonator is proposed for improvement of phase noise characteristics that is weak point of oscillator using planar type microstrip line resonator, and oscillator for 5.8GHz band is designed using proposed split ring resonator. At the fundamental frequency of 5.8GHz, 7.22dBm output power and -83.5 dBc@100kHz phase noise have been measured for oscillator with split ring resonator. The phase noise characteristics of oscillator is improved about 9.7dB compared to one using the general ${\lambda}$/4 microstrip resonator. Because it is possible that varactor diode or lumped capacitor is placed on the gaps of split ring resonator, resonant frequency can be controlled by bias voltage. We can design voltage controlled oscillator using proposed split ring resonator. Thus, due to its simple fabrication process and planar type, it is expected that the technique in this paper can be widely used for low phase noise oscillators for both MIC and MMIC applications.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2001.11a
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• pp.58-62
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• 2001

본 논문에서는 IMT-2000 통신방식 중 cdma-2000 방식의 시스템을 이용하여 이동통신 단말기 RF System에 미치는 위상 잡음의 영향성을 분석하였다. cdma-2000의 표준안인 TIA/EIA에서 권고한 IS-98-C 를 기초로 하여 위상 잡음 특성의 요구 조건을 유도하였다. 현재 상용화 된 부품을 이용하여 RF 시스템을 설계하여 위상 잡음 특성을 분석하였고 시스템에 가장 큰 영향을 미치는 oscillator의 위상 잡음의 양을 변화시켜 시스템에 미치는 영향을 Constellation Diagram과 Eye Diagram으로 제시 하였다.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.3
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• pp.1-7
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• 1999

A single RF transceiver evaluation board have been developed for the purpose of application to the 900MHz band transceiver contained RF-IC chip And environment test was evaluated. The RF-IC chipset includes LNA(Low Noise Amplifier), down-conversion mixer, AGC(Automatic Gain Controller), switched capacitor filter and down sampling mixer. The RF evaluation board for the testing of chipset contained various external matching circuits, filters such as RF/IF SAW(Surface Acoustic Wave) filter and duplexer and power supply circuits. With the range of 2.7~3.3V the operated chip revealed moderate power consumption of 42mA. The chip was well operated at the receiving frequency of 925~960MHz. Measurement result is similar to general RF receiving specification of the 900MHz digital mobile phone.

• Electronics and Telecommunications Trends
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• v.37 no.5
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• pp.11-21
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• 2022

GaN (Gallium-Nitride) is a promising candidate material in various radio frequency applications due to its inherent properties including wide bandgap, high carrier concentration, and high electron mobility/saturation velocity. Notably, AlGaN/GaN heterostructure field effect transistor exhibits high operating voltage and high power-density/power at high frequency. In next-generation radar systems, GaN power transistors and monolithic microwave integrated circuits (MMICs) are significant components of transmitting and receiving modules. In this paper, we introduce technological trends for C-/X-/Ku-band GaN MMICs including power amplifiers, low noise amplifiers and switch MMICs, focusing on the status of GaN MMIC fabrication technology and GaN foundry service. Additionally, we review the research for the localization of C-/X-/Ku-band GaN MMICs using in-house GaN transistor and MMIC fabrication technology. We also discuss the results of C-/X-/Ku-band GaN MMICs developed at Defense Materials and Components Convergence Research Department in ETRI.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.10a
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• pp.818-823
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• 2003

본 논문에서는 입력 매칭(input matching) BIST(Built-In Self-Test) 회로를 이용한 RF font end의 새로운 결함 검사방법을 제안한다. BIST 회로를 가진 RF front end는 1.8GHz LNA(Low Noise Amplifier: 저 잡음 증폭기)와 이중 대칭 구조의 Gilbert 셀 믹서로 구성되어 있으며, TSMC 0.25$\mu\textrm{m}$ CMOS 기술을 이용하여 설계되었다. catastrophic 결함 및 parametric 변동을 가진 RF front end와 결함을 갖지 않은 RF front end를 판별하기 위해 RF front end의 입력 전압 특성을 조사하였다. 본 방법에서는 DUT(Device Under Test: 검사대상이 되는 소자)와 BIST 회로가 동일한 칩 상에 설계되어 있기 때문에 측정할 때 단지 디지털 전자계와 고주파 전압 발생기만이 필요하며, 측정이 간단하고 비용이 저렴하다는 장점이 있다. BIST 회로가 차지하는 면적은 RF front end가 차지하는 전체면적의 약 10%에 불과하다. 본 논문에서 제안하는 검사기술을 이용하여 시뮬레이션해 본 결과 catastrophic 결함에 대해서는 100%, parametric 변동에 대해서는 약 79%의 결함을 검출할 수 있었다.