• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.10
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• pp.1861-1868
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• 2008

In this paper, Passive Telemerty RF Sensor System using Unscented Kalman Filter algorithm(UKF) is proposed. General Passive Telemerty RF Sensor System means that it should be "wireless", "implantable" and "batterless". Conventional Passive Telemerty RF Sensor System adopts Integrated Circuit type, but there are defects like complexity of structure and limit of large power consumption in some cases. In order to overcome these kinds of faults, Passive Telemetry RF Sensor System based on inductive coupling principle is proposed in this paper. Because passive components R, L, C have stray parameters in the range of high frequency such as about 200[KHz] used in this paper, Passive Telemetry RF Sensor System considering stray parameters has to be derived for accurate model identification. Proposed Passive Telemetry RF Sensor System is simple because it consists of R, L and C and measures the change of environment like pressure and humidity in the type of capacitive value. This system adopted UKF algorithm for estimation of this capacitive parameter included in nonlinear system like Passive Telemetry RF Sensor System. For the purpose of obtaining learning data pairs for UKF Algorithm, Phase Difference Detector and Amplitude Detector are proposed respectively which make it possible to get amplitude and phase between input and output voltage. Finally, it is verified that capacitive parameter of proposed Passive Telemetry RF Sensor System using UKF algorithm can be estimated in noisy environment efficiently.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.5
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• pp.485-489
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• 2015

An accurate large-signal BSIM4 macro model including new empirical bias-dependent equations of the drain-source capacitance and channel resistance constructed from bias-dependent data extracted from S-parameters of RF MOSFETs is developed to reduce $S_{22}$-parameter error of a conventional BSIM4 model. Its accuracy is validated by finding the much better agreement up to 40 GHz between the measured and modeled $S_{22}$-parameter than the conventional one in the wide bias range.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.11
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• pp.566-571
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• 2004

Pulse modulation technique provide additional controling method for electron temperature and density in rf and microwave processing plasma. Transient characteristics of electron density and temperature have been measured in pulse modulated rf inductively coupled argon plasma using simple probe circuit. Electron temperature relaxation is clearly identified in the after glow stage. Controllability of average electron temperature and density depends on the modulation frequency and duty ratio. Numerical calculation of time-dependent electron density and temperature have been performed based on the global model. It has been shown that simple langmuir probe measurement method used for continuous plasma is also applicable to time-dependent measurement of pulse modulated plasma.

• Journal of Electrical Engineering and Technology
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• v.7 no.4
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• pp.570-575
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• 2012

In a wireless communication RF transmitter, the output of a quadrature modulator (QM) is distorted by not only the linear imperfection features such as in/quadrature-phase (I/Q) input gain imbalance, local phase imbalance, and local gain imbalance but also the nonlinear imperfection features such as direct current (DC) offset and mixer nonlinearity related to in-band spurious signal. In this paper, we propose the unified QM model to analyze the combined effects of the linear and nonlinear imperfection features on the performance of the QM. The unified QM model consists of two identical nonlinear systems and modified I/Q inputs based on the two-port nonlinear mixer model. The unified QM model shows that the output signals can be expressed by mixer circuit parameters such as intercept point and gain as well as the imperfection features. The proposed approach is validated by not only simulation but also measurement.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.347-350
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• 2004

The substrate parameters of Si MOSFET equivalent circuit model were directly extracted from measured S-Parameters in the GHz region by using simple 2-port parameter equations. Using the above extract ion method, bias and gate length dependent curves of substrate parameters in the RF region are obtained by varying drain voltage at several short channel devices with various gate lengths. These extract ion data will greatly contribute to scalable RF nonlinear substrate modeling.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.1
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• pp.1-5
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• 2000

Co-fired resistors for high frequency MCM-C (Multi Chip Module-Cofired) were fabricated and measured their RF properties from DC to 6 GHz. LTCC (Low Temperature Co-fired Ceramics) substrates with 8 layers were used as the substrates. Resisters and electrodes were printed on the 7th layer and connected to the top layer by via holes. Deviation from DC resistance of the resistors was resulted from the resister pastes, resistor size, and via length. From the experimental results, the suitable equivalent circuit model was adopted with resistor, transmission line, capacitor, and inductor. The characteristic impedance $Z_{o}$ of the transmission line from the equivalent circuit can explain the RF behavior of the buried resistor according to the structural variation.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1434-1435
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• 2008

In this paper, we propose a method that applies Vector Fitting(VF) and Adaptive Frequency Sampling(ASF) technique to the equivalent circuit model for RF passive components. VF and ASF schemes are implemented to obtain the rational functions. S parameters of the equivalent circuit model is compared to those of EM simulation in case of the microstrip structure with coupled bandpass filter.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.79-80
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• 2005

In this paper, the circuit models of optical to electrical(O/E) characteristics of waveguide photodiode(WGPD) submodule are examined. Test structures of WGPD and WGPD submodule were fabricated and S21 parameter was measured to characterize the O/E conversion property. Valid circuit models were derived by RF circuit simulation and O/E characteristics were modeled to analyze the effects of model parameters on the WGPD submodule performances. Based on the results, it can be concluded that the suggested WGPD submodule model can explain the characteristics of the O/E conversion of WGPD submodule, where the parasitic components originated from ribbon bonding block crucially influence on the performance of WGPD submodule, are able to show more efficient property by making compact bonding structure. We propose an effective WGPD submodule bonding structure and it can ensure the 40Gbps operation of WGPD.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.10
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• pp.1910-1915
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• 2007

An accurate and simple method to extract equivalent circuit parameters of fully-depleted silicon-on-insulator MOSFETs small-signal modeling operating at RF frequencies including the non-quasi static effects is presented in this article. The advantage of this method is that a unique and physically meaningful set of intrinsic equivalent circuit parameters is extracted by de-embedding procedure of extrinsic elements such as parasitic capacitances and resistances of MOSFETs from measured S-parameters using simple Z- and Y- matrices calculations. The calculated small-signal parameters using the presented extraction method give modeled Y-parameters which are in good agreement with the measured Y-parameters from 0.5 to 20GHz.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.393-396
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• 1999

A circuit model of silicon substrate coupling for CMOS RF-IC design is developed. Its characteristics are analyzed by using a simple RC mesh model in order to investigate substrate coupling. The coupling effects due to the substrate were characterized with substrate resistivity, oxide thickness, substrate thickness. and physical distance. Thereby the silicon substrate effects are analytically investigated and verified with simulation. The analysis and simulation of the model have excellent agreements with MEDICI(2D device simulator) simulation results.