• Title/Summary/Keyword: RF model

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Modeling of Memory Effects in Power Amplifiers Using Advanced Three-Box Model with Memory Polynomial (전력 증폭기의 메모리 효과 모델링을 위한 메모리 다항식을 이용한 향상된 Three-Box 모델)

  • Ku Hyun-Chul;Lee Kang-Yoon;Hur Jeong
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.17 no.5 s.108
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    • pp.408-415
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    • 2006
  • This paper suggests an improved system-level model of RF power amplifiers(PAs) including memory effects, and validates the suggested model by analyzing the power spectral density of the output signal with a predistortion linearizer. The original three-box(Wiener-Hammerstein) model uses input and output filters to capture RF frequency response of PAs. The adjacent spectral regrowth that occurs in three-box model can be perfectly removed by Hammerstein structure predistorter. However, the predistorter based on Hammerstein structure achieves limited performance in real PA applications due to other memory effects except RF frequency response. The spectrum of the output signal can be predicted accurately using the suggested model that changes a memoryless block in a three-box model with a memory polynomial. The proposed model accurately predicts the output spectrum density of PA with Hammerstein structure predistorter with less than 2 dB errors over ${\pm}30$ MHz adjacent channel ranges for IEEE 802.11 g WLAN signal.

Plasma control Using a Linear Quadratic Regulated RF Impedance Match Process

  • Kim, Byung-Whan;Park, Jang-Hyun;Park, Gwi-Tae
    • 제어로봇시스템학회:학술대회논문집
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    • 2001.10a
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    • pp.31.2-31
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    • 2001
  • A real-time control strategy is presented for plasma control Rather than in-situ plasma variables, this is based on realtime measurements of two electrical positions that correspond to two match motors. Using the rf match monitor system, the positions were collected. The process of impedance matching was identified with variations in process factors, including rf power, pressure, and O$_2$ flow rate. A state-space model was obtained basing on autoregressive moving average model. For this model, a linear quadratic regulator was designed and applied. Simulation results revealed that match positions could accurately be regulated to follow certain positions arbitrarily chosen.

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Development of Search and Rescue System with Dynamic Model by RF Signal Based LTE (탐색구조 시스템에서의 RF 신호 기반 동역학 모델 적용 및 개발)

  • Jeong, I.C.;Kim, D.W.;Ahn, W.G.;Lee, S.
    • Journal of Satellite, Information and Communications
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    • v.12 no.4
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    • pp.120-124
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    • 2017
  • This paper describes the product of search and rescue system with dynamic model. This spread spectrum system based new standard of COSPAS-SARSAT is results of RF signal generation and transmission. we will test performance evaluation which implement signal process adapting Dynamic model and we will adapt the CAF model using TDOA and FDOA relationship.

A Simple and Accurate Parameter Extraction Method for Substrate Modeling of RF MOSFET (간단하고 정확한 RF MOSFET의 기판효과 모델링과 파라미터 추출방법)

  • 심용석;양진모
    • Proceedings of the Korea Society of Information Technology Applications Conference
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    • 2002.11a
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    • pp.363-370
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    • 2002
  • A substrate network model characterizing substrate effect of submicron MOS transistors for RF operation and its parameter extraction with physically meaningful values are presented. The proposed substrate network model includes a single resistance and inductance originated from ring-type substrate contacts around active devices. Model parameters are extracted from S-parameter data measured from common-bulk configured MOS transistors with floating gate and use where needed with out any optimization. The proposed modeling technique has been applied to various-sized MOS transistors. Excellent agreement the measurement data and the simulation results using extracted substrate network model up to 30GHz.

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A Simple and Accurate Parameter Extraction Method for Substrate Modeling of RF MOSFET (간단하고 정확한 RF MOSFET의 기판효과 모델링과 파라미터 추출방법)

  • 심용석;양진모
    • Proceedings of the Korea Society for Industrial Systems Conference
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    • 2002.11a
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    • pp.363-370
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    • 2002
  • A substrate network model characterizing substrate effect of submicron MOS transistors for RF operation and its parameter extraction with physically meaningful values are presented. The proposed substrate network model includes a single resistance and inductance originated from ring-type substrate contacts around active devices. Model parameters are extracted from S-parameter data measured from common-bulk configured MOS transistors with floating gate and use where needed with out any optimization. The proposed modeling technique has been applied to various-sized MOS transistors. Excellent agreement the measurement data and the simulation results using extracted substrate network model up to 30㎓

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Numerical Investigation of RF Pulsing Effect on Ion Energy Distributions at RF-biased Electrodes

  • Kwon, Deuk-Chul;Song, Mi-Young;Yoon, Jung-Sik
    • Applied Science and Convergence Technology
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    • v.23 no.5
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    • pp.265-272
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    • 2014
  • The ion energy distributions (IEDs) arriving at a substrate strongly affect the etching rates in plasma etching processes. In order to determine the IEDs accurately, it is important to obtain the characteristics of radio frequency (rf) sheath at pulsed rf substrates. However, very few studies have been conducted to investigate pulsing effect on IEDs at multiple rf driven electrodes. Therefore, in this work, we extended previous one-dimensional dynamics model for pulsed-bias electrodes. We obtained the IEDs using the developed rf sheath model and observed that numerically solved IEDs are in a good agreement with the experimental results.

A Survival Prediction Model of Rats in Uncontrolled Acute Hemorrhagic Shock Using the Random Forest Classifier (랜덤 포리스트를 이용한 비제어 급성 출혈성 쇼크의 흰쥐에서의 생존 예측)

  • Choi, J.Y.;Kim, S.K.;Koo, J.M.;Kim, D.W.
    • Journal of Biomedical Engineering Research
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    • v.33 no.3
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    • pp.148-154
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    • 2012
  • Hemorrhagic shock is a primary cause of deaths resulting from injury in the world. Although many studies have tried to diagnose accurately hemorrhagic shock in the early stage, such attempts were not successful due to compensatory mechanisms of humans. The objective of this study was to construct a survival prediction model of rats in acute hemorrhagic shock using a random forest (RF) model. Heart rate (HR), mean arterial pressure (MAP), respiration rate (RR), lactate concentration (LC), and peripheral perfusion (PP) measured in rats were used as input variables for the RF model and its performance was compared with that of a logistic regression (LR) model. Before constructing the models, we performed 5-fold cross validation for RF variable selection, and forward stepwise variable selection for the LR model to examine which variables were important for the models. For the LR model, sensitivity, specificity, accuracy, and area under the receiver operating characteristic curve (ROC-AUC) were 0.83, 0.95, 0.88, and 0.96, respectively. For the RF models, sensitivity, specificity, accuracy, and AUC were 0.97, 0.95, 0.96, and 0.99, respectively. In conclusion, the RF model was superior to the LR model for survival prediction in the rat model.

Macro Modeling of MOS Transistors for RF Applications (RF 적용을 위한 MOS 트랜지스터의 매크로 모델링)

  • 최진영
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.36D no.5
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    • pp.54-61
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    • 1999
  • We suggested a macro medel for MOS transistors, which incorporates the distributed substrate resistance by using a method which utilizes external diodes on SPICE MOS model. By fitting the simulated s-parameters to the measures ones, we obtained a model set for the W=200TEX>$\mu\textrm{m}$ and L=0.8TEX>$\mu\textrm{m}$ NMOS transistor, and also analyzed the effects of distributed substrate resistance in the RF range. By comparing the physical parameters calculated from simulated s-parameters such as ac resistances and capacitances with the measured ones, we confirmed the validity of the simulation results. For the frequencies below 10GHz, it seems appropriated to use a simple macro model which utilizes the existing SPICE MOS model with junction diodes, after including one lumped resistor each for gate and substrate nodes.

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Machine-learning Approaches with Multi-temporal Remotely Sensed Data for Estimation of Forest Biomass and Forest Reference Emission Levels (시계열 위성영상과 머신러닝 기법을 이용한 산림 바이오매스 및 배출기준선 추정)

  • Yong-Kyu, Lee;Jung-Soo, Lee
    • Journal of Korean Society of Forest Science
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    • v.111 no.4
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    • pp.603-612
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    • 2022
  • The study aims were to evaluate a machine-learning, algorithm-based, forest biomass-estimation model to estimate subnational forest biomass and to comparatively analyze REDD+ forest reference emission levels. Time-series Landsat satellite imagery and ESA Biomass Climate Change Initiative information were used to build a machine-learning-based biomass estimation model. The k-nearest neighbors algorithm (kNN), which is a non-parametric learning model, and the tree-based random forest (RF) model were applied to the machine-learning algorithm, and the estimated biomasses were compared with the forest reference emission levels (FREL) data, which was provided by the Paraguayan government. The root mean square error (RMSE), which was the optimum parameter of the kNN model, was 35.9, and the RMSE of the RF model was lower at 34.41, showing that the RF model was superior. As a result of separately using the FREL, kNN, and RF methods to set the reference emission levels, the gradient was set to approximately -33,000 tons, -253,000 tons, and -92,000 tons, respectively. These results showed that the machine learning-based estimation model was more suitable than the existing methods for setting reference emission levels.

Improved BSIM3v3 Macro Model for RF MOSFETs (RF MOSFET 을 위한 개선된 BSIM3v3 Macro 모델)

  • Lee, Yong-Taek;Choi, Mun-Sung;Kim, Joung-Hyck;Lee, Seong-Hearn
    • Proceedings of the IEEK Conference
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    • 2005.11a
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    • pp.675-678
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    • 2005
  • An improved BSIM3v3 RF Macro model with RC parallel substrate circuit has been developed to simulate RF characteristics of the output admittance in MOSFET accurately. This improved model shows better agreements with measured $Y_{22}-parameter$ up to 10 GHz than conventional one with a single substrate resistance, verifying the accuracy of the improved one.

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